JP4942551B2 - 電解用電極 - Google Patents
電解用電極 Download PDFInfo
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- JP4942551B2 JP4942551B2 JP2007139982A JP2007139982A JP4942551B2 JP 4942551 B2 JP4942551 B2 JP 4942551B2 JP 2007139982 A JP2007139982 A JP 2007139982A JP 2007139982 A JP2007139982 A JP 2007139982A JP 4942551 B2 JP4942551 B2 JP 4942551B2
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- JP
- Japan
- Prior art keywords
- layer
- electrode
- tantalum
- thickness
- electrolysis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000005868 electrolysis reaction Methods 0.000 title claims description 24
- 229910052715 tantalum Inorganic materials 0.000 claims description 52
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 52
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 49
- 238000007747 plating Methods 0.000 claims description 35
- 239000003054 catalyst Substances 0.000 claims description 25
- 229910052697 platinum Inorganic materials 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 22
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910052741 iridium Inorganic materials 0.000 claims description 7
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052703 rhodium Inorganic materials 0.000 claims description 6
- 239000010948 rhodium Substances 0.000 claims description 6
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 6
- 239000011149 active material Substances 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 239000010955 niobium Substances 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 1
- -1 platinum group metal oxide Chemical class 0.000 claims 1
- 238000000034 method Methods 0.000 description 21
- 239000010408 film Substances 0.000 description 19
- 239000000243 solution Substances 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 16
- 239000000463 material Substances 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 14
- 238000004544 sputter deposition Methods 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 10
- 229910000510 noble metal Inorganic materials 0.000 description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 9
- 229910052737 gold Inorganic materials 0.000 description 9
- 239000010931 gold Substances 0.000 description 9
- 238000002161 passivation Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 238000010304 firing Methods 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000010970 precious metal Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- IXSUHTFXKKBBJP-UHFFFAOYSA-L azanide;platinum(2+);dinitrite Chemical compound [NH2-].[NH2-].[Pt+2].[O-]N=O.[O-]N=O IXSUHTFXKKBBJP-UHFFFAOYSA-L 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 150000003481 tantalum Chemical class 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- PUFIZHPPRJVXJC-UHFFFAOYSA-N [O-2].[Ta+5].[Ir+]=O.[O-2].[O-2] Chemical compound [O-2].[Ta+5].[Ir+]=O.[O-2].[O-2] PUFIZHPPRJVXJC-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 238000010828 elution Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000457 iridium oxide Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- WMFZVLIHQVUVGO-UHFFFAOYSA-N phenyl-(4-phenylphenyl)methanol Chemical compound C=1C=C(C=2C=CC=CC=2)C=CC=1C(O)C1=CC=CC=C1 WMFZVLIHQVUVGO-UHFFFAOYSA-N 0.000 description 1
- 238000005554 pickling Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- HKSGQTYSSZOJOA-UHFFFAOYSA-N potassium argentocyanide Chemical compound [K+].[Ag+].N#[C-].N#[C-] HKSGQTYSSZOJOA-UHFFFAOYSA-N 0.000 description 1
- XTFKWYDMKGAZKK-UHFFFAOYSA-N potassium;gold(1+);dicyanide Chemical compound [K+].[Au+].N#[C-].N#[C-] XTFKWYDMKGAZKK-UHFFFAOYSA-N 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- YWFDDXXMOPZFFM-UHFFFAOYSA-H rhodium(3+);trisulfate Chemical compound [Rh+3].[Rh+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O YWFDDXXMOPZFFM-UHFFFAOYSA-H 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 150000003482 tantalum compounds Chemical class 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- DANYXEHCMQHDNX-UHFFFAOYSA-K trichloroiridium Chemical compound Cl[Ir](Cl)Cl DANYXEHCMQHDNX-UHFFFAOYSA-K 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
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- Electrodes For Compound Or Non-Metal Manufacture (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Description
Claims (4)
- 導電性金属よりなる電極基材と、該電極基材上に形成される中間層と、該中間層上に形成され電極触媒活性物質よりなる触媒層と、からなる電解用電極において、
前記中間層は、電極基材上に形成され、厚さ0.3〜0.7μmの白金、イリジウム、ロジウムのいずれかよりなる下地層と、該下地層上に形成され、厚さ0.5〜1.5μmのタンタル層とからなることを特徴とする電解用電極。 - 下地層は、めっきにより形成されるものである請求項1記載の電解用電極。
- 電極基材は、チタニウム、ニオブ、タンタルのいずれかよりなる請求項1又は請求項2記載の電解用電極。
- 触媒層は、白金族金属酸化物、又は、その混合物、若しくは、これらにバルブ金属の酸化物を含むもの、のいずれかである請求項1〜請求項3のいずれか1項記載の電解用電極。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007139982A JP4942551B2 (ja) | 2007-05-28 | 2007-05-28 | 電解用電極 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007139982A JP4942551B2 (ja) | 2007-05-28 | 2007-05-28 | 電解用電極 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008291335A JP2008291335A (ja) | 2008-12-04 |
JP4942551B2 true JP4942551B2 (ja) | 2012-05-30 |
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Application Number | Title | Priority Date | Filing Date |
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JP2007139982A Active JP4942551B2 (ja) | 2007-05-28 | 2007-05-28 | 電解用電極 |
Country Status (1)
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JP (1) | JP4942551B2 (ja) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2761751B2 (ja) * | 1989-03-20 | 1998-06-04 | ペルメレック電極株式会社 | 耐久性電解用電極及びその製造方法 |
JPH06128781A (ja) * | 1992-10-14 | 1994-05-10 | Daiki Rubber Kogyo Kk | 高耐久性電解用電極 |
JP3045031B2 (ja) * | 1994-08-16 | 2000-05-22 | ダイソー株式会社 | 酸素発生用陽極の製法 |
JP3566023B2 (ja) * | 1997-03-25 | 2004-09-15 | 田中貴金属工業株式会社 | フッ素含有液電解用電極 |
JP2004323930A (ja) * | 2003-04-25 | 2004-11-18 | Nisshin Kasei Kk | 陽極基体、および陽極 |
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2007
- 2007-05-28 JP JP2007139982A patent/JP4942551B2/ja active Active
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