JP4947150B2 - 固体電解コンデンサの製造方法 - Google Patents
固体電解コンデンサの製造方法 Download PDFInfo
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- JP4947150B2 JP4947150B2 JP2009530728A JP2009530728A JP4947150B2 JP 4947150 B2 JP4947150 B2 JP 4947150B2 JP 2009530728 A JP2009530728 A JP 2009530728A JP 2009530728 A JP2009530728 A JP 2009530728A JP 4947150 B2 JP4947150 B2 JP 4947150B2
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- oxide film
- separator
- film layer
- dielectric oxide
- anode foil
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- 239000003990 capacitor Substances 0.000 title claims description 76
- 239000007787 solid Substances 0.000 title claims description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000011888 foil Substances 0.000 claims description 77
- 239000000126 substance Substances 0.000 claims description 27
- 229910019142 PO4 Inorganic materials 0.000 claims description 24
- 238000006243 chemical reaction Methods 0.000 claims description 24
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims description 24
- 239000010452 phosphate Substances 0.000 claims description 24
- 239000007784 solid electrolyte Substances 0.000 claims description 14
- LFVGISIMTYGQHF-UHFFFAOYSA-N ammonium dihydrogen phosphate Chemical group [NH4+].OP(O)([O-])=O LFVGISIMTYGQHF-UHFFFAOYSA-N 0.000 claims description 11
- 229910000387 ammonium dihydrogen phosphate Inorganic materials 0.000 claims description 11
- 229920001940 conductive polymer Polymers 0.000 claims description 11
- 235000019837 monoammonium phosphate Nutrition 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 4
- 238000004804 winding Methods 0.000 claims description 3
- 239000007800 oxidant agent Substances 0.000 claims description 2
- 230000000379 polymerizing effect Effects 0.000 claims description 2
- 229930192474 thiophene Natural products 0.000 claims description 2
- 229910052723 transition metal Inorganic materials 0.000 claims description 2
- -1 transition metal salt Chemical class 0.000 claims description 2
- 239000000243 solution Substances 0.000 description 17
- 239000003792 electrolyte Substances 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 8
- 239000007788 liquid Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 4
- YMMGRPLNZPTZBS-UHFFFAOYSA-N 2,3-dihydrothieno[2,3-b][1,4]dioxine Chemical compound O1CCOC2=C1C=CS2 YMMGRPLNZPTZBS-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229920005549 butyl rubber Polymers 0.000 description 2
- 238000011088 calibration curve Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003811 curling process Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- JOXIMZWYDAKGHI-UHFFFAOYSA-M toluene-4-sulfonate Chemical compound CC1=CC=C(S([O-])(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-M 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/022—Electrolytes; Absorbents
- H01G9/025—Solid electrolytes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/022—Electrolytes; Absorbents
- H01G9/025—Solid electrolytes
- H01G9/028—Organic semiconducting electrolytes, e.g. TCNQ
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/15—Solid electrolytic capacitors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Description
本発明の固体電解コンデンサの製造方法は、金属からなる陽極箔の表面を化成処理して誘電体酸化皮膜層を形成するステップと、金属からなる陰極箔が絶縁性のセパレータを介して前記誘電体酸化皮膜層と対向するように、陽極箔とセパレータと陰極箔とを積層するステップと、陽極箔と前記セパレータと陰極箔とを積層するステップの後で、陽極箔とセパレータと陰極箔とを巻回してコンデンサ素子を形成するステップと、リン酸塩を含有する化成液にコンデンサ素子を浸して誘電体酸化皮膜層を修復するステップと、誘電体酸化皮膜層を修復するステップの後で、陽極箔上にリン酸塩が残留するようにコンデンサ素子を洗浄せずに乾燥させ、セパレータに導電性高分子を含浸させて固体電解質層を形成し、リン酸塩を陽極箔の1cm 2 あたり0.5μg〜50μgだけ存在させるものである。
1A 表面
1B 誘電体酸化皮膜層
1C 電解質
2 陰極箔
3 セパレータ
4 固体電解質層
4A 導電性高分子
Claims (3)
- 金属からなる陽極箔の表面を化成処理して誘電体酸化皮膜層を形成するステップと、
金属からなる陰極箔が絶縁性のセパレータを介して前記誘電体酸化皮膜層と対向するように、前記陽極箔と前記セパレータと前記陰極箔とを積層するステップと、
前記陽極箔と前記セパレータと前記陰極箔とを積層するステップの後で、前記陽極箔と前記セパレータと前記陰極箔とを巻回してコンデンサ素子を形成するステップと、
リン酸塩を含有する化成液に前記コンデンサ素子を浸して前記誘電体酸化皮膜層を修復するステップと、
前記誘電体酸化皮膜層を修復するステップの後で、前記陽極箔上に前記リン酸塩が残留するように前記コンデンサ素子を洗浄せずに乾燥させ、前記セパレータに導電性高分子を含浸させて固体電解質層を形成し、前記リン酸塩を前記陽極箔の1cm 2 あたり0.5μg〜50μgだけ存在させる、固体電解コンデンサの製造方法。 - 前記リン酸塩はリン酸二水素アンモニウムである、請求項1に記載の固体電解コンデンサの製造方法。
- 前記固体電解質層を形成するステップは、チオフェンおよびその誘導体を遷移金属塩からなる酸化剤で重合させた導電性高分子を前記セパレータに含浸させるステップを含む、請求項1に記載の固体電解コンデンサの製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009530728A JP4947150B2 (ja) | 2008-03-10 | 2009-03-06 | 固体電解コンデンサの製造方法 |
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008058938 | 2008-03-10 | ||
JP2008058938 | 2008-03-10 | ||
JP2008058939 | 2008-03-10 | ||
JP2008058939 | 2008-03-10 | ||
JP2008162908 | 2008-06-23 | ||
JP2008162908 | 2008-06-23 | ||
PCT/JP2009/001024 WO2009113285A1 (ja) | 2008-03-10 | 2009-03-06 | 固体電解コンデンサとその製造方法 |
JP2009530728A JP4947150B2 (ja) | 2008-03-10 | 2009-03-06 | 固体電解コンデンサの製造方法 |
Publications (2)
Publication Number | Publication Date |
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JPWO2009113285A1 JPWO2009113285A1 (ja) | 2011-07-21 |
JP4947150B2 true JP4947150B2 (ja) | 2012-06-06 |
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JP2009530728A Active JP4947150B2 (ja) | 2008-03-10 | 2009-03-06 | 固体電解コンデンサの製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8154854B2 (ja) |
JP (1) | JP4947150B2 (ja) |
CN (1) | CN101681725B (ja) |
WO (1) | WO2009113285A1 (ja) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011082313A (ja) * | 2009-10-06 | 2011-04-21 | Shin Etsu Polymer Co Ltd | 固体電解キャパシタ及びその製造方法 |
CN102013337B (zh) * | 2010-10-25 | 2012-09-05 | 福建国光电子科技股份有限公司 | 一种固体电解电容器的处理工艺 |
US9030806B2 (en) * | 2012-01-25 | 2015-05-12 | Kemet Electronics Corporation | Polymerization method for preparing conductive polymer |
JP5476618B1 (ja) * | 2013-03-29 | 2014-04-23 | パナソニック株式会社 | 導電性高分子微粒子分散体の製造方法およびその導電性高分子微粒子分散体を用いた電解コンデンサの製造方法 |
WO2015033566A1 (ja) * | 2013-09-09 | 2015-03-12 | パナソニックIpマネジメント株式会社 | 蓄電デバイスおよびその製造方法およびセパレータ |
CN107004508B (zh) * | 2014-12-01 | 2020-08-28 | 松下知识产权经营株式会社 | 电解电容器及其制造方法 |
CN105161305A (zh) * | 2015-09-25 | 2015-12-16 | 扬州升阳电子有限公司 | 一种导电聚合物固态电容的生产方法 |
JP7039848B2 (ja) * | 2017-03-14 | 2022-03-23 | 日本ケミコン株式会社 | コンデンサおよびその製造方法 |
JP7221588B2 (ja) * | 2017-10-02 | 2023-02-14 | 日本ケミコン株式会社 | 巻回形固体電解コンデンサ及び製造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2003297684A (ja) * | 2002-03-28 | 2003-10-17 | Nippon Chemicon Corp | 固体電解コンデンサの製造方法 |
Family Cites Families (7)
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US4934033A (en) * | 1987-01-23 | 1990-06-19 | Nitsuko Corporation | Method of manufacturing a solid electrolytic capacitor |
US6208503B1 (en) | 1997-06-06 | 2001-03-27 | Nippon Chemi-Con Corporation | Solid electrolytic capacitor and process for producing the same |
JP3319501B2 (ja) | 1997-06-06 | 2002-09-03 | 日本ケミコン株式会社 | 固体電解コンデンサおよびその製造方法 |
JP2004165206A (ja) * | 2002-11-08 | 2004-06-10 | Nippon Chemicon Corp | 電解コンデンサ |
JP2004265924A (ja) * | 2003-02-12 | 2004-09-24 | Sanyo Electric Co Ltd | 固体電解コンデンサ |
JP4866586B2 (ja) | 2005-09-30 | 2012-02-01 | 三菱化学株式会社 | 電解コンデンサ及び電解コンデンサの製造方法 |
CN1963966A (zh) * | 2006-11-29 | 2007-05-16 | 大连理工大学 | 混合型超级电容器 |
-
2009
- 2009-03-06 US US12/596,513 patent/US8154854B2/en active Active
- 2009-03-06 JP JP2009530728A patent/JP4947150B2/ja active Active
- 2009-03-06 WO PCT/JP2009/001024 patent/WO2009113285A1/ja active Application Filing
- 2009-03-06 CN CN200980000295XA patent/CN101681725B/zh active Active
Patent Citations (1)
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JP2003297684A (ja) * | 2002-03-28 | 2003-10-17 | Nippon Chemicon Corp | 固体電解コンデンサの製造方法 |
Also Published As
Publication number | Publication date |
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CN101681725B (zh) | 2011-12-14 |
US8154854B2 (en) | 2012-04-10 |
US20100118470A1 (en) | 2010-05-13 |
CN101681725A (zh) | 2010-03-24 |
WO2009113285A1 (ja) | 2009-09-17 |
JPWO2009113285A1 (ja) | 2011-07-21 |
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