JP4954434B2 - 製造装置 - Google Patents
製造装置 Download PDFInfo
- Publication number
- JP4954434B2 JP4954434B2 JP2003140481A JP2003140481A JP4954434B2 JP 4954434 B2 JP4954434 B2 JP 4954434B2 JP 2003140481 A JP2003140481 A JP 2003140481A JP 2003140481 A JP2003140481 A JP 2003140481A JP 4954434 B2 JP4954434 B2 JP 4954434B2
- Authority
- JP
- Japan
- Prior art keywords
- vapor deposition
- chamber
- container
- substrate
- deposition source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 47
- 238000007740 vapor deposition Methods 0.000 claims description 236
- 239000000463 material Substances 0.000 claims description 159
- 239000000758 substrate Substances 0.000 claims description 155
- 238000010438 heat treatment Methods 0.000 claims description 57
- 230000008021 deposition Effects 0.000 claims description 41
- 238000012546 transfer Methods 0.000 claims description 40
- 238000001704 evaporation Methods 0.000 claims description 33
- 230000008020 evaporation Effects 0.000 claims description 32
- 238000012545 processing Methods 0.000 claims description 20
- 238000000859 sublimation Methods 0.000 claims description 11
- 230000008022 sublimation Effects 0.000 claims description 11
- 239000004020 conductor Substances 0.000 claims description 3
- 230000000903 blocking effect Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 236
- 239000010410 layer Substances 0.000 description 183
- 230000015572 biosynthetic process Effects 0.000 description 89
- 150000002894 organic compounds Chemical class 0.000 description 44
- 238000007789 sealing Methods 0.000 description 40
- 238000000151 deposition Methods 0.000 description 39
- 238000000034 method Methods 0.000 description 33
- 230000005525 hole transport Effects 0.000 description 29
- 239000007789 gas Substances 0.000 description 25
- 239000012298 atmosphere Substances 0.000 description 21
- 239000012535 impurity Substances 0.000 description 21
- 238000009434 installation Methods 0.000 description 20
- 239000012212 insulator Substances 0.000 description 19
- 229910052760 oxygen Inorganic materials 0.000 description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 16
- 238000002347 injection Methods 0.000 description 14
- 239000007924 injection Substances 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 13
- 239000001301 oxygen Substances 0.000 description 13
- 229920005989 resin Polymers 0.000 description 13
- 239000011347 resin Substances 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 12
- 229910045601 alloy Inorganic materials 0.000 description 11
- 239000000956 alloy Substances 0.000 description 11
- 229910052757 nitrogen Inorganic materials 0.000 description 11
- 239000003566 sealing material Substances 0.000 description 10
- 239000002019 doping agent Substances 0.000 description 9
- 239000011261 inert gas Substances 0.000 description 9
- 230000007246 mechanism Effects 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000011368 organic material Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 7
- 238000011068 loading method Methods 0.000 description 7
- 230000001681 protective effect Effects 0.000 description 7
- 238000000746 purification Methods 0.000 description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 230000005284 excitation Effects 0.000 description 5
- 238000012423 maintenance Methods 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 239000000565 sealant Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000010549 co-Evaporation Methods 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000005281 excited state Effects 0.000 description 4
- 230000005283 ground state Effects 0.000 description 4
- 238000004020 luminiscence type Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000012299 nitrogen atmosphere Substances 0.000 description 4
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 3
- 150000004984 aromatic diamines Chemical class 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- VOFUROIFQGPCGE-UHFFFAOYSA-N nile red Chemical compound C1=CC=C2C3=NC4=CC=C(N(CC)CC)C=C4OC3=CC(=O)C2=C1 VOFUROIFQGPCGE-UHFFFAOYSA-N 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 229910017073 AlLi Inorganic materials 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910017911 MgIn Inorganic materials 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 239000002274 desiccant Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000011152 fibreglass Substances 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- 238000005339 levitation Methods 0.000 description 2
- AHLBNYSZXLDEJQ-FWEHEUNISA-N orlistat Chemical compound CCCCCCCCCCC[C@H](OC(=O)[C@H](CC(C)C)NC=O)C[C@@H]1OC(=O)[C@H]1CCCCCC AHLBNYSZXLDEJQ-FWEHEUNISA-N 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 229920002620 polyvinyl fluoride Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- MIOPJNTWMNEORI-GMSGAONNSA-N (S)-camphorsulfonic acid Chemical compound C1C[C@@]2(CS(O)(=O)=O)C(=O)C[C@@H]1C2(C)C MIOPJNTWMNEORI-GMSGAONNSA-N 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- -1 MgAg Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- 240000000220 Panda oleosa Species 0.000 description 1
- 235000016496 Panda oleosa Nutrition 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910000856 hastalloy Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000012785 packaging film Substances 0.000 description 1
- 229920006280 packaging film Polymers 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920003190 poly( p-benzamide) Polymers 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physical Vapour Deposition (AREA)
- Electroluminescent Light Sources (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003140481A JP4954434B2 (ja) | 2002-05-17 | 2003-05-19 | 製造装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002143803 | 2002-05-17 | ||
| JP2002143803 | 2002-05-17 | ||
| JP2003140481A JP4954434B2 (ja) | 2002-05-17 | 2003-05-19 | 製造装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004047452A JP2004047452A (ja) | 2004-02-12 |
| JP2004047452A5 JP2004047452A5 (enrdf_load_stackoverflow) | 2006-07-06 |
| JP4954434B2 true JP4954434B2 (ja) | 2012-06-13 |
Family
ID=31719507
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003140481A Expired - Fee Related JP4954434B2 (ja) | 2002-05-17 | 2003-05-19 | 製造装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4954434B2 (enrdf_load_stackoverflow) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005117498A1 (ja) * | 2004-05-31 | 2005-12-08 | Ulvac, Inc | 有機ｅｌ素子の製造方法および有機ｅｌ素子製造装置の洗浄方法 |
| US7753751B2 (en) | 2004-09-29 | 2010-07-13 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating the display device |
| JP2006278068A (ja) * | 2005-03-28 | 2006-10-12 | Fuji Photo Film Co Ltd | 有機電界発光素子の製造方法、及び有機電界発光素子 |
| JP2006278067A (ja) * | 2005-03-28 | 2006-10-12 | Fuji Photo Film Co Ltd | 有機電界発光素子の製造方法、及び有機電界発光素子 |
| KR101189774B1 (ko) | 2005-12-05 | 2012-10-10 | 주식회사 탑 엔지니어링 | 보호 캡 합착 공정 라인 |
| US8608855B2 (en) | 2006-04-28 | 2013-12-17 | Semiconductor Energy Laboratory Co., Ltd. | Electrode cover and evaporation device |
| EP1983072A1 (en) * | 2007-04-20 | 2008-10-22 | Applied Materials, Inc. | Processing device and method for processing a subtrate |
| US11975546B2 (en) | 2008-06-13 | 2024-05-07 | Kateeva, Inc. | Gas enclosure assembly and system |
| US12064979B2 (en) | 2008-06-13 | 2024-08-20 | Kateeva, Inc. | Low-particle gas enclosure systems and methods |
| US12018857B2 (en) | 2008-06-13 | 2024-06-25 | Kateeva, Inc. | Gas enclosure assembly and system |
| US10434804B2 (en) | 2008-06-13 | 2019-10-08 | Kateeva, Inc. | Low particle gas enclosure systems and methods |
| US20100279021A1 (en) | 2009-05-04 | 2010-11-04 | Samsung Mobile Display Co., Ltd. | Apparatus for depositing organic material and depositing method thereof |
| JP2010140917A (ja) * | 2010-03-25 | 2010-06-24 | Fujifilm Corp | 有機電界発光素子 |
| JP5846780B2 (ja) * | 2011-06-30 | 2016-01-20 | 株式会社アルバック | 真空処理装置及び真空処理方法、リチウムイオン二次電池の製造方法 |
| JP5879594B2 (ja) * | 2012-03-02 | 2016-03-08 | 株式会社昭和真空 | 成膜装置 |
| KR102064391B1 (ko) | 2012-08-31 | 2020-01-10 | 삼성디스플레이 주식회사 | 기판 처리 장치 |
| JP6392874B2 (ja) | 2013-12-26 | 2018-09-19 | カティーバ， インコーポレイテッド | 電子デバイスの熱処理のための装置および技法 |
| CN107611287A (zh) | 2014-01-21 | 2018-01-19 | 科迪华公司 | 用于电子装置封装的设备和技术 |
| KR102315014B1 (ko) | 2014-04-30 | 2021-10-20 | 카티바, 인크. | 가스 쿠션 장비 및 기판 코팅 기술 |
| WO2018085715A2 (en) * | 2016-11-06 | 2018-05-11 | Orbotech LT Solar, LLC. | Method and apparatus for encapsulation of an organic light emitting diode |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5536924A (en) * | 1978-09-04 | 1980-03-14 | Toko Inc | Manufacturing of mn-bi thin film |
| JPS5941510B2 (ja) * | 1979-07-24 | 1984-10-08 | 双葉電子工業株式会社 | 酸化ベリリウム膜とその形成方法 |
| JPS57134555A (en) * | 1981-02-10 | 1982-08-19 | Fuji Photo Film Co Ltd | Method and device for forming thin film |
| JPS63149371A (ja) * | 1986-12-10 | 1988-06-22 | Fuji Seiki Kk | 複数の蒸着源を有する蒸着源保持装置 |
| JPH03197668A (ja) * | 1989-12-25 | 1991-08-29 | Shinku Kikai Kogyo Kk | 蒸発源およびそれを用いた蒸発装置 |
| JPH05230627A (ja) * | 1992-02-21 | 1993-09-07 | Yamaha Corp | 真空蒸着装置 |
| JPH07126838A (ja) * | 1993-10-28 | 1995-05-16 | Matsushita Electric Ind Co Ltd | 蒸着ボート |
| JP3371177B2 (ja) * | 1995-02-13 | 2003-01-27 | ソニー株式会社 | 蒸着装置とフリップチップｉｃの製造方法 |
| JPH1025563A (ja) * | 1996-07-08 | 1998-01-27 | Shinko Seiki Co Ltd | 真空蒸着装置及び真空蒸着方法 |
| JPH10324966A (ja) * | 1997-05-27 | 1998-12-08 | Sony Corp | 真空蒸着装置及び真空蒸着法 |
| JPH11126686A (ja) * | 1997-10-23 | 1999-05-11 | Matsushita Electric Ind Co Ltd | 有機エレクトロルミネセンス素子の製造装置 |
| JP3782245B2 (ja) * | 1998-10-28 | 2006-06-07 | Ｔｄｋ株式会社 | 有機ｅｌ表示装置の製造装置及び製造方法 |
| US6202591B1 (en) * | 1998-11-12 | 2001-03-20 | Flex Products, Inc. | Linear aperture deposition apparatus and coating process |
| JP2000315576A (ja) * | 1999-03-01 | 2000-11-14 | Toray Ind Inc | 有機電界発光素子およびその製造方法 |
| JP2001059161A (ja) * | 1999-08-20 | 2001-03-06 | Tdk Corp | 有機薄膜の製造装置および製造方法 |
| TW490714B (en) * | 1999-12-27 | 2002-06-11 | Semiconductor Energy Lab | Film formation apparatus and method for forming a film |
| JP2001234335A (ja) * | 2000-02-17 | 2001-08-31 | Matsushita Electric Works Ltd | 蒸着装置 |
-
2003
- 2003-05-19 JP JP2003140481A patent/JP4954434B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2004047452A (ja) | 2004-02-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4503242B2 (ja) | 蒸着装置 | |
| KR101055688B1 (ko) | 제조장치 | |
| KR100991174B1 (ko) | 증착방법, 증착장치 및 발광장치의 제조방법 | |
| JP4954434B2 (ja) | 製造装置 | |
| KR100961401B1 (ko) | 발광 디바이스를 제조하는 방법 및 발광 디바이스를제조하는 장치 | |
| KR101006938B1 (ko) | 제조 시스템 및 발광장치 제작방법 | |
| US9551063B2 (en) | Fabrication system and a fabrication method of a light emitting device | |
| JP4634698B2 (ja) | 蒸着装置 | |
| JP4373235B2 (ja) | 成膜装置及び成膜方法 | |
| JP2004006311A (ja) | 発光装置の作製方法および製造装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060518 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060518 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100127 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100223 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100409 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100622 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100805 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20110208 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110407 |
|
| A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20110415 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20111004 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111118 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120313 |
|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120314 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 4954434 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150323 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150323 Year of fee payment: 3 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |