JP4960092B2 - 半導体部品および半導体部品の製造方法 - Google Patents

半導体部品および半導体部品の製造方法 Download PDF

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Publication number
JP4960092B2
JP4960092B2 JP2006524679A JP2006524679A JP4960092B2 JP 4960092 B2 JP4960092 B2 JP 4960092B2 JP 2006524679 A JP2006524679 A JP 2006524679A JP 2006524679 A JP2006524679 A JP 2006524679A JP 4960092 B2 JP4960092 B2 JP 4960092B2
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Japan
Prior art keywords
semiconductor layer
semiconductor
layer
bipolar transistor
field effect
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Expired - Fee Related
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JP2006524679A
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English (en)
Japanese (ja)
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JP2007504649A (ja
JP2007504649A5 (enExample
Inventor
ヒル、ダレル
ジー． サダカ、マリアム
レイ、マーカス
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NXP USA Inc
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NXP USA Inc
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Publication date
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Publication of JP2007504649A publication Critical patent/JP2007504649A/ja
Publication of JP2007504649A5 publication Critical patent/JP2007504649A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/801—FETs having heterojunction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/05—Manufacture or treatment characterised by using material-based technologies using Group III-V technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI

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  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP2006524679A 2003-08-29 2004-08-06 半導体部品および半導体部品の製造方法 Expired - Fee Related JP4960092B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/651,544 US6919590B2 (en) 2003-08-29 2003-08-29 Heterojunction bipolar transistor with monolithically integrated junction field effect transistor and method of manufacturing same
US10/651,544 2003-08-29
PCT/US2004/025385 WO2005024954A1 (en) 2003-08-29 2004-08-06 Semiconductor component and method of manufacturing same

Publications (3)

Publication Number Publication Date
JP2007504649A JP2007504649A (ja) 2007-03-01
JP2007504649A5 JP2007504649A5 (enExample) 2007-09-20
JP4960092B2 true JP4960092B2 (ja) 2012-06-27

Family

ID=34217426

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006524679A Expired - Fee Related JP4960092B2 (ja) 2003-08-29 2004-08-06 半導体部品および半導体部品の製造方法

Country Status (5)

Country Link
US (1) US6919590B2 (enExample)
EP (1) EP1661185A4 (enExample)
JP (1) JP4960092B2 (enExample)
TW (1) TWI348217B (enExample)
WO (1) WO2005024954A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200620539A (en) * 2004-10-14 2006-06-16 Koninkl Philips Electronics Nv BiCMOS compatible JFET device and method of manufacturing same
KR100677816B1 (ko) * 2005-03-28 2007-02-02 산요덴키가부시키가이샤 능동 소자 및 스위치 회로 장치
JP4712683B2 (ja) * 2006-12-21 2011-06-29 パナソニック株式会社 トランジスタおよびその製造方法
JP4524298B2 (ja) * 2007-06-04 2010-08-11 パナソニック株式会社 半導体装置の製造方法
JP5295593B2 (ja) * 2008-03-13 2013-09-18 パナソニック株式会社 半導体装置
JP2010206020A (ja) 2009-03-04 2010-09-16 Panasonic Corp 半導体装置
JP2010225765A (ja) * 2009-03-23 2010-10-07 Panasonic Corp 半導体装置及びその製造方法
US9099397B1 (en) * 2012-03-22 2015-08-04 Hrl Laboratories, Llc Fabrication of self aligned base contacts for bipolar transistors
JP6022998B2 (ja) * 2013-05-10 2016-11-09 日本電信電話株式会社 半導体装置
CN107871741A (zh) * 2017-10-30 2018-04-03 湖南大学 一种用于dc/dc斩波电路的单片集成半导体芯片及制备方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5068756A (en) 1989-02-16 1991-11-26 Texas Instruments Incorporated Integrated circuit composed of group III-V compound field effect and bipolar semiconductors
US5223449A (en) 1989-02-16 1993-06-29 Morris Francis J Method of making an integrated circuit composed of group III-V compound field effect and bipolar semiconductors
US5097312A (en) 1989-02-16 1992-03-17 Texas Instruments Incorporated Heterojunction bipolar transistor and integration of same with field effect device
JP2686827B2 (ja) * 1989-08-03 1997-12-08 本田技研工業株式会社 半導体装置
US5077231A (en) 1991-03-15 1991-12-31 Texas Instruments Incorporated Method to integrate HBTs and FETs
US5243207A (en) 1991-03-15 1993-09-07 Texas Instruments Incorporated Method to integrate HBTs and FETs
JPH0541393A (ja) * 1991-08-05 1993-02-19 Nippon Telegr & Teleph Corp <Ntt> 接合型電界効果トランジスタ
JPH06163829A (ja) 1992-07-31 1994-06-10 Texas Instr Inc <Ti> 集積回路とその製法
JP3323544B2 (ja) * 1992-08-21 2002-09-09 株式会社日立製作所 半導体装置
US5250826A (en) * 1992-09-23 1993-10-05 Rockwell International Corporation Planar HBT-FET Device
JPH0883808A (ja) * 1994-07-13 1996-03-26 Hitachi Ltd 半導体装置
DE69522075T2 (de) 1994-11-02 2002-01-03 Trw Inc., Redondo Beach Verfahren zum Herstellen von multifunktionellen, monolithisch-integrierten Schaltungsanordnungen
US6043519A (en) * 1996-09-12 2000-03-28 Hughes Electronics Corporation Junction high electron mobility transistor-heterojunction bipolar transistor (JHEMT-HBT) monolithic microwave integrated circuit (MMIC) and single growth method of fabrication
JP2000058663A (ja) * 1998-08-11 2000-02-25 Mitsubishi Electric Corp 集積型バイアス回路素子

Also Published As

Publication number Publication date
JP2007504649A (ja) 2007-03-01
TW200514253A (en) 2005-04-16
TWI348217B (en) 2011-09-01
US6919590B2 (en) 2005-07-19
EP1661185A4 (en) 2007-08-22
WO2005024954A1 (en) 2005-03-17
US20050045911A1 (en) 2005-03-03
EP1661185A1 (en) 2006-05-31

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