JP4940328B2 - 光電変換装置 - Google Patents

光電変換装置 Download PDF

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Publication number
JP4940328B2
JP4940328B2 JP2010104455A JP2010104455A JP4940328B2 JP 4940328 B2 JP4940328 B2 JP 4940328B2 JP 2010104455 A JP2010104455 A JP 2010104455A JP 2010104455 A JP2010104455 A JP 2010104455A JP 4940328 B2 JP4940328 B2 JP 4940328B2
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Japan
Prior art keywords
layer
intermediate layer
type
refractive index
type layer
Prior art date
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Expired - Fee Related
Application number
JP2010104455A
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English (en)
Japanese (ja)
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JP2011233786A5 (enExample
JP2011233786A (ja
Inventor
義和 山岡
茂郎 矢田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP2010104455A priority Critical patent/JP4940328B2/ja
Priority to PCT/JP2011/060043 priority patent/WO2011136167A1/ja
Publication of JP2011233786A publication Critical patent/JP2011233786A/ja
Publication of JP2011233786A5 publication Critical patent/JP2011233786A5/ja
Application granted granted Critical
Publication of JP4940328B2 publication Critical patent/JP4940328B2/ja
Priority to US13/614,788 priority patent/US20130014810A1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

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  • Photovoltaic Devices (AREA)
JP2010104455A 2010-04-28 2010-04-28 光電変換装置 Expired - Fee Related JP4940328B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010104455A JP4940328B2 (ja) 2010-04-28 2010-04-28 光電変換装置
PCT/JP2011/060043 WO2011136167A1 (ja) 2010-04-28 2011-04-25 光電変換装置
US13/614,788 US20130014810A1 (en) 2010-04-28 2012-09-13 Photoelectric conversion device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010104455A JP4940328B2 (ja) 2010-04-28 2010-04-28 光電変換装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011274431A Division JP5420628B2 (ja) 2011-12-15 2011-12-15 光電変換装置

Publications (3)

Publication Number Publication Date
JP2011233786A JP2011233786A (ja) 2011-11-17
JP2011233786A5 JP2011233786A5 (enExample) 2012-01-26
JP4940328B2 true JP4940328B2 (ja) 2012-05-30

Family

ID=44861466

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010104455A Expired - Fee Related JP4940328B2 (ja) 2010-04-28 2010-04-28 光電変換装置

Country Status (3)

Country Link
US (1) US20130014810A1 (enExample)
JP (1) JP4940328B2 (enExample)
WO (1) WO2011136167A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013065538A1 (ja) * 2011-11-03 2013-05-10 三洋電機株式会社 光電変換装置
US8904876B2 (en) * 2012-09-29 2014-12-09 Stryker Corporation Flexible piezocapacitive and piezoresistive force and pressure sensors
JP6306411B2 (ja) * 2014-04-17 2018-04-04 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8207010B2 (en) * 2007-06-05 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing photoelectric conversion device
JP5400322B2 (ja) * 2008-05-30 2014-01-29 株式会社カネカ シリコン系薄膜太陽電池およびその製造方法
TW201021229A (en) * 2008-11-21 2010-06-01 Ind Tech Res Inst Solar cell having reflective structure

Also Published As

Publication number Publication date
US20130014810A1 (en) 2013-01-17
JP2011233786A (ja) 2011-11-17
WO2011136167A1 (ja) 2011-11-03

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