JP4988218B2 - 低誘電損失樹脂の製造方法 - Google Patents
低誘電損失樹脂の製造方法 Download PDFInfo
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- JP4988218B2 JP4988218B2 JP2006034935A JP2006034935A JP4988218B2 JP 4988218 B2 JP4988218 B2 JP 4988218B2 JP 2006034935 A JP2006034935 A JP 2006034935A JP 2006034935 A JP2006034935 A JP 2006034935A JP 4988218 B2 JP4988218 B2 JP 4988218B2
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- resin
- dielectric loss
- low dielectric
- dielectric constant
- insulating layer
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- 229910052788 barium Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 229960002130 benzoin Drugs 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- CHFBCXOSLARLKB-UHFFFAOYSA-N bis(4-azidophenyl)methanone Chemical compound C1=CC(N=[N+]=[N-])=CC=C1C(=O)C1=CC=C(N=[N+]=[N-])C=C1 CHFBCXOSLARLKB-UHFFFAOYSA-N 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- MPMBRWOOISTHJV-UHFFFAOYSA-N but-1-enylbenzene Chemical compound CCC=CC1=CC=CC=C1 MPMBRWOOISTHJV-UHFFFAOYSA-N 0.000 description 1
- 125000004369 butenyl group Chemical group C(=CCC)* 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011951 cationic catalyst Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000013065 commercial product Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 125000002592 cumenyl group Chemical group C1(=C(C=CC=C1)*)C(C)C 0.000 description 1
- 150000001913 cyanates Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 125000005520 diaryliodonium group Chemical group 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 239000003480 eluent Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 235000019382 gum benzoic Nutrition 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 125000000555 isopropenyl group Chemical group [H]\C([H])=C(\*)C([H])([H])[H] 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 125000002255 pentenyl group Chemical group C(=CCCC)* 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 238000012643 polycondensation polymerization Methods 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920003053 polystyrene-divinylbenzene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 238000003856 thermoforming Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 125000003944 tolyl group Chemical group 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000002463 transducing effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000006276 transfer reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- VPYJNCGUESNPMV-UHFFFAOYSA-N triallylamine Chemical compound C=CCN(CC=C)CC=C VPYJNCGUESNPMV-UHFFFAOYSA-N 0.000 description 1
- 125000005409 triarylsulfonium group Chemical group 0.000 description 1
- 239000002759 woven fabric Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/032—Organic insulating material consisting of one material
- H05K1/0326—Organic insulating material consisting of one material containing O
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G65/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
- C08G65/34—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives
- C08G65/38—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives derived from phenols
- C08G65/44—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives derived from phenols by oxidation of phenols
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
- H05K3/4626—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
Description
式(1)、式(2)及び/又は式(3)のR1〜R8は不飽和結合を持たない場合、熱可塑性樹脂である多層配線基板用低誘電損失樹脂が提供される。
攪拌子を入れた2口フラスコに塩化銅(I)0.040g(0.38mmol)、トルエン150ml、ピリジン:100ml(1.24mol)を加え、50ml/minの酸素雰囲気下500〜800rpmで攪拌した。2,6−ジメチルフェノール:5.26g(28.5mmol)、2−アリル−6−メチルフェノール:0.23g(1.5mmol)を加え、25℃、酸素雰囲気下で90分攪拌した。反応終了後、大過剰の塩酸/メタノールに沈殿させ、メタノールで数回洗浄後、トルエンに溶解させ、不溶物を濾別した。再びトルエンに溶解後、大過剰の塩酸/メタノールに再沈殿させ、メタノールで数回洗浄後、110℃/6時間真空乾燥して白色の固形物を得た(Mn=24,000,Mw/Mn=2.2)。
攪拌子を入れた2口フラスコに塩化銅(I)0.040g(0.38mmol)、トルエン150ml、ピリジン:100ml(1.24mol)を加え、50ml/minの酸素雰囲気下500〜800rpmで攪拌した。2,6−ジメチルフェノール4.98g(27.0mmol)、2−アリル−6−メチルフェノール:0.45g(3.0mmol)を加え、25℃、酸素雰囲気下で90分攪拌した。反応終了後、大過剰の塩酸/メタノールに沈殿させ、メタノールで数回洗浄後、トルエンに溶解させ、不溶物を濾別した。再びトルエンに溶解後、大過剰の塩酸/メタノールに再沈殿させ、メタノールで数回洗浄後、110℃/6時間真空乾燥して白色の固形物を得た(Mn=24,000,Mw/Mn=2.3)。
攪拌子を入れた2口フラスコに塩化銅(I)0.040g(0.38mmol)、トルエン150ml、ピリジン:100ml(1.24mol)を加え、50ml/minの酸素雰囲気下500〜800rpmで攪拌した。2,6−ジメチルフェノール4.43g(24.0mmol)、2−アリル−6−メチルフェノール:0.90g(6.0mmol)を加え、25℃、酸素雰囲気下で90分攪拌した。反応終了後、大過剰の塩酸/メタノールに沈殿させ、メタノールで数回洗浄後、トルエンに溶解させ、不溶物を濾別した。再びトルエンに溶解後、大過剰の塩酸/メタノールに再沈殿させ、メタノールで数回洗浄後、110℃/6時間真空乾燥して白色の固形物を得た(Mn=23,000,Mw/Mn=2.3)。
撹拌子を入れた2口フラスコに塩化銅(I)0.040g(0.38mmol)、トルエン150ml、ピリジン:100ml(1.24mol)を加え、50ml/minの酸素雰囲気下500〜800rpmで攪拌した。2,6−ジメチルフェノール4.98g(27.0mmol)、2,6−ビス(3−メチル−2−ブテニル)フェノール0.675g(3.0mmol)を加え、25℃、酸素雰囲気下で120分攪拌した。反応終了後、大過剰の塩酸/メタノールに沈殿させ、メタノールで数回洗浄後、トルエンに溶解させ、不溶物を濾別した。再びトルエンに溶解後、大過剰の塩酸/メタノールに再沈殿させ、メタノールで数回洗浄後、110℃/6時間真空乾燥して白色の固形物を得た(Mn=27,000,Mw/Mn=2.5)。
2,6−ジメチル−1,4−フェニレンエーテルの重合体として、アルドリッチ社製の市販品を用いた。(Mn=27,000,Mw/Mn=2.7)
(比較例2)
攪拌子を入れた2口フラスコに塩化銅(I)0.400g(3.80mmol)、トルエン150ml、ピリジン:10ml(0.124mol)を加え、50ml/minの酸素雰囲気下500〜800rpmで攪拌した。2,6−ジメチルフェノール4.98g(27.0mmol)、2−アリル−6−メチルフェノール:0.45g(3.0mmol)を加え、25℃、酸素雰囲気下で60分攪拌した。反応終了後、大過剰の塩酸/メタノールに沈殿させ、メタノールで数回洗浄後、トルエンに溶解させ、不溶物を濾別した。再びトルエンに溶解後、大過剰の塩酸/メタノールに再沈殿させ、メタノールで数回洗浄後、110℃/6時間真空乾燥して白色の固形物を得た(Mn=36,000,Mw/Mn=42.3)。
空洞共振法(アジレントテクノロジー社製8722ES型ネットワークアナライザー、関東電子応用開発製空洞共振器)によって10GHzで測定した。
熱・応力・歪測定装置(TMA/SS:SEIKO EXSTAR6000TMA/SS6100)を用い、貯蔵弾性率E’、弾性損失tanδを測定した。樹脂のtanδのピーク位置を転移温度とした。測定昇温速度は5℃/分とした。
JIS規格C6481に順じ、25x25mm角の両面銅張積層板を260℃のはんだ浴に120秒間浮かべて、取り出した試料の膨れ、はがれ、変形、反りなどを調べた。
(共重合体の合成条件検討)
攪拌子を入れた2口フラスコにトルエン150ml、塩化銅(I)、ピリジンを所定量加え、50ml/minの酸素雰囲気下500〜800rpmで攪拌した。2,6−ジメチルフェノール4.98g(27.0mmol)、2−アリル−6−メチルフェノール:0.45g(3.0mmol)を加え、25℃、酸素雰囲気下で90分攪拌した。反応終了後、大過剰の塩酸/メタノールに沈殿させ、メタノールで数回洗浄後、トルエンに溶解させ、不溶物を濾別した。再びトルエンに溶解後、大過剰の塩酸/メタノールに再沈殿させ、メタノールで数回洗浄後、110℃/6時間真空乾燥して白色の固形物を得た。
(分子量・分子量分布の測定)
ゲル浸透クロマトグラフィー(GPC,カラム:Shodex K−804L(カラム温度40℃)、ポンプ:SHIMADZU LC−10AT、UV検出器:SHIMADZU SPD−10A、溶離液:クロロホルム(流量1ml/min)、標準物質:ポリスチレン)によって行った。
従来、高周波用半導体素子は、高周波動作の障害となる配線間静電容量を低減するために、図4に記載のように空気層を絶縁層とするハーメチックシール型の気密パッケージにて製造されてきた。本発明では所定の配合比とした架橋成分,低誘電率絶縁体粒子,必要により高分子量体,難燃剤及び第二の架橋成分,離型剤,着色剤等を含有する低誘電率かつ低誘電正接な樹脂組成物を有機溶媒中あるいは無溶剤状態で混合分散し、該低誘電率,低誘電正接樹脂組成物で半導体チップを被覆し、必要により乾燥し、硬化することによって、低誘電率,低誘電正接樹脂層で絶縁,保護された半導体装置を作製する。該低誘電率,低誘電正接樹脂組成物の硬化は120℃〜240℃の加熱で行うことができる。
従来の熱硬化性樹脂組成物に比べて誘電正接が低い。従って本架橋成分を絶縁層に使用した配線基板は誘電損失が少ない高周波特性の優れた配線基板となる。以下、多層配線基板の作成方法について説明する。本発明において、多層配線基板の出発材となるプリプレグ或いは絶縁層付導体箔は、所定の配合比とした架橋成分,高分子量体,必要により低誘電率絶縁体粒子又は高誘電率絶縁体粒子,難燃剤及び第二の架橋成分,着色剤等を配合した低誘電正接樹脂組成物を溶剤中で混練してスラリー化した後にガラスクロス,不織布,導体箔等の基材に塗布,乾燥して作成する。
ヒシガード:日本化学工業製,赤燐粒子(ヒシガードTP−A10),平均粒径20μm
(低誘電率絶縁体)
Z−36:東海工業製,硼珪酸ガラスバルーン(平均粒径56μm)
(高誘電率絶縁体)
Ba−Ti系:1GHzにおける誘電率が70、密度=5.5g/cm3、平均粒子1.5μmのチタン酸バリウム系の無機フィラー
(ワニスの調製方法)
所定量の組成とした樹脂組成物をトルエンで混合,分散することによって樹脂組成物のワニスを作製した。
空洞共振法(アジレントテクノロジー製8722ES型ネットワークアナライザー、関東電子応用開発製空洞共振器)によって10GHzで測定した。
難燃性はサンプルサイズ70×3×1.5mm3の試料を用いてUL−94規格に従って評価した。
実施例6は実施例2に難燃剤として赤燐粒子を添加した樹脂組成物の例である。難燃剤を添加することによって樹脂組成物が難燃化でき、電気部品の安全性が向上する。
実施例7,8は実施例2に低誘電率絶縁体としてガラスバルーン(Z36)を添加した例である。Z36の添加量の増加に伴い誘電率は2.8から2.0に低下した。本樹脂組成物を絶縁層に用いた電気部品は誘電損失が小さく、高速伝送性が高くなる。
実施例7,8は実施例2に高誘電率絶縁体としてセラミック粒子(Ba−Ti系)を添加した例である。Ba−Ti系の含有率が増すにつれて誘電率は2.8〜12.1に増加した。本樹脂組成物を絶縁層に用いた電気部品は誘電損失が小さく、小型の高周波用電気部品となる。
実施例11は実施例2に示される低誘電損失樹脂を含み、低誘電率,低誘電正接な硬化物を形成する液状樹脂組成物である。液状の樹脂組成物は、常温且つ低圧での注型が可能である。また、本発明の樹脂組成物から作成した絶縁層を有する高周波用電子部品は低誘電率,低誘電正接であることから高速伝送,低誘電損失な高周波用電子部品となる。
Claims (2)
- 請求項1において、重合触媒の金属源として塩化銅(I)、アミン配位子としてピリジンを用いて重合を行うことを特徴とした低誘電損失樹脂の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006034935A JP4988218B2 (ja) | 2006-02-13 | 2006-02-13 | 低誘電損失樹脂の製造方法 |
US11/623,785 US20070191540A1 (en) | 2006-02-13 | 2007-01-17 | Low dielectric loss resin, resin composition, and the manufacturing method of low dielectric loss resin |
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JP2006034935A JP4988218B2 (ja) | 2006-02-13 | 2006-02-13 | 低誘電損失樹脂の製造方法 |
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JP4988218B2 true JP4988218B2 (ja) | 2012-08-01 |
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Families Citing this family (7)
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US9243164B1 (en) | 2012-02-21 | 2016-01-26 | Park Electrochemical Corporation | Thermosetting resin composition containing a polyphenylene ether and a brominated fire retardant compound |
US9051465B1 (en) | 2012-02-21 | 2015-06-09 | Park Electrochemical Corporation | Thermosetting resin composition containing a polyphenylene ether and a brominated fire retardant compound |
KR101397221B1 (ko) * | 2013-05-30 | 2014-05-20 | 삼성전기주식회사 | 열전도도 및 전기적 특성이 우수한 인쇄회로기판용 절연 수지 조성물, 절연필름, 프리프레그 및 인쇄회로기판 |
KR102516759B1 (ko) | 2016-01-05 | 2023-03-31 | 삼성전기주식회사 | 유전체 자기 조성물, 이를 포함하는 적층 세라믹 커패시터 및 적층 세라믹 커패시터의 제조 방법 |
US10526439B2 (en) * | 2017-04-10 | 2020-01-07 | John L. Lombardi | High dielectric breakdown strength resins |
JP2020143263A (ja) * | 2019-02-28 | 2020-09-10 | 太陽ホールディングス株式会社 | ポリフェニレンエーテル、硬化性組成物、ドライフィルム、プリプレグ、硬化物、積層板、および電子部品 |
US11304303B2 (en) * | 2020-04-30 | 2022-04-12 | Dujud Llc | Methods and processes for forming electrical circuitries on three-dimensional geometries |
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-
2006
- 2006-02-13 JP JP2006034935A patent/JP4988218B2/ja not_active Expired - Fee Related
-
2007
- 2007-01-17 US US11/623,785 patent/US20070191540A1/en not_active Abandoned
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JP2007211201A (ja) | 2007-08-23 |
US20070191540A1 (en) | 2007-08-16 |
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