JP4926067B2 - ガスクラスターイオンビーム形成のためのイオナイザおよび方法 - Google Patents

ガスクラスターイオンビーム形成のためのイオナイザおよび方法 Download PDF

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Publication number
JP4926067B2
JP4926067B2 JP2007538189A JP2007538189A JP4926067B2 JP 4926067 B2 JP4926067 B2 JP 4926067B2 JP 2007538189 A JP2007538189 A JP 2007538189A JP 2007538189 A JP2007538189 A JP 2007538189A JP 4926067 B2 JP4926067 B2 JP 4926067B2
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Prior art keywords
gas cluster
gas
ionizer
plasma
ionization region
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Japanese (ja)
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JP2008518407A5 (enExample
JP2008518407A (ja
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マック，マイケル，イー．
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ティーイーエル エピオン インク．
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/08—Ion sources; Ion guns using arc discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/026—Cluster ion sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/08—Ion sources
    • H01J2237/0812—Ionized cluster beam [ICB] sources

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Combustion & Propulsion (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Electron Sources, Ion Sources (AREA)
JP2007538189A 2004-10-25 2005-10-25 ガスクラスターイオンビーム形成のためのイオナイザおよび方法 Expired - Fee Related JP4926067B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US62191304P 2004-10-25 2004-10-25
US60/621,913 2004-10-25
PCT/US2005/038600 WO2006047609A2 (en) 2004-10-25 2005-10-25 Ionizer and method for gas-cluster ion-beam formation

Publications (3)

Publication Number Publication Date
JP2008518407A JP2008518407A (ja) 2008-05-29
JP2008518407A5 JP2008518407A5 (enExample) 2011-08-18
JP4926067B2 true JP4926067B2 (ja) 2012-05-09

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007538189A Expired - Fee Related JP4926067B2 (ja) 2004-10-25 2005-10-25 ガスクラスターイオンビーム形成のためのイオナイザおよび方法

Country Status (4)

Country Link
US (1) US7173252B2 (enExample)
EP (1) EP1807859A2 (enExample)
JP (1) JP4926067B2 (enExample)
WO (1) WO2006047609A2 (enExample)

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US20110084214A1 (en) * 2009-10-08 2011-04-14 Tel Epion Inc. Gas cluster ion beam processing method for preparing an isolation layer in non-planar gate structures
US8048788B2 (en) * 2009-10-08 2011-11-01 Tel Epion Inc. Method for treating non-planar structures using gas cluster ion beam processing
US8237136B2 (en) * 2009-10-08 2012-08-07 Tel Epion Inc. Method and system for tilting a substrate during gas cluster ion beam processing
US8187971B2 (en) 2009-11-16 2012-05-29 Tel Epion Inc. Method to alter silicide properties using GCIB treatment
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WO2011089912A1 (ja) * 2010-01-25 2011-07-28 株式会社日立ハイテクノロジーズ 質量分析装置
EP2539942B1 (de) * 2010-02-22 2016-09-14 Oc3 Ag Verfahren zur herstellung einer halbleiterschicht
US20110240602A1 (en) * 2010-03-30 2011-10-06 Tel Epion Inc. High-voltage gas cluster ion beam (gcib) processing system
US8173980B2 (en) 2010-05-05 2012-05-08 Tel Epion Inc. Gas cluster ion beam system with cleaning apparatus
US8338806B2 (en) 2010-05-05 2012-12-25 Tel Epion Inc. Gas cluster ion beam system with rapid gas switching apparatus
US8481340B2 (en) 2010-06-16 2013-07-09 Tel Epion Inc. Method for preparing a light-emitting device using gas cluster ion beam processing
US10670960B2 (en) * 2010-08-23 2020-06-02 Exogenesis Corporation Enhanced high aspect ratio etch performance using accelerated neutral beams derived from gas-cluster ion beams
US10825685B2 (en) 2010-08-23 2020-11-03 Exogenesis Corporation Method for neutral beam processing based on gas cluster ion beam technology and articles produced thereby
US11199769B2 (en) 2010-08-23 2021-12-14 Exogenesis Corporation Method and apparatus for neutral beam processing based on gas cluster ion beam technology
US9799488B2 (en) * 2010-08-23 2017-10-24 Exogenesis Corporation Method and apparatus for neutral beam processing based on gas cluster ion beam technology
US10202684B2 (en) * 2010-08-23 2019-02-12 Exogenesis Corporation Method for neutral beam processing based on gas cluster ion beam technology and articles produced thereby
US20170303383A1 (en) * 2010-08-23 2017-10-19 Exogenesis Corporation Method for neutral beam processing based on gas cluster ion beam technology and articles produced thereby
EP2608872B1 (en) * 2010-08-23 2019-07-31 Exogenesis Corporation Method and apparatus for neutral beam processing based on gas cluster ion beam technology
US10181402B2 (en) 2010-08-23 2019-01-15 Exogenesis Corporation Method and apparatus for neutral beam processing based on gas cluster ion beam technology and articles produced thereby
US9159542B2 (en) * 2010-12-14 2015-10-13 Thermo Finnigan Llc Apparatus and method for inhibiting ionization source filament failure
US8440578B2 (en) 2011-03-28 2013-05-14 Tel Epion Inc. GCIB process for reducing interfacial roughness following pre-amorphization
US8633452B2 (en) * 2011-07-13 2014-01-21 Fei Company Methods and structures for rapid switching between different process gases in an inductively-coupled plasma (ICP) ion source
US10556042B2 (en) 2011-08-19 2020-02-11 Exogenesis Corporation Drug delivery system and method of manufacturing thereof
CA2845762C (en) 2011-08-22 2019-01-08 Exogenesis Corporation Drug delivery system and method of manufacturing thereof
JP2014525817A (ja) 2011-08-22 2014-10-02 エクソジェネシス コーポレーション 物体表面の生物活性特徴の向上方法ならびにそれにより向上された表面
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US8728947B2 (en) 2012-06-08 2014-05-20 Tel Epion Inc. Gas cluster ion beam process for opening conformal layer in a high aspect ratio contact via
US8722542B2 (en) 2012-06-08 2014-05-13 Tel Epion Inc. Gas cluster ion beam process for opening conformal layer in a high aspect ratio contact via
US8546209B1 (en) 2012-06-15 2013-10-01 International Business Machines Corporation Replacement metal gate processing with reduced interlevel dielectric layer etch rate
TWI517463B (zh) * 2012-11-20 2016-01-11 佳能安內華股份有限公司 磁阻效應元件之製造方法
EP2959502A4 (en) * 2013-02-25 2016-11-09 Exogenesis Corp DEFECT REDUCTION IN A SUBSTRATE TREATMENT PROCESS
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Also Published As

Publication number Publication date
JP2008518407A (ja) 2008-05-29
US20060097185A1 (en) 2006-05-11
WO2006047609A8 (en) 2007-06-28
WO2006047609A3 (en) 2007-03-01
WO2006047609A2 (en) 2006-05-04
EP1807859A2 (en) 2007-07-18
US7173252B2 (en) 2007-02-06

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