JP4937757B2 - パターン化被覆フィルムの形成方法及び装置 - Google Patents
パターン化被覆フィルムの形成方法及び装置 Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24851—Intermediate layer is discontinuous or differential
Description
図1は、光学パネル上に複数のエレクトロルミネセントデバイスを備える光源の略図である。
エレクトロルミネセントフィルムの選択領域上でのフィルム除去を容易にするため、連続ポリマーシート115の一部分を水、メタノール、エタノール、イソプロパノール、アセトン、トルエン、キシレン及びこれらの組合せの1種以上で溶媒和させる。連続ポリマーシート115の溶媒和部分をワイピングヘッド230でこすって1以上のフィルムの一部分を除去ることによって、フィルムをパターニングする。ワイピングヘッド230は、スポンジ、エラストマー、熱可塑性樹脂、熱硬化性樹脂、繊維マット、多孔質材料、ポリウレタンゴム、合成ゴム、天然ゴム、シリコーン、ポリジメチルシロキサン(PDMS)、テクスチャード材料及びこれらの組合せの1種以上からなる。
典型的な場合、エレクトロルミネセント層は、(i)非常に極性が高くて水のような水素結合溶媒にのみ溶解する(PEDOTのような)導電性ポリマー被膜、及び(ii)無極性であってトルエン又はキシレンのような無極性溶媒にのみ溶解する発光ポリマー被膜の両方を含んでいる。極端に異なる溶解特性を有する複数のポリマー被膜を1回のワイピングで除去するためには、各ポリマーに対する好適な溶媒を第三の溶媒中に分散させて均質な溶液を生成する。第三の溶媒(又は分散溶媒)は、特に限定されないが、アルコール(例えば、イソプロパノール、エタノール、メタノールなど)、ケトン(例えば、アセトン、メチルエチルケトンなど)、酢酸エステル、エーテル、塩化メチレン、又は中間の溶解度パラメーターを有する任意の溶媒のような多数の溶媒から選択される。典型的な発光プラスチック及びPEDOTに対する溶媒の評価を表1に示す。
実施例2:類似の溶解特性(即ち、中間の溶解度パラメーター)を有するポリマーからなる被膜の除去
良好な溶媒には、ポリマーフィルム(又は複数のポリマーフィルム)の溶解度パラメーターにぴったりと一致する溶解度パラメーターを有する一成分系、或いはポリマーの溶解度パラメーターに一致する実効溶解度パラメーターを有する多成分溶媒系がある。多成分系中の溶媒は、必ずしもポリマーに対して良好な溶媒である必要はない。例えば、CCl4もエタノールもポリメチルメタクリレート(PMMA)に対する良好な個別溶媒でないが、CCl4及びエタノールの二元混合物はPMMAに対する良好な溶媒である。これは、該混合物の実効溶解度パラメーターがPMMAのそれに一致するからである。
この実施例では、酸化インジウムスズ(ITO)で被覆したガラス基板上にPEDOT層をスピンコートし、200℃で1時間ベークする。次いで、発光プラスチックの層(即ち、エレクトロルミネセント層)をPEDOT層上にスピンコートする。エレクトロルミネセント層の一部分を除去するために使用する唯一の溶媒がキシレンである溶媒支援ワイピング(SAW)により、パターン化領域のワイピングを行う。
酸化インジウムスズ(ITO)で被覆したガラス基板上にPEDOT層をスピンコートし、200℃で1時間ベークする。発光プラスチックの層(又はエレクトロルミネセント層)をPEDOT層上にスピンコートする。PEDOT層及びエレクトロルミネセント層の両方を除去するために水、イソプロパノール及びキシレンからなる溶媒混合物を用いる溶媒支援ワイピング(SAW)により、パターン化領域のワイピングを行う。
Claims (4)
- 連続エレクトロルミネセントフィルム(410)の表面から1以上の被膜(420)を選択的に除去するための装置であって、当該装置が、
a)1以上の被膜(420)を有するエレクトロルミネセントフィルム(410)を供給する手段、
b)1以上の被膜(420)の一部分(460)を除去するためのワイピングヘッド(230)であって、上記1以上の被膜を溶媒和させる溶媒を含んでいて、接線方向(210)に沿って1以上の被膜(420)に接触するワイピングヘッド(230)、及び
c)該部分を除去した後に連続エレクトロルミネセントフィルム(410)を回収する手段
を備える装置。 - 前記溶媒が水、メタノール、エタノール、イソプロパノール、アセトン、トルエン、キシレン及びこれらの組合せからなる群から選択される、請求項1記載の装置。
- 前記ワイピングヘッドに溶媒を注入してワイピングヘッドを湿らせながらワイピングヘッドで前記1以上の被膜の一部分をこする、請求項1又は請求項2記載の装置。
- 前記ワイピングヘッドが、スポンジ、エラストマー、熱可塑性樹脂、熱硬化性樹脂、繊維マット、多孔質材料、ポリウレタンゴム、合成ゴム、天然ゴム、シリコーン、ポリジメチルシロキサン(PDMS)、テクスチャード材料及びこれらの組合せの1種以上からなる、請求項1乃至請求項3のいずれか1項記載の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US10/735,503 US20050129977A1 (en) | 2003-12-12 | 2003-12-12 | Method and apparatus for forming patterned coated films |
US10/735,503 | 2003-12-12 | ||
PCT/US2004/037014 WO2005062399A1 (en) | 2003-12-12 | 2004-11-08 | Method and apparatus for forming patterned coated films |
Publications (2)
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JP2007515756A JP2007515756A (ja) | 2007-06-14 |
JP4937757B2 true JP4937757B2 (ja) | 2012-05-23 |
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JP2006543818A Expired - Fee Related JP4937757B2 (ja) | 2003-12-12 | 2004-11-08 | パターン化被覆フィルムの形成方法及び装置 |
Country Status (9)
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US (2) | US20050129977A1 (ja) |
EP (1) | EP1695398B1 (ja) |
JP (1) | JP4937757B2 (ja) |
KR (1) | KR101392781B1 (ja) |
CN (1) | CN1902770B (ja) |
AT (1) | ATE447770T1 (ja) |
DE (1) | DE602004023966D1 (ja) |
SG (1) | SG149015A1 (ja) |
WO (1) | WO2005062399A1 (ja) |
Families Citing this family (17)
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DE202005002110U1 (de) * | 2004-02-19 | 2005-05-04 | Hong-Yuan Technology Co., Ltd., Yonghe | Lichtemittierende Vorrichtung |
US20070200489A1 (en) * | 2006-02-01 | 2007-08-30 | Poon Hak F | Large area organic electronic devices and methods of fabricating the same |
US20070215039A1 (en) * | 2006-03-14 | 2007-09-20 | Chuck Edwards | Roll-to-roll manufacturing of electronic and optical materials |
DE102007005089B3 (de) * | 2007-02-01 | 2008-09-25 | Leonhard Kurz Gmbh & Co. Kg | Verfahren zur Herstellung einer Solarzelle |
US20090149589A1 (en) * | 2007-12-05 | 2009-06-11 | College Of William And Mary | Method for generating surface-silvered polymer structures |
US20090186550A1 (en) * | 2008-01-21 | 2009-07-23 | General Electric Company | Methods, apparatus, and rollers for forming optoelectronic devices |
US7741140B2 (en) * | 2008-01-21 | 2010-06-22 | General Electric Company | Methods, apparatus, and rollers for cross-web forming of optoelectronic devices |
US20090214828A1 (en) * | 2008-02-26 | 2009-08-27 | Vicki Herzl Watkins | Blunt tip prism film and methods for making the same |
US8409672B2 (en) * | 2008-04-24 | 2013-04-02 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing evaporation donor substrate and method of manufacturing light-emitting device |
JP5212474B2 (ja) * | 2008-07-08 | 2013-06-19 | コニカミノルタホールディングス株式会社 | 有機エレクトロルミネッセンス素子の製造方法 |
US20110065282A1 (en) | 2009-09-11 | 2011-03-17 | General Electric Company | Apparatus and methods to form a patterned coating on an oled substrate |
US8137148B2 (en) * | 2009-09-30 | 2012-03-20 | General Electric Company | Method of manufacturing monolithic parallel interconnect structure |
JP4893839B2 (ja) * | 2010-03-29 | 2012-03-07 | 住友化学株式会社 | 発光装置の製造方法 |
GB201011280D0 (en) * | 2010-07-05 | 2010-08-18 | Cambridge Entpr Ltd | Patterning |
GB201011282D0 (en) | 2010-07-05 | 2010-08-18 | Cambridge Entpr Ltd | Patterning |
KR101434658B1 (ko) * | 2011-12-28 | 2014-08-29 | 코오롱인더스트리 주식회사 | 유기 태양전지의 제조 방법 |
KR20150102180A (ko) * | 2014-02-27 | 2015-09-07 | 삼성디스플레이 주식회사 | 레이저 빔 조사 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법 |
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2004
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- 2004-11-08 DE DE602004023966T patent/DE602004023966D1/de active Active
- 2004-11-08 WO PCT/US2004/037014 patent/WO2005062399A1/en active Application Filing
- 2004-11-08 AT AT04810440T patent/ATE447770T1/de not_active IP Right Cessation
- 2004-11-08 CN CN2004800403789A patent/CN1902770B/zh not_active Expired - Fee Related
- 2004-11-08 SG SG200809187-8A patent/SG149015A1/en unknown
- 2004-11-08 JP JP2006543818A patent/JP4937757B2/ja not_active Expired - Fee Related
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2006
- 2006-05-08 US US11/429,854 patent/US20060202612A1/en not_active Abandoned
- 2006-06-22 KR KR1020067012500A patent/KR101392781B1/ko not_active IP Right Cessation
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JP2001196167A (ja) * | 2000-01-07 | 2001-07-19 | Dainippon Printing Co Ltd | エレクトロルミネッセント基板およびエレクトロルミネッセント素子、ならびにそれらの製造方法 |
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Also Published As
Publication number | Publication date |
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CN1902770A (zh) | 2007-01-24 |
KR20060105789A (ko) | 2006-10-11 |
US20060202612A1 (en) | 2006-09-14 |
EP1695398B1 (en) | 2009-11-04 |
KR101392781B1 (ko) | 2014-05-09 |
SG149015A1 (en) | 2009-01-29 |
EP1695398A1 (en) | 2006-08-30 |
ATE447770T1 (de) | 2009-11-15 |
JP2007515756A (ja) | 2007-06-14 |
US20050129977A1 (en) | 2005-06-16 |
CN1902770B (zh) | 2010-10-13 |
DE602004023966D1 (de) | 2009-12-17 |
WO2005062399A1 (en) | 2005-07-07 |
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