JP4974469B2 - 基板上へトランジスタ構造を形成する方法、基板上のトランジスタ構造、および半導体デバイス - Google Patents
基板上へトランジスタ構造を形成する方法、基板上のトランジスタ構造、および半導体デバイス Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 47
- 239000000758 substrate Substances 0.000 title claims description 18
- 239000004065 semiconductor Substances 0.000 title claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 30
- 239000012535 impurity Substances 0.000 claims description 27
- 235000012239 silicon dioxide Nutrition 0.000 claims description 15
- 239000000377 silicon dioxide Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 13
- 238000010884 ion-beam technique Methods 0.000 claims description 11
- 239000002019 doping agent Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000002096 quantum dot Substances 0.000 claims description 5
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 229910000765 intermetallic Inorganic materials 0.000 claims description 2
- 239000002071 nanotube Substances 0.000 claims description 2
- 239000002070 nanowire Substances 0.000 claims description 2
- 238000010276 construction Methods 0.000 claims 1
- 238000005194 fractionation Methods 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000002513 implantation Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 229910019001 CoSi Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- -1 metal-disilicide (eg Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 102000004169 proteins and genes Human genes 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
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- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Toxicology (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
Description
トップSi層上へのゲート領域の形成、このゲート領域は、誘電体層によりトップSi層から分離されている;
分画酸化物および/またはレジスト層領域により分画された、トップSi層上の開放領域の形成;
分画層領域および埋込マスクとして機能するゲート領域を伴う開放領域をイオンビームへ露出するイオン注入による、高レベル不純物あるいは著しい損傷領域の形成、ここで、イオンビームは、ビームエネルギーと照射量との組合せを含み、それは、トップSi層内における、埋込絶縁層内のソースおよびドレイン領域の下の高不純物レベル領域、およびトップSi層内のゲート領域の下の高不純物レベルあるいは著しい損傷領域の形成を可能にする。
Claims (10)
- 基板(SOI)を用いてトランジスタ構造を形成する方法であって、
前記基板は、支持Si層(1)と、埋込絶縁層(2)と、トップSi層(3)とを含み、
前記トップSi層(3)は、トップ層厚みを有するとともに、高ドーパントレベルを有し、
前記トランジスタ構造は、ゲート領域(G1)と、ソースおよびドレイン領域(5)と、チャンネル領域とを含み、
前記方法は、
前記トップSi層(3)上に、誘電体層(GD)により前記トップSi層(3)から分離された前記ゲート領域(G1)を形成する段階と、
前記トップSi層(3)上に、分画酸化物および/またはレジスト層領域(4)により分画された開放領域(O1)を形成する段階と、
埋込マスクとして機能する前記ゲート領域(G1)および前記分画層領域(4)を伴う、前記開放領域(O1)をイオンビーム(IB)へ露出するイオン注入により、前記開放領域(O1)の下に高レベル不純物または大きく損傷された領域(5)を形成する段階とを含み、
前記イオンビーム(IB)は、ビームエネルギーと照射量との組合せを含み、前記組合せは、前記埋込絶縁層(2)内に、前記ソースおよびドレイン領域(5)の下に位置する高不純物レベル領域(L1)を形成し、かつ、前記トップSi層(3)内に、前記ゲート領域(G1)の下に位置する高不純物レベルのまたは大きく損傷された領域(L0)を形成することを可能にするようになっていて、
前記方法はさらに、
前記埋込絶縁層(2)を停止層として用いて前記支持Si層(1)を除去する第1の除去処理段階と、
前記トップSi層(3)を停止層として用いて前記埋込絶縁層(2)を除去する第2の除去処理段階と、
前記ソースおよびドレイン領域(5)を停止層として用いて、選択的エッチングにより前記高不純物レベルのまたは大きく損傷された領域(L0)を除去して、前記ソースおよびドレイン領域(5)間にギャップ(12)を作成する第3の除去処理段階と、
前記ギャップ(12)内へのチャンネル層(13)のデポジションを行ってチャンネル領域を形成する段階とを含む方法。 - 請求項1に記載のトランジスタ構造を形成する方法において、
前記ソースおよびドレイン領域(5)と前記ゲート領域(G1)とを覆う二酸化珪素キャッピング層(8)の形成段階と、
前記基板(SOI)の第2基板(10)へのウエハ接合段階とを含み、
前記第2基板(10)は二酸化珪素トップ層(11)を含み、前記キャッピング層(8)は前記二酸化珪素トップ層(11)と向かい合っている方法。 - 請求項1または2に記載のトランジスタ構造を形成する方法において、
前記第3の除去処理段階に対する追加的な停止層としての、前記誘電体領域(GD)の使用を含む方法。 - 請求項1〜3のいずれか1つに記載のトランジスタ構造を形成する方法において、
前記チャンネル層(13)が、チャンネル材料として、
Si、SiGe、GaAsまたはInPなどの半導体材料、
III−VまたはII−VI化合物、
金属、
金属間化合物、および
有機体または生体有機体化合物の材料のうちの少なくとも1つを含む方法。 - 請求項1〜4のいずれか1つに記載のトランジスタ構造を形成する方法において、
前記チャンネル層(13)が、量子ワイヤ(QW)あるいは量子ドット(QD)構造を含む方法。 - 請求項1〜5のいずれか1つに記載のトランジスタ構造を形成する方法において、
前記チャンネル層(13)が、ナノワイヤ、ナノドットのアレイ、炭素ナノドット、またはナノチューブを含む方法。 - 請求項1〜6のいずれか1つに記載のトランジスタ構造を形成する方法において、
前記イオンビーム(IB)が、Ge、I、またはBrを含む方法。 - 請求項1〜7のいずれか1つに記載のトランジスタ構造を形成する方法において、
前記トランジスタ構造がMOSFET構造である方法。 - 前記トランジスタ構造は、請求項1〜8のいずれか1つに記載の方法に従って製造されることを特徴とする、ゲート領域(Gl)、およびソースおよびドレイン領域(5)を含む、基板上のトランジスタ構造。
- 請求項9に記載のトランジスタ構造を含む半導体デバイス。
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