JP4933718B2 - 面発光半導体レーザチップおよびその製造方法 - Google Patents

面発光半導体レーザチップおよびその製造方法 Download PDF

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Publication number
JP4933718B2
JP4933718B2 JP2003204627A JP2003204627A JP4933718B2 JP 4933718 B2 JP4933718 B2 JP 4933718B2 JP 2003204627 A JP2003204627 A JP 2003204627A JP 2003204627 A JP2003204627 A JP 2003204627A JP 4933718 B2 JP4933718 B2 JP 4933718B2
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Japan
Prior art keywords
semiconductor
semiconductor laser
laser chip
substrate
manufacturing
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JP2003204627A
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English (en)
Japanese (ja)
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JP2004072098A (ja
Inventor
プラス ヴェルナー
ユング クリスティアン
アルブレヒト トニー
シュトレラー ウードー
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2003204627A 2002-07-31 2003-07-31 面発光半導体レーザチップおよびその製造方法 Expired - Lifetime JP4933718B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10234976.2 2002-07-31
DE10234976A DE10234976B4 (de) 2002-07-31 2002-07-31 Oberflächenemittierender Halbleiterlaserchip und Verfahren zu dessen Herstellung

Related Child Applications (1)

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JP2010293095A Division JP2011066457A (ja) 2002-07-31 2010-12-28 面発光半導体レーザチップおよびその製造方法

Publications (2)

Publication Number Publication Date
JP2004072098A JP2004072098A (ja) 2004-03-04
JP4933718B2 true JP4933718B2 (ja) 2012-05-16

Family

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JP2003204627A Expired - Lifetime JP4933718B2 (ja) 2002-07-31 2003-07-31 面発光半導体レーザチップおよびその製造方法
JP2010293095A Pending JP2011066457A (ja) 2002-07-31 2010-12-28 面発光半導体レーザチップおよびその製造方法

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JP2010293095A Pending JP2011066457A (ja) 2002-07-31 2010-12-28 面発光半導体レーザチップおよびその製造方法

Country Status (4)

Country Link
US (1) US7521723B2 (enExample)
JP (2) JP4933718B2 (enExample)
DE (1) DE10234976B4 (enExample)
TW (1) TWI224409B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005049830A (ja) * 2003-07-14 2005-02-24 Fuji Photo Film Co Ltd 光信号伝送システム
DE102006024220A1 (de) 2006-04-13 2007-10-18 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
FR3061605B1 (fr) * 2016-12-29 2019-05-31 Aledia Dispositif optoélectronique à diodes électroluminescentes

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3901738A (en) * 1973-12-20 1975-08-26 Hughes Aircraft Co Ion implanted junction laser and process for making same
US4990465A (en) * 1985-01-22 1991-02-05 Massachusetts Institute Of Technology Method of forming a surface emitting laser
JPH04348579A (ja) * 1991-05-27 1992-12-03 Seiko Epson Corp 半導体装置
JP2674382B2 (ja) * 1991-08-21 1997-11-12 日本電気株式会社 半導体レーザ
JP3123136B2 (ja) * 1991-08-26 2001-01-09 日本電気株式会社 面発光型半導体レーザとそのアレー及び面発光型発光ダイオードとそのアレー及び面発光型ｐｎｐｎ素子
JPH0856017A (ja) * 1994-08-09 1996-02-27 Omron Corp 半導体素子及びその製造方法、並びに半導体素子製作用マスク
JPH0864901A (ja) * 1994-08-24 1996-03-08 Hitachi Ltd 半導体レーザダイオードの構造
JP2601218B2 (ja) * 1994-10-13 1997-04-16 日本電気株式会社 面発光レーザ
US5778018A (en) * 1994-10-13 1998-07-07 Nec Corporation VCSELs (vertical-cavity surface emitting lasers) and VCSEL-based devices
JPH104240A (ja) * 1996-06-17 1998-01-06 Furukawa Electric Co Ltd:The 半導体光素子、ウエハ及びその製造方法
JP3791193B2 (ja) * 1998-07-17 2006-06-28 富士ゼロックス株式会社 面発光レーザ素子及び面発光レーザ素子アレイ
US20020109148A1 (en) * 1998-12-29 2002-08-15 Shveykin Vasily I. Injection incoherent emitter
JP4010095B2 (ja) * 1999-10-01 2007-11-21 富士ゼロックス株式会社 面発光型半導体レーザ及びレーザアレイ
DE10006738C2 (de) * 2000-02-15 2002-01-17 Osram Opto Semiconductors Gmbh Lichtemittierendes Bauelement mit verbesserter Lichtauskopplung und Verfahren zu seiner Herstellung
JP4029538B2 (ja) * 2000-03-01 2008-01-09 富士ゼロックス株式会社 半導体レーザ、光ヘッド、光ディスク装置、および半導体レーザの製造方法
JP3770305B2 (ja) * 2000-03-29 2006-04-26 セイコーエプソン株式会社 面発光型半導体レーザおよびその製造方法
DE10038235A1 (de) * 2000-08-04 2002-02-21 Osram Opto Semiconductors Gmbh Oberflächenemittierender Laser mit seitlicher Strominjektion
DE10054966A1 (de) * 2000-11-06 2002-05-16 Osram Opto Semiconductors Gmbh Bauelement für die Optoelektronik
KR100395492B1 (ko) * 2000-12-30 2003-08-25 한국전자통신연구원 레이저 소자
GB2377318A (en) * 2001-07-03 2003-01-08 Mitel Semiconductor Ab Vertical Cavity Surface Emitting Laser
US6924511B2 (en) * 2002-01-03 2005-08-02 Arima Optoelectronics Corp. Vertical cavity surface emitting semiconductor laser with triangle prism optical cavity resonator
US20030152125A1 (en) * 2002-02-13 2003-08-14 Junichi Kinoshita Surface emitting laser and semiconductor light emitting device
US7173285B2 (en) * 2004-03-18 2007-02-06 Cree, Inc. Lithographic methods to reduce stacking fault nucleation sites

Also Published As

Publication number Publication date
US7521723B2 (en) 2009-04-21
TWI224409B (en) 2004-11-21
JP2011066457A (ja) 2011-03-31
JP2004072098A (ja) 2004-03-04
US20050098788A1 (en) 2005-05-12
DE10234976A1 (de) 2004-02-12
TW200403907A (en) 2004-03-01
DE10234976B4 (de) 2012-05-03

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