JP4974485B2 - 半導体集積回路装置 - Google Patents
半導体集積回路装置 Download PDFInfo
- Publication number
- JP4974485B2 JP4974485B2 JP2005187575A JP2005187575A JP4974485B2 JP 4974485 B2 JP4974485 B2 JP 4974485B2 JP 2005187575 A JP2005187575 A JP 2005187575A JP 2005187575 A JP2005187575 A JP 2005187575A JP 4974485 B2 JP4974485 B2 JP 4974485B2
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- type semiconductor
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- semiconductor region
- integrated circuit
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- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
2 低濃度n型半導体領域(nウェル)
3 第1高濃度p型半導体領域(p+領域)
3s シリサイド化領域(コンタクト領域)
4 第1高濃度n型半導体領域(n+領域)
5 第2高濃度p型半導体領域(p+領域)
6 第2高濃度n型半導体領域(n+領域)
7 素子分離領域(トレンチ部)
8 層間絶縁膜
9 パッド
10(10a〜10d) 導通路(ビア)
11 シリサイドブロッキングレイヤ
Ta アノード電極
Tc カソード電極
Q1(Q1a〜Q1d) pnp型バイポーラトランジスタ
Q2 npn型バイポーラトランジスタ
Rpsub p基板抵抗
Rnwell nウェル抵抗
R1(R1a〜R1d) 配線抵抗(メタル抵抗、ビア抵抗、コンタクト抵抗)
R2(R2a〜R2d) バラスト抵抗(非シリサイド化p+抵抗)
Claims (1)
- p型半導体基板と、前記p型半導体基板に形成された低濃度n型半導体領域と、前記低濃度n型半導体領域に形成されてアノード電極に接続される第1高濃度p型半導体領域と、同じく前記低濃度n型半導体領域に形成されて前記アノード電極に接続される第1高濃度n型半導体領域と、前記p型半導体基板に形成されてカソード電極に接続される第2高濃度p型半導体領域と、同じく前記p型半導体基板に形成されて前記カソード電極に接続される第2高濃度n型半導体領域と、を有して成るシリコン制御整流素子を備えた半導体集積回路装置であって、
前記第1高濃度p型半導体領域は、前記アノード電極との導通路が複数接続されるコンタクト領域がシリサイド化処理を施されて成るとともに前記コンタクト領域を除いて非シリサイド化領域となっており、前記第1高濃度n型半導体領域、前記第2高濃度p型半導体領域、及び、前記第2高濃度n型半導体領域は、いずれも、その全面にシリサイド化処理が施されて成ることを特徴とする半導体集積回路装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005187575A JP4974485B2 (ja) | 2005-06-28 | 2005-06-28 | 半導体集積回路装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005187575A JP4974485B2 (ja) | 2005-06-28 | 2005-06-28 | 半導体集積回路装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007012648A JP2007012648A (ja) | 2007-01-18 |
JP4974485B2 true JP4974485B2 (ja) | 2012-07-11 |
Family
ID=37750804
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005187575A Expired - Fee Related JP4974485B2 (ja) | 2005-06-28 | 2005-06-28 | 半導体集積回路装置 |
Country Status (1)
Country | Link |
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JP (1) | JP4974485B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5253742B2 (ja) * | 2007-02-20 | 2013-07-31 | 新日本無線株式会社 | 縦型pnpバイポーラトランジスタ用静電破壊保護素子 |
JP5595751B2 (ja) | 2009-03-11 | 2014-09-24 | ルネサスエレクトロニクス株式会社 | Esd保護素子 |
JP5886387B2 (ja) * | 2009-03-11 | 2016-03-16 | ルネサスエレクトロニクス株式会社 | Esd保護素子 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002037566A2 (en) * | 2000-11-06 | 2002-05-10 | Sarnoff Corporation | Silicon controlled rectifier electrostatic discharge protection device with external on-chip triggering and compact internal dimensions for fast triggering |
JP4290468B2 (ja) * | 2002-05-24 | 2009-07-08 | Necエレクトロニクス株式会社 | 静電気放電保護素子 |
JP2005079287A (ja) * | 2003-08-29 | 2005-03-24 | Nec Electronics Corp | 集積回路 |
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2005
- 2005-06-28 JP JP2005187575A patent/JP4974485B2/ja not_active Expired - Fee Related
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Publication number | Publication date |
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JP2007012648A (ja) | 2007-01-18 |
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