JP4936928B2 - 成膜方法および成膜装置、ならびに記憶媒体 - Google Patents
成膜方法および成膜装置、ならびに記憶媒体 Download PDFInfo
- Publication number
- JP4936928B2 JP4936928B2 JP2007043910A JP2007043910A JP4936928B2 JP 4936928 B2 JP4936928 B2 JP 4936928B2 JP 2007043910 A JP2007043910 A JP 2007043910A JP 2007043910 A JP2007043910 A JP 2007043910A JP 4936928 B2 JP4936928 B2 JP 4936928B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- film
- substrate
- film forming
- carboxylate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 103
- 238000003860 storage Methods 0.000 title claims description 23
- 239000007789 gas Substances 0.000 claims description 286
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 187
- 239000010949 copper Substances 0.000 claims description 146
- HFDWIMBEIXDNQS-UHFFFAOYSA-L copper;diformate Chemical compound [Cu+2].[O-]C=O.[O-]C=O HFDWIMBEIXDNQS-UHFFFAOYSA-L 0.000 claims description 119
- 239000000758 substrate Substances 0.000 claims description 112
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 claims description 96
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 claims description 96
- 229940112669 cuprous oxide Drugs 0.000 claims description 96
- 235000019253 formic acid Nutrition 0.000 claims description 94
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 92
- 150000007942 carboxylates Chemical class 0.000 claims description 84
- 238000006243 chemical reaction Methods 0.000 claims description 78
- 229910052802 copper Inorganic materials 0.000 claims description 77
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 72
- 229910052760 oxygen Inorganic materials 0.000 claims description 70
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 69
- 239000001301 oxygen Substances 0.000 claims description 69
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 66
- 150000001732 carboxylic acid derivatives Chemical class 0.000 claims description 66
- 150000002736 metal compounds Chemical class 0.000 claims description 57
- 229910052751 metal Inorganic materials 0.000 claims description 55
- 239000002184 metal Substances 0.000 claims description 55
- 238000010438 heat treatment Methods 0.000 claims description 52
- BDAGIHXWWSANSR-UHFFFAOYSA-M Formate Chemical compound [O-]C=O BDAGIHXWWSANSR-UHFFFAOYSA-M 0.000 claims description 49
- 238000012545 processing Methods 0.000 claims description 43
- 229960004643 cupric oxide Drugs 0.000 claims description 39
- JJLJMEJHUUYSSY-UHFFFAOYSA-L Copper hydroxide Chemical compound [OH-].[OH-].[Cu+2] JJLJMEJHUUYSSY-UHFFFAOYSA-L 0.000 claims description 24
- 230000015572 biosynthetic process Effects 0.000 claims description 18
- 229910052709 silver Inorganic materials 0.000 claims description 14
- 239000005749 Copper compound Substances 0.000 claims description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 13
- 150000001880 copper compounds Chemical class 0.000 claims description 13
- 238000000151 deposition Methods 0.000 claims description 13
- 239000000843 powder Substances 0.000 claims description 13
- 239000004332 silver Substances 0.000 claims description 13
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 12
- 239000005751 Copper oxide Substances 0.000 claims description 12
- 229910000431 copper oxide Inorganic materials 0.000 claims description 12
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 11
- 230000007246 mechanism Effects 0.000 claims description 11
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 claims description 11
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 10
- 239000012528 membrane Substances 0.000 claims description 6
- 235000019260 propionic acid Nutrition 0.000 claims description 5
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 claims description 5
- 229940005605 valeric acid Drugs 0.000 claims description 5
- 239000011247 coating layer Substances 0.000 claims description 4
- 235000011054 acetic acid Nutrition 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 150000003839 salts Chemical class 0.000 claims description 3
- 150000001734 carboxylic acid salts Chemical class 0.000 claims description 2
- 239000002344 surface layer Substances 0.000 claims description 2
- 150000001735 carboxylic acids Chemical class 0.000 claims 1
- 239000010408 film Substances 0.000 description 233
- 235000012431 wafers Nutrition 0.000 description 149
- 239000002994 raw material Substances 0.000 description 32
- 230000008569 process Effects 0.000 description 28
- 238000012546 transfer Methods 0.000 description 22
- 238000000137 annealing Methods 0.000 description 15
- 238000001816 cooling Methods 0.000 description 15
- 238000009792 diffusion process Methods 0.000 description 13
- 238000011068 loading method Methods 0.000 description 12
- 238000001179 sorption measurement Methods 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 10
- 239000007787 solid Substances 0.000 description 10
- 239000002243 precursor Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000002441 X-ray diffraction Methods 0.000 description 8
- 210000002381 plasma Anatomy 0.000 description 8
- 239000012535 impurity Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 5
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000003507 refrigerant Substances 0.000 description 5
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000006227 byproduct Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- OTCVAHKKMMUFAY-UHFFFAOYSA-N oxosilver Chemical compound [Ag]=O OTCVAHKKMMUFAY-UHFFFAOYSA-N 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- 241000894007 species Species 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000005750 Copper hydroxide Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 2
- -1 carboxylate salt Chemical class 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910001956 copper hydroxide Inorganic materials 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 229910000000 metal hydroxide Inorganic materials 0.000 description 2
- 150000004692 metal hydroxides Chemical class 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000013110 organic ligand Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 239000006200 vaporizer Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 241000255925 Diptera Species 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- TZNFGOYNQQEGJT-UHFFFAOYSA-L copper;diformate;dihydrate Chemical compound O.O.[Cu+2].[O-]C=O.[O-]C=O TZNFGOYNQQEGJT-UHFFFAOYSA-L 0.000 description 1
- BJYLNGGDLHKELP-UHFFFAOYSA-N copper;formic acid Chemical compound [Cu].OC=O BJYLNGGDLHKELP-UHFFFAOYSA-N 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- VFWRGKJLLYDFBY-UHFFFAOYSA-N silver;hydrate Chemical compound O.[Ag].[Ag] VFWRGKJLLYDFBY-UHFFFAOYSA-N 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007043910A JP4936928B2 (ja) | 2006-05-16 | 2007-02-23 | 成膜方法および成膜装置、ならびに記憶媒体 |
| US11/747,647 US8029856B2 (en) | 2006-05-16 | 2007-05-11 | Film formation method and apparatus |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006136657 | 2006-05-16 | ||
| JP2006136657 | 2006-05-16 | ||
| JP2007043910A JP4936928B2 (ja) | 2006-05-16 | 2007-02-23 | 成膜方法および成膜装置、ならびに記憶媒体 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012019498A Division JP5436589B2 (ja) | 2006-05-16 | 2012-02-01 | 成膜装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007332453A JP2007332453A (ja) | 2007-12-27 |
| JP2007332453A5 JP2007332453A5 (OSRAM) | 2010-03-18 |
| JP4936928B2 true JP4936928B2 (ja) | 2012-05-23 |
Family
ID=38875285
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007043910A Expired - Fee Related JP4936928B2 (ja) | 2006-05-16 | 2007-02-23 | 成膜方法および成膜装置、ならびに記憶媒体 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8029856B2 (OSRAM) |
| JP (1) | JP4936928B2 (OSRAM) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4964097B2 (ja) * | 2007-11-15 | 2012-06-27 | 東京エレクトロン株式会社 | 成膜方法および成膜装置、ならびに記憶媒体 |
| JP5145052B2 (ja) | 2008-01-07 | 2013-02-13 | 東京エレクトロン株式会社 | 成膜方法および成膜装置、ならびに記憶媒体 |
| WO2009148959A2 (en) | 2008-05-29 | 2009-12-10 | Lawrence Livermore National Security, Llc | Membranes with functionalized carbon nanotube pores for selective transport |
| JP5281856B2 (ja) * | 2008-09-16 | 2013-09-04 | 東京エレクトロン株式会社 | 成膜方法および成膜装置、ならびに記憶媒体 |
| CN101768730B (zh) * | 2009-01-05 | 2013-06-05 | 鸿富锦精密工业（深圳）有限公司 | 一种薄膜制备装置 |
| SG10201405419XA (en) * | 2009-09-16 | 2014-10-30 | Hitachi Chemical Co Ltd | Copper metal film, method for producing same, copper metal pattern, conductive wiring line using the copper metal pattern, copper metal bump, heat conduction path, bonding material, and liquid composition |
| KR101651932B1 (ko) * | 2009-10-26 | 2016-08-30 | 한화케미칼 주식회사 | 카르복실산을 이용한 전도성 금속 박막의 제조방법 |
| US11439708B2 (en) | 2014-10-06 | 2022-09-13 | Lawrence Livermore National Security, Llc | Nanotube trans-membrane channels mimicking biological porins |
| US10541137B2 (en) * | 2018-06-01 | 2020-01-21 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for non line-of-sight doping |
| KR102138149B1 (ko) * | 2019-08-29 | 2020-07-27 | 솔브레인 주식회사 | 박막 형성용 성장 억제제, 이를 이용한 박막 형성 방법 및 이로부터 제조된 반도체 기판 |
| US12311053B2 (en) | 2019-12-13 | 2025-05-27 | Lawrence Livermore National Security, Llc | Nanotube-vesicle compositions and uses thereof |
| CN116261606A (zh) * | 2020-08-25 | 2023-06-13 | 周星工程股份有限公司 | 基板处理设备 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2745677B2 (ja) | 1989-05-18 | 1998-04-28 | 三菱瓦斯化学株式会社 | 銅張基板の製造法 |
| KR0137370B1 (ko) * | 1988-11-07 | 1998-04-27 | 니시가와 레이치 | 구리 도금된 수지 제품의 제조방법 |
| US6232150B1 (en) * | 1998-12-03 | 2001-05-15 | The Regents Of The University Of Michigan | Process for making microstructures and microstructures made thereby |
| US6475277B1 (en) * | 1999-06-30 | 2002-11-05 | Sumitomo Electric Industries, Ltd. | Group III-V nitride semiconductor growth method and vapor phase growth apparatus |
| US7629017B2 (en) * | 2001-10-05 | 2009-12-08 | Cabot Corporation | Methods for the deposition of conductive electronic features |
| JP3771882B2 (ja) | 2002-04-30 | 2006-04-26 | 三菱重工業株式会社 | 金属膜作製装置及び金属膜作製方法 |
| US7522822B2 (en) * | 2004-01-06 | 2009-04-21 | Robert Trujillo | Halogen lamp assembly with integrated heat sink |
| JP4590402B2 (ja) * | 2004-04-30 | 2010-12-01 | 株式会社荏原製作所 | 基板の処理装置 |
| JP2007332422A (ja) * | 2006-06-15 | 2007-12-27 | Ebara Corp | 成膜方法及び成膜装置 |
-
2007
- 2007-02-23 JP JP2007043910A patent/JP4936928B2/ja not_active Expired - Fee Related
- 2007-05-11 US US11/747,647 patent/US8029856B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007332453A (ja) | 2007-12-27 |
| US20080000416A1 (en) | 2008-01-03 |
| US8029856B2 (en) | 2011-10-04 |
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