TWI224409B - Surface-emitting semiconductor-laser-chip and its production method - Google Patents

Surface-emitting semiconductor-laser-chip and its production method Download PDF

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Publication number
TWI224409B
TWI224409B TW092120645A TW92120645A TWI224409B TW I224409 B TWI224409 B TW I224409B TW 092120645 A TW092120645 A TW 092120645A TW 92120645 A TW92120645 A TW 92120645A TW I224409 B TWI224409 B TW I224409B
Authority
TW
Taiwan
Prior art keywords
semiconductor
semiconductor laser
crystal
wafer
laser chip
Prior art date
Application number
TW092120645A
Other languages
English (en)
Chinese (zh)
Other versions
TW200403907A (en
Inventor
Werner Plass
Christian Jung
Tony Albrecht
Udo Streller
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of TW200403907A publication Critical patent/TW200403907A/zh
Application granted granted Critical
Publication of TWI224409B publication Critical patent/TWI224409B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
TW092120645A 2002-07-31 2003-07-29 Surface-emitting semiconductor-laser-chip and its production method TWI224409B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE10234976A DE10234976B4 (de) 2002-07-31 2002-07-31 Oberflächenemittierender Halbleiterlaserchip und Verfahren zu dessen Herstellung

Publications (2)

Publication Number Publication Date
TW200403907A TW200403907A (en) 2004-03-01
TWI224409B true TWI224409B (en) 2004-11-21

Family

ID=30128567

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092120645A TWI224409B (en) 2002-07-31 2003-07-29 Surface-emitting semiconductor-laser-chip and its production method

Country Status (4)

Country Link
US (1) US7521723B2 (enExample)
JP (2) JP4933718B2 (enExample)
DE (1) DE10234976B4 (enExample)
TW (1) TWI224409B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8351479B2 (en) 2006-04-13 2013-01-08 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor element

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005049830A (ja) * 2003-07-14 2005-02-24 Fuji Photo Film Co Ltd 光信号伝送システム
FR3061605B1 (fr) * 2016-12-29 2019-05-31 Aledia Dispositif optoélectronique à diodes électroluminescentes

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US3901738A (en) * 1973-12-20 1975-08-26 Hughes Aircraft Co Ion implanted junction laser and process for making same
US4990465A (en) * 1985-01-22 1991-02-05 Massachusetts Institute Of Technology Method of forming a surface emitting laser
JPH04348579A (ja) * 1991-05-27 1992-12-03 Seiko Epson Corp 半導体装置
JP2674382B2 (ja) * 1991-08-21 1997-11-12 日本電気株式会社 半導体レーザ
JP3123136B2 (ja) * 1991-08-26 2001-01-09 日本電気株式会社 面発光型半導体レーザとそのアレー及び面発光型発光ダイオードとそのアレー及び面発光型ｐｎｐｎ素子
JPH0856017A (ja) * 1994-08-09 1996-02-27 Omron Corp 半導体素子及びその製造方法、並びに半導体素子製作用マスク
JPH0864901A (ja) * 1994-08-24 1996-03-08 Hitachi Ltd 半導体レーザダイオードの構造
JP2601218B2 (ja) * 1994-10-13 1997-04-16 日本電気株式会社 面発光レーザ
US5778018A (en) * 1994-10-13 1998-07-07 Nec Corporation VCSELs (vertical-cavity surface emitting lasers) and VCSEL-based devices
JPH104240A (ja) * 1996-06-17 1998-01-06 Furukawa Electric Co Ltd:The 半導体光素子、ウエハ及びその製造方法
JP3791193B2 (ja) * 1998-07-17 2006-06-28 富士ゼロックス株式会社 面発光レーザ素子及び面発光レーザ素子アレイ
US20020109148A1 (en) * 1998-12-29 2002-08-15 Shveykin Vasily I. Injection incoherent emitter
JP4010095B2 (ja) * 1999-10-01 2007-11-21 富士ゼロックス株式会社 面発光型半導体レーザ及びレーザアレイ
DE10006738C2 (de) * 2000-02-15 2002-01-17 Osram Opto Semiconductors Gmbh Lichtemittierendes Bauelement mit verbesserter Lichtauskopplung und Verfahren zu seiner Herstellung
JP4029538B2 (ja) * 2000-03-01 2008-01-09 富士ゼロックス株式会社 半導体レーザ、光ヘッド、光ディスク装置、および半導体レーザの製造方法
JP3770305B2 (ja) * 2000-03-29 2006-04-26 セイコーエプソン株式会社 面発光型半導体レーザおよびその製造方法
DE10038235A1 (de) * 2000-08-04 2002-02-21 Osram Opto Semiconductors Gmbh Oberflächenemittierender Laser mit seitlicher Strominjektion
DE10054966A1 (de) * 2000-11-06 2002-05-16 Osram Opto Semiconductors Gmbh Bauelement für die Optoelektronik
KR100395492B1 (ko) * 2000-12-30 2003-08-25 한국전자통신연구원 레이저 소자
GB2377318A (en) * 2001-07-03 2003-01-08 Mitel Semiconductor Ab Vertical Cavity Surface Emitting Laser
US6924511B2 (en) * 2002-01-03 2005-08-02 Arima Optoelectronics Corp. Vertical cavity surface emitting semiconductor laser with triangle prism optical cavity resonator
US20030152125A1 (en) * 2002-02-13 2003-08-14 Junichi Kinoshita Surface emitting laser and semiconductor light emitting device
US7173285B2 (en) * 2004-03-18 2007-02-06 Cree, Inc. Lithographic methods to reduce stacking fault nucleation sites

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8351479B2 (en) 2006-04-13 2013-01-08 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor element

Also Published As

Publication number Publication date
US7521723B2 (en) 2009-04-21
JP2011066457A (ja) 2011-03-31
JP2004072098A (ja) 2004-03-04
US20050098788A1 (en) 2005-05-12
DE10234976A1 (de) 2004-02-12
JP4933718B2 (ja) 2012-05-16
TW200403907A (en) 2004-03-01
DE10234976B4 (de) 2012-05-03

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