JP5000293B2 - 不揮発性半導体メモリ装置 - Google Patents
不揮発性半導体メモリ装置 Download PDFInfo
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- JP5000293B2 JP5000293B2 JP2006356457A JP2006356457A JP5000293B2 JP 5000293 B2 JP5000293 B2 JP 5000293B2 JP 2006356457 A JP2006356457 A JP 2006356457A JP 2006356457 A JP2006356457 A JP 2006356457A JP 5000293 B2 JP5000293 B2 JP 5000293B2
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- capacitor
- insulating film
- electrode
- memory device
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- 239000004065 semiconductor Substances 0.000 title claims description 64
- 239000003990 capacitor Substances 0.000 claims description 67
- 230000005641 tunneling Effects 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 15
- 238000002955 isolation Methods 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 13
- 230000003071 parasitic effect Effects 0.000 claims description 6
- 238000000034 method Methods 0.000 description 26
- 230000008569 process Effects 0.000 description 24
- 229920005591 polysilicon Polymers 0.000 description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 15
- 238000007667 floating Methods 0.000 description 10
- 230000006870 function Effects 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000005684 electric field Effects 0.000 description 6
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000004075 alteration Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000006386 memory function Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000001404 mediated effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/60—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the control gate being a doped region, e.g. single-poly memory cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Description
120 トランジスタ電極
130 第1キャパシタ電極
140 第2キャパシタ電極
150、160 金属ライン
170 選択トランジスタ電極
Claims (7)
- 半導体基板と、
前記半導体基板に形成された第1活性領域及び第2活性領域と、
前記第1活性領域及び第2活性領域とを分離する素子分離領域と、
前記第1活性領域に第1絶縁膜を媒介として該第1絶縁膜上に形成されるセンス用トランジスタのゲート電極と、
前記第1活性領域に第2絶縁膜を媒介として該第2絶縁膜上に形成される第1キャパシタのトンネリング電極と、
前記第2活性領域内に第3絶縁膜を媒介として該第3絶縁膜上に形成される第2キャパシタのコントロール電極と、
を備え、
前記第2キャパシタのコントロール電極は、前記素子分離領域とはオーバーラップせずに配置され、寄生キャパシタンスを減らし、
前記センス用トランジスタのゲート電極、前記第1キャパシタのトンネリング電極及び第2キャパシタのコントロール電極は平面上、互いに分離されており、前記第2キャパシタのコントロール電極は金属ラインによって、それぞれ前記センス用トランジスタのゲート電極及び前記第1キャパシタのトンネリング電極に電気的に接続されたことを特徴とする不揮発性半導体メモリ装置。 - 前記第1キャパシタのトンネリング電極は、前記第1活性領域上から前記素子分離領域上まで伸び、
前記第1キャパシタのトンネリング電極と前記第2キャパシタのコントロール電極とを接続する前記金属ラインは、前記素子分離領域上で前記第1キャパシタのトンネリング電極に接続されたことを特徴とする請求項1に記載の不揮発性半導体メモリ装置。 - 前記第1絶縁膜の厚さが、前記第2絶縁膜の厚さより大きいことを特徴とする請求項1に記載の不揮発性半導体メモリ装置。
- 前記第1絶縁膜と前記第3絶縁膜の厚さが、等しいことを特徴とする請求項1に記載の不揮発性半導体メモリ装置。
- 前記第1絶縁膜と前記第3絶縁膜が、同時に形成されることを特徴とする請求項1に記載の不揮発性半導体メモリ装置。
- 前記第1活性領域に第4絶縁膜を媒介として形成された選択トランジスタのゲート電極をさらに備えることを特徴とする請求項1に記載の不揮発性半導体メモリ装置。
- 前記第1キャパシタと前記半導体基板とが共有する前記第1活性領域の接合は、前記センス用トランジスタのドレインを形成し、前記センス用トランジスタのゲート電極を基準に、前記ドレインに対応する前記第1活性領域の接合は、前記センス用トランジスタのソースを形成することを特徴とする請求項1に記載の不揮発性半導体メモリ装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050134385A KR100667909B1 (ko) | 2005-12-29 | 2005-12-29 | 비휘발성 반도체 메모리 장치 |
KR10-2005-0134385 | 2005-12-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007184612A JP2007184612A (ja) | 2007-07-19 |
JP5000293B2 true JP5000293B2 (ja) | 2012-08-15 |
Family
ID=37867841
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006356457A Active JP5000293B2 (ja) | 2005-12-29 | 2006-12-28 | 不揮発性半導体メモリ装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7772638B2 (ja) |
JP (1) | JP5000293B2 (ja) |
KR (1) | KR100667909B1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20100079176A (ko) * | 2008-12-30 | 2010-07-08 | 주식회사 동부하이텍 | 이이피롬 소자 및 그 제조 방법 |
GB201111916D0 (en) * | 2011-07-12 | 2011-08-24 | Cambridge Silicon Radio Ltd | Single poly non-volatile memory cells |
EP2639816B1 (en) * | 2012-03-12 | 2019-09-18 | eMemory Technology Inc. | Method of fabricating a single-poly floating-gate memory device |
KR101586413B1 (ko) * | 2014-12-12 | 2016-01-18 | 주식회사 윙코 | 단일 폴리 비휘발성 메모리 |
CN107425003B (zh) | 2016-05-18 | 2020-07-14 | 硅存储技术公司 | 制造分裂栅非易失性闪存单元的方法 |
WO2017200709A1 (en) * | 2016-05-18 | 2017-11-23 | Silicon Storage Technology, Inc. | Method of making split gate non-volatile flash memory cell |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6057673A (ja) * | 1983-09-08 | 1985-04-03 | Nec Corp | Mos型半導体装置 |
US4807003A (en) * | 1986-12-19 | 1989-02-21 | National Semiconductor Corp. | High-reliablity single-poly eeprom cell |
IT1199828B (it) * | 1986-12-22 | 1989-01-05 | Sgs Microelettronica Spa | Cella di memoria eeprom a singolo livello di polisilicio scrivibile e cancellabile bit a bit |
US5282161A (en) * | 1990-12-31 | 1994-01-25 | Sgs-Thomson Microelectronics S.R.L. | Eeprom cell having a read interface isolated from the write/erase interface |
US5440159A (en) * | 1993-09-20 | 1995-08-08 | Atmel Corporation | Single layer polysilicon EEPROM having uniform thickness gate oxide/capacitor dielectric layer |
JP3001409B2 (ja) * | 1996-02-19 | 2000-01-24 | モトローラ株式会社 | 2層フローティングゲート構造のマルチビット対応セルを有する不揮発性メモリ及びそのプログラム/消去/読出方法 |
JP4040102B2 (ja) * | 1996-10-28 | 2008-01-30 | マクロニクス インターナショナル カンパニー リミテッド | 冗長エレメントとして単一ポリシリコンフローティングゲートトランジスタを使用するメモリ冗長回路 |
US5786614A (en) * | 1997-04-08 | 1998-07-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Separated floating gate for EEPROM application |
JPH1187664A (ja) * | 1997-04-28 | 1999-03-30 | Nippon Steel Corp | 半導体装置及びその製造方法 |
US5885871A (en) * | 1997-07-31 | 1999-03-23 | Stmicrolelectronics, Inc. | Method of making EEPROM cell structure |
JP2000031395A (ja) * | 1998-07-13 | 2000-01-28 | Nec Corp | 半導体装置とその製造方法 |
EP0977265A1 (en) * | 1998-07-30 | 2000-02-02 | STMicroelectronics S.r.l. | Circuit structure comprising a parasitic transistor having a very high threshold voltage |
US6324097B1 (en) * | 1999-08-26 | 2001-11-27 | Mosel Vitelic Inc. | Single poly non-volatile memory structure and its fabricating method |
JP4068519B2 (ja) * | 2002-07-08 | 2008-03-26 | 株式会社東芝 | 有効期限付き機能利用装置 |
JP2004165182A (ja) * | 2002-11-08 | 2004-06-10 | Ricoh Co Ltd | 半導体装置 |
KR100493061B1 (ko) * | 2003-06-20 | 2005-06-02 | 삼성전자주식회사 | 비휘발성 메모리가 내장된 단일 칩 데이터 처리 장치 |
JP2005191057A (ja) * | 2003-12-24 | 2005-07-14 | Seiko Epson Corp | 不揮発性半導体装置及びその製造方法 |
-
2005
- 2005-12-29 KR KR1020050134385A patent/KR100667909B1/ko active IP Right Grant
-
2006
- 2006-12-28 JP JP2006356457A patent/JP5000293B2/ja active Active
- 2006-12-29 US US11/647,203 patent/US7772638B2/en active Active
Also Published As
Publication number | Publication date |
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US20070152262A1 (en) | 2007-07-05 |
JP2007184612A (ja) | 2007-07-19 |
KR100667909B1 (ko) | 2007-01-11 |
US7772638B2 (en) | 2010-08-10 |
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