JP4945037B2 - タングステンスパッタリングターゲットおよびその製造方法 - Google Patents
タングステンスパッタリングターゲットおよびその製造方法 Download PDFInfo
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- JP4945037B2 JP4945037B2 JP2001264741A JP2001264741A JP4945037B2 JP 4945037 B2 JP4945037 B2 JP 4945037B2 JP 2001264741 A JP2001264741 A JP 2001264741A JP 2001264741 A JP2001264741 A JP 2001264741A JP 4945037 B2 JP4945037 B2 JP 4945037B2
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- Prior art keywords
- sputtering target
- less
- crystal
- orientation ratio
- crystal orientation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 238000005477 sputtering target Methods 0.000 title claims description 142
- 238000004519 manufacturing process Methods 0.000 title claims description 31
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 title claims description 20
- 229910052721 tungsten Inorganic materials 0.000 title claims description 19
- 239000010937 tungsten Substances 0.000 title claims description 19
- 239000013078 crystal Substances 0.000 claims description 137
- 238000005245 sintering Methods 0.000 claims description 98
- 238000004544 sputter deposition Methods 0.000 claims description 40
- 238000002441 X-ray diffraction Methods 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 30
- 238000005498 polishing Methods 0.000 claims description 24
- 239000010949 copper Substances 0.000 claims description 22
- 238000005219 brazing Methods 0.000 claims description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- 239000012535 impurity Substances 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 13
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- 239000011651 chromium Substances 0.000 claims description 12
- 239000011734 sodium Substances 0.000 claims description 12
- 229910052700 potassium Inorganic materials 0.000 claims description 11
- 229910052776 Thorium Inorganic materials 0.000 claims description 10
- 229910052770 Uranium Inorganic materials 0.000 claims description 10
- 229910052804 chromium Inorganic materials 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 10
- 229910052708 sodium Inorganic materials 0.000 claims description 10
- 229910052742 iron Inorganic materials 0.000 claims description 9
- 238000005530 etching Methods 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 4
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 3
- 239000011591 potassium Substances 0.000 claims description 3
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 claims description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 238000000227 grinding Methods 0.000 claims 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 description 93
- 239000002245 particle Substances 0.000 description 50
- 239000000843 powder Substances 0.000 description 37
- 235000012431 wafers Nutrition 0.000 description 25
- 238000001816 cooling Methods 0.000 description 20
- 238000001513 hot isostatic pressing Methods 0.000 description 20
- 238000007872 degassing Methods 0.000 description 17
- 238000009826 distribution Methods 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 14
- 239000000463 material Substances 0.000 description 14
- 239000000758 substrate Substances 0.000 description 14
- 238000005304 joining Methods 0.000 description 13
- 239000001257 hydrogen Substances 0.000 description 12
- 229910052739 hydrogen Inorganic materials 0.000 description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 10
- 239000010409 thin film Substances 0.000 description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 239000001301 oxygen Substances 0.000 description 7
- 229910052760 oxygen Inorganic materials 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000007730 finishing process Methods 0.000 description 6
- 238000001755 magnetron sputter deposition Methods 0.000 description 6
- 239000013077 target material Substances 0.000 description 6
- 230000002159 abnormal effect Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005242 forging Methods 0.000 description 4
- 230000000630 rising effect Effects 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000007731 hot pressing Methods 0.000 description 3
- 238000005098 hot rolling Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical class [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 238000007088 Archimedes method Methods 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- -1 potassium ferricyanide Chemical compound 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000013341 scale-up Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 238000005478 sputtering type Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- DNYWZCXLKNTFFI-UHFFFAOYSA-N uranium Chemical compound [U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U] DNYWZCXLKNTFFI-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Landscapes
- Powder Metallurgy (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001264741A JP4945037B2 (ja) | 2000-09-07 | 2001-08-31 | タングステンスパッタリングターゲットおよびその製造方法 |
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000270998 | 2000-09-07 | ||
| JP2000-270998 | 2000-09-07 | ||
| JP2000270998 | 2000-09-07 | ||
| JP2001161617 | 2001-05-30 | ||
| JP2001-161617 | 2001-05-30 | ||
| JP2001161617 | 2001-05-30 | ||
| JP2001264741A JP4945037B2 (ja) | 2000-09-07 | 2001-08-31 | タングステンスパッタリングターゲットおよびその製造方法 |
Related Child Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011277560A Division JP5675577B2 (ja) | 2000-09-07 | 2011-12-19 | タングステンスパッタリングターゲットおよびその製造方法 |
| JP2011277558A Division JP5562928B2 (ja) | 2000-09-07 | 2011-12-19 | タングステンスパッタリングターゲットおよびその製造方法 |
| JP2011277559A Division JP5562929B2 (ja) | 2000-09-07 | 2011-12-19 | タングステンスパッタリングターゲットおよびその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003049264A JP2003049264A (ja) | 2003-02-21 |
| JP2003049264A5 JP2003049264A5 (enrdf_load_stackoverflow) | 2008-08-28 |
| JP4945037B2 true JP4945037B2 (ja) | 2012-06-06 |
Family
ID=27344566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001264741A Expired - Lifetime JP4945037B2 (ja) | 2000-09-07 | 2001-08-31 | タングステンスパッタリングターゲットおよびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4945037B2 (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108607943A (zh) * | 2016-12-09 | 2018-10-02 | 宁波江丰电子材料股份有限公司 | 锻造方法及靶材的形成方法 |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007040014A1 (ja) | 2005-10-04 | 2007-04-12 | Nippon Mining & Metals Co., Ltd. | スパッタリングターゲット |
| KR101065427B1 (ko) * | 2005-11-07 | 2011-09-19 | 도시바 마테리알 가부시키가이샤 | 스퍼터링 타겟 및 그 제조 방법 |
| TW200741022A (en) * | 2006-03-14 | 2007-11-01 | Applied Materials Inc | Pre-conditioning a sputtering target prior to sputtering |
| JP4885065B2 (ja) * | 2007-06-11 | 2012-02-29 | Ｊｘ日鉱日石金属株式会社 | スッパタリング用タングステン焼結体ターゲットの製造方法 |
| US20110094879A1 (en) | 2008-06-02 | 2011-04-28 | Jx Nippon Mining & Metals Corporation | Tungsten Sintered Sputtering Target |
| WO2010119785A1 (ja) * | 2009-04-17 | 2010-10-21 | Jx日鉱日石金属株式会社 | 半導体配線用バリア膜、焼結体スパッタリングターゲット及びスパッタリングターゲットの製造方法 |
| US9017493B2 (en) | 2009-08-12 | 2015-04-28 | Ulvac, Inc. | Method of manufacturing a sputtering target and sputtering target |
| WO2012042791A1 (ja) * | 2010-09-29 | 2012-04-05 | 株式会社アルバック | タングステンターゲットおよびその製造方法 |
| CN112695273A (zh) * | 2012-09-18 | 2021-04-23 | 捷客斯金属株式会社 | 溅射靶 |
| JP6716452B2 (ja) * | 2014-03-31 | 2020-07-01 | 株式会社東芝 | 再生スパッタリングターゲットの製造方法および再生スパッタリング |
| JP6956080B2 (ja) | 2015-12-23 | 2021-10-27 | ノルスク・ヒドロ・アーエスアーＮｏｒｓｋ Ｈｙｄｒｏ Ａｓａ | 改善された機械特性を有する熱処理可能なアルミニウム合金を製造するための方法 |
| JP2020143359A (ja) * | 2019-03-08 | 2020-09-10 | Ｊｘ金属株式会社 | スパッタリングターゲット部材の製造方法及びスパッタリングターゲット部材 |
| CN115740452B (zh) * | 2022-11-09 | 2024-11-22 | 有研亿金新材料(山东)有限公司 | 一种高纯高致密细晶低氧钨靶材的制备方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04160104A (ja) * | 1990-10-23 | 1992-06-03 | Hitachi Metals Ltd | タングステンターゲットの製造方法 |
| JPH0593267A (ja) * | 1991-10-01 | 1993-04-16 | Hitachi Metals Ltd | 半導体用タングステンターゲツトおよびその製造方法 |
| JP3280054B2 (ja) * | 1992-02-10 | 2002-04-30 | 日立金属株式会社 | 半導体用タングステンターゲットの製造方法 |
| JP2646058B2 (ja) * | 1993-01-29 | 1997-08-25 | 東京タングステン株式会社 | スパッターターゲット材及びその製造方法 |
| JPH0776771A (ja) * | 1993-09-08 | 1995-03-20 | Japan Energy Corp | タングステンスパッタリングターゲット |
| JP3112804B2 (ja) * | 1995-03-13 | 2000-11-27 | セントラル硝子株式会社 | 半導体用タングステンターゲット |
-
2001
- 2001-08-31 JP JP2001264741A patent/JP4945037B2/ja not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108607943A (zh) * | 2016-12-09 | 2018-10-02 | 宁波江丰电子材料股份有限公司 | 锻造方法及靶材的形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2003049264A (ja) | 2003-02-21 |
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