DE10234976B4 - Oberflächenemittierender Halbleiterlaserchip und Verfahren zu dessen Herstellung - Google Patents

Oberflächenemittierender Halbleiterlaserchip und Verfahren zu dessen Herstellung Download PDF

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Publication number
DE10234976B4
DE10234976B4 DE10234976A DE10234976A DE10234976B4 DE 10234976 B4 DE10234976 B4 DE 10234976B4 DE 10234976 A DE10234976 A DE 10234976A DE 10234976 A DE10234976 A DE 10234976A DE 10234976 B4 DE10234976 B4 DE 10234976B4
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DE
Germany
Prior art keywords
semiconductor
laser chip
semiconductor laser
wafer
directions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE10234976A
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German (de)
English (en)
Other versions
DE10234976A1 (de
Inventor
Dr. Streller Udo
Werner Plass
Dr. Jung Christian
Tony Albrecht
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Priority to DE10234976A priority Critical patent/DE10234976B4/de
Priority to TW092120645A priority patent/TWI224409B/zh
Priority to JP2003204627A priority patent/JP4933718B2/ja
Priority to US10/631,384 priority patent/US7521723B2/en
Publication of DE10234976A1 publication Critical patent/DE10234976A1/de
Priority to JP2010293095A priority patent/JP2011066457A/ja
Application granted granted Critical
Publication of DE10234976B4 publication Critical patent/DE10234976B4/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE10234976A 2002-07-31 2002-07-31 Oberflächenemittierender Halbleiterlaserchip und Verfahren zu dessen Herstellung Expired - Lifetime DE10234976B4 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
DE10234976A DE10234976B4 (de) 2002-07-31 2002-07-31 Oberflächenemittierender Halbleiterlaserchip und Verfahren zu dessen Herstellung
TW092120645A TWI224409B (en) 2002-07-31 2003-07-29 Surface-emitting semiconductor-laser-chip and its production method
JP2003204627A JP4933718B2 (ja) 2002-07-31 2003-07-31 面発光半導体レーザチップおよびその製造方法
US10/631,384 US7521723B2 (en) 2002-07-31 2003-07-31 Surface emitting semiconductor laser chip and method for producing the chip
JP2010293095A JP2011066457A (ja) 2002-07-31 2010-12-28 面発光半導体レーザチップおよびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10234976A DE10234976B4 (de) 2002-07-31 2002-07-31 Oberflächenemittierender Halbleiterlaserchip und Verfahren zu dessen Herstellung

Publications (2)

Publication Number Publication Date
DE10234976A1 DE10234976A1 (de) 2004-02-12
DE10234976B4 true DE10234976B4 (de) 2012-05-03

Family

ID=30128567

Family Applications (1)

Application Number Title Priority Date Filing Date
DE10234976A Expired - Lifetime DE10234976B4 (de) 2002-07-31 2002-07-31 Oberflächenemittierender Halbleiterlaserchip und Verfahren zu dessen Herstellung

Country Status (4)

Country Link
US (1) US7521723B2 (enExample)
JP (2) JP4933718B2 (enExample)
DE (1) DE10234976B4 (enExample)
TW (1) TWI224409B (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005049830A (ja) * 2003-07-14 2005-02-24 Fuji Photo Film Co Ltd 光信号伝送システム
DE102006024220A1 (de) 2006-04-13 2007-10-18 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
FR3061605B1 (fr) * 2016-12-29 2019-05-31 Aledia Dispositif optoélectronique à diodes électroluminescentes

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6154479A (en) * 1994-10-13 2000-11-28 Nec Corporation VCSELs (vertical-cavity surface emitting lasers) and VCSEL-based devices
DE10038235A1 (de) * 2000-08-04 2002-02-21 Osram Opto Semiconductors Gmbh Oberflächenemittierender Laser mit seitlicher Strominjektion

Family Cites Families (21)

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Publication number Priority date Publication date Assignee Title
US3901738A (en) * 1973-12-20 1975-08-26 Hughes Aircraft Co Ion implanted junction laser and process for making same
US4990465A (en) * 1985-01-22 1991-02-05 Massachusetts Institute Of Technology Method of forming a surface emitting laser
JPH04348579A (ja) * 1991-05-27 1992-12-03 Seiko Epson Corp 半導体装置
JP2674382B2 (ja) * 1991-08-21 1997-11-12 日本電気株式会社 半導体レーザ
JP3123136B2 (ja) * 1991-08-26 2001-01-09 日本電気株式会社 面発光型半導体レーザとそのアレー及び面発光型発光ダイオードとそのアレー及び面発光型ｐｎｐｎ素子
JPH0856017A (ja) * 1994-08-09 1996-02-27 Omron Corp 半導体素子及びその製造方法、並びに半導体素子製作用マスク
JPH0864901A (ja) * 1994-08-24 1996-03-08 Hitachi Ltd 半導体レーザダイオードの構造
JP2601218B2 (ja) * 1994-10-13 1997-04-16 日本電気株式会社 面発光レーザ
JPH104240A (ja) * 1996-06-17 1998-01-06 Furukawa Electric Co Ltd:The 半導体光素子、ウエハ及びその製造方法
JP3791193B2 (ja) * 1998-07-17 2006-06-28 富士ゼロックス株式会社 面発光レーザ素子及び面発光レーザ素子アレイ
US20020109148A1 (en) * 1998-12-29 2002-08-15 Shveykin Vasily I. Injection incoherent emitter
JP4010095B2 (ja) * 1999-10-01 2007-11-21 富士ゼロックス株式会社 面発光型半導体レーザ及びレーザアレイ
DE10006738C2 (de) * 2000-02-15 2002-01-17 Osram Opto Semiconductors Gmbh Lichtemittierendes Bauelement mit verbesserter Lichtauskopplung und Verfahren zu seiner Herstellung
JP4029538B2 (ja) * 2000-03-01 2008-01-09 富士ゼロックス株式会社 半導体レーザ、光ヘッド、光ディスク装置、および半導体レーザの製造方法
JP3770305B2 (ja) * 2000-03-29 2006-04-26 セイコーエプソン株式会社 面発光型半導体レーザおよびその製造方法
DE10054966A1 (de) * 2000-11-06 2002-05-16 Osram Opto Semiconductors Gmbh Bauelement für die Optoelektronik
KR100395492B1 (ko) * 2000-12-30 2003-08-25 한국전자통신연구원 레이저 소자
GB2377318A (en) * 2001-07-03 2003-01-08 Mitel Semiconductor Ab Vertical Cavity Surface Emitting Laser
US6924511B2 (en) * 2002-01-03 2005-08-02 Arima Optoelectronics Corp. Vertical cavity surface emitting semiconductor laser with triangle prism optical cavity resonator
US20030152125A1 (en) * 2002-02-13 2003-08-14 Junichi Kinoshita Surface emitting laser and semiconductor light emitting device
US7173285B2 (en) * 2004-03-18 2007-02-06 Cree, Inc. Lithographic methods to reduce stacking fault nucleation sites

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6154479A (en) * 1994-10-13 2000-11-28 Nec Corporation VCSELs (vertical-cavity surface emitting lasers) and VCSEL-based devices
DE10038235A1 (de) * 2000-08-04 2002-02-21 Osram Opto Semiconductors Gmbh Oberflächenemittierender Laser mit seitlicher Strominjektion

Also Published As

Publication number Publication date
US7521723B2 (en) 2009-04-21
TWI224409B (en) 2004-11-21
JP2011066457A (ja) 2011-03-31
JP2004072098A (ja) 2004-03-04
US20050098788A1 (en) 2005-05-12
DE10234976A1 (de) 2004-02-12
JP4933718B2 (ja) 2012-05-16
TW200403907A (en) 2004-03-01

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Effective date: 20120804

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