JP2008518407A5 - - Google Patents

Download PDF

Info

Publication number
JP2008518407A5
JP2008518407A5 JP2007538189A JP2007538189A JP2008518407A5 JP 2008518407 A5 JP2008518407 A5 JP 2008518407A5 JP 2007538189 A JP2007538189 A JP 2007538189A JP 2007538189 A JP2007538189 A JP 2007538189A JP 2008518407 A5 JP2008518407 A5 JP 2008518407A5
Authority
JP
Japan
Prior art keywords
ionizer
gas cluster
gas
ionization region
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007538189A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008518407A (ja
JP4926067B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2005/038600 external-priority patent/WO2006047609A2/en
Publication of JP2008518407A publication Critical patent/JP2008518407A/ja
Publication of JP2008518407A5 publication Critical patent/JP2008518407A5/ja
Application granted granted Critical
Publication of JP4926067B2 publication Critical patent/JP4926067B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2007538189A 2004-10-25 2005-10-25 ガスクラスターイオンビーム形成のためのイオナイザおよび方法 Expired - Fee Related JP4926067B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US62191304P 2004-10-25 2004-10-25
US60/621,913 2004-10-25
PCT/US2005/038600 WO2006047609A2 (en) 2004-10-25 2005-10-25 Ionizer and method for gas-cluster ion-beam formation

Publications (3)

Publication Number Publication Date
JP2008518407A JP2008518407A (ja) 2008-05-29
JP2008518407A5 true JP2008518407A5 (enExample) 2011-08-18
JP4926067B2 JP4926067B2 (ja) 2012-05-09

Family

ID=36228430

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007538189A Expired - Fee Related JP4926067B2 (ja) 2004-10-25 2005-10-25 ガスクラスターイオンビーム形成のためのイオナイザおよび方法

Country Status (4)

Country Link
US (1) US7173252B2 (enExample)
EP (1) EP1807859A2 (enExample)
JP (1) JP4926067B2 (enExample)
WO (1) WO2006047609A2 (enExample)

Families Citing this family (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7791047B2 (en) * 2003-12-12 2010-09-07 Semequip, Inc. Method and apparatus for extracting ions from an ion source for use in ion implantation
EP1807859A2 (en) * 2004-10-25 2007-07-18 TEL Epion Inc. Ionizer and method for gas-cluster ion-beam formation
JP5191650B2 (ja) * 2005-12-16 2013-05-08 シャープ株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
US7547900B2 (en) * 2006-12-22 2009-06-16 Varian Semiconductor Equipment Associates, Inc. Techniques for providing a ribbon-shaped gas cluster ion beam
US7670964B2 (en) * 2007-03-22 2010-03-02 Tokyo Electron Limited Apparatus and methods of forming a gas cluster ion beam using a low-pressure source
US9383138B2 (en) * 2007-03-30 2016-07-05 Tokyo Electron Limited Methods and heat treatment apparatus for uniformly heating a substrate during a bake process
US7550749B2 (en) * 2007-03-30 2009-06-23 Tel Epion Inc. Methods and processing systems for using a gas cluster ion beam to offset systematic non-uniformities in workpieces processed in a process tool
US7550748B2 (en) * 2007-03-30 2009-06-23 Tel Epion, Inc. Apparatus and methods for systematic non-uniformity correction using a gas cluster ion beam
US20080241400A1 (en) * 2007-03-31 2008-10-02 Tokyo Electron Limited Vacuum assist method and system for reducing intermixing of lithography layers
US7566888B2 (en) * 2007-05-23 2009-07-28 Tel Epion Inc. Method and system for treating an interior surface of a workpiece using a charged particle beam
US9144627B2 (en) 2007-09-14 2015-09-29 Exogenesis Corporation Methods for improving the bioactivity characteristics of a surface and objects with surfaces improved thereby
US7772110B2 (en) * 2007-09-28 2010-08-10 Tokyo Electron Limited Electrical contacts for integrated circuits and methods of forming using gas cluster ion beam processing
US20090166555A1 (en) * 2007-12-28 2009-07-02 Olson Joseph C RF electron source for ionizing gas clusters
WO2009112667A1 (fr) * 2008-01-11 2009-09-17 Excico Group Source d'ions à décharge électrique par filament
EP2079096B1 (fr) * 2008-01-11 2012-04-18 Excico Group N.V. Source d'ions à décharge électrique par filament
US7905199B2 (en) * 2008-06-24 2011-03-15 Tel Epion Inc. Method and system for directional growth using a gas cluster ion beam
US9103031B2 (en) * 2008-06-24 2015-08-11 Tel Epion Inc. Method and system for growing a thin film using a gas cluster ion beam
US20090314963A1 (en) * 2008-06-24 2009-12-24 Tel Epion Inc. Method for forming trench isolation
US8008632B2 (en) 2008-07-24 2011-08-30 Seagate Technology Llc Two-zone ion beam carbon deposition
US7834327B2 (en) * 2008-09-23 2010-11-16 Tel Epion Inc. Self-biasing active load circuit and related power supply for use in a charged particle beam processing system
US8313663B2 (en) * 2008-09-24 2012-11-20 Tel Epion Inc. Surface profile adjustment using gas cluster ion beam processing
US8097860B2 (en) * 2009-02-04 2012-01-17 Tel Epion Inc. Multiple nozzle gas cluster ion beam processing system and method of operating
US20100193898A1 (en) * 2009-02-04 2010-08-05 Tel Epion Inc. Method for forming trench isolation using gas cluster ion beam processing
US8981322B2 (en) 2009-02-04 2015-03-17 Tel Epion Inc. Multiple nozzle gas cluster ion beam system
US7968422B2 (en) * 2009-02-09 2011-06-28 Tel Epion Inc. Method for forming trench isolation using a gas cluster ion beam growth process
US20100200774A1 (en) * 2009-02-09 2010-08-12 Tel Epion Inc. Multi-sequence film deposition and growth using gas cluster ion beam processing
US7947582B2 (en) 2009-02-27 2011-05-24 Tel Epion Inc. Material infusion in a trap layer structure using gas cluster ion beam processing
US8226835B2 (en) * 2009-03-06 2012-07-24 Tel Epion Inc. Ultra-thin film formation using gas cluster ion beam processing
FR2943173B1 (fr) 2009-03-11 2016-03-18 Alcatel Lucent Cellule d'ionisation pour spectrometre de masse et detecteur de fuites correspondant
US7982196B2 (en) * 2009-03-31 2011-07-19 Tel Epion Inc. Method for modifying a material layer using gas cluster ion beam processing
US8877299B2 (en) * 2009-03-31 2014-11-04 Tel Epion Inc. Method for enhancing a substrate using gas cluster ion beam processing
US8217372B2 (en) * 2009-06-30 2012-07-10 Exogenesis Corporation Gas-cluster-jet generator and gas-cluster ion-beam apparatus utilizing an improved gas-cluster-jet generator
US20110084214A1 (en) * 2009-10-08 2011-04-14 Tel Epion Inc. Gas cluster ion beam processing method for preparing an isolation layer in non-planar gate structures
US8237136B2 (en) * 2009-10-08 2012-08-07 Tel Epion Inc. Method and system for tilting a substrate during gas cluster ion beam processing
US8048788B2 (en) * 2009-10-08 2011-11-01 Tel Epion Inc. Method for treating non-planar structures using gas cluster ion beam processing
US8187971B2 (en) 2009-11-16 2012-05-29 Tel Epion Inc. Method to alter silicide properties using GCIB treatment
US8992785B2 (en) * 2010-01-15 2015-03-31 Tel Epion Inc. Method for modifying an etch rate of a material layer using energetic charged particles
WO2011089912A1 (ja) * 2010-01-25 2011-07-28 株式会社日立ハイテクノロジーズ 質量分析装置
EP2539942B1 (de) * 2010-02-22 2016-09-14 Oc3 Ag Verfahren zur herstellung einer halbleiterschicht
US20110240602A1 (en) * 2010-03-30 2011-10-06 Tel Epion Inc. High-voltage gas cluster ion beam (gcib) processing system
US8173980B2 (en) 2010-05-05 2012-05-08 Tel Epion Inc. Gas cluster ion beam system with cleaning apparatus
US8338806B2 (en) 2010-05-05 2012-12-25 Tel Epion Inc. Gas cluster ion beam system with rapid gas switching apparatus
US8481340B2 (en) 2010-06-16 2013-07-09 Tel Epion Inc. Method for preparing a light-emitting device using gas cluster ion beam processing
US10670960B2 (en) * 2010-08-23 2020-06-02 Exogenesis Corporation Enhanced high aspect ratio etch performance using accelerated neutral beams derived from gas-cluster ion beams
US9799488B2 (en) * 2010-08-23 2017-10-24 Exogenesis Corporation Method and apparatus for neutral beam processing based on gas cluster ion beam technology
US11199769B2 (en) 2010-08-23 2021-12-14 Exogenesis Corporation Method and apparatus for neutral beam processing based on gas cluster ion beam technology
US20170303383A1 (en) * 2010-08-23 2017-10-19 Exogenesis Corporation Method for neutral beam processing based on gas cluster ion beam technology and articles produced thereby
RU2579749C2 (ru) 2010-08-23 2016-04-10 Эксодженезис Корпорейшн Способ и устройство обработки нейтральным пучком, основанные на технологии пучка газовых кластерных ионов
US10202684B2 (en) * 2010-08-23 2019-02-12 Exogenesis Corporation Method for neutral beam processing based on gas cluster ion beam technology and articles produced thereby
US10825685B2 (en) 2010-08-23 2020-11-03 Exogenesis Corporation Method for neutral beam processing based on gas cluster ion beam technology and articles produced thereby
WO2014130979A1 (en) * 2013-02-25 2014-08-28 Exogenesis Corporation Defect reduction in a substrate treatment method
US10181402B2 (en) 2010-08-23 2019-01-15 Exogenesis Corporation Method and apparatus for neutral beam processing based on gas cluster ion beam technology and articles produced thereby
US9159542B2 (en) * 2010-12-14 2015-10-13 Thermo Finnigan Llc Apparatus and method for inhibiting ionization source filament failure
US8440578B2 (en) 2011-03-28 2013-05-14 Tel Epion Inc. GCIB process for reducing interfacial roughness following pre-amorphization
US8633452B2 (en) 2011-07-13 2014-01-21 Fei Company Methods and structures for rapid switching between different process gases in an inductively-coupled plasma (ICP) ion source
US10556042B2 (en) 2011-08-19 2020-02-11 Exogenesis Corporation Drug delivery system and method of manufacturing thereof
EP2758184A4 (en) 2011-08-22 2015-06-24 Exogenesis Corp METHOD FOR IMPROVING THE BIOACTIVE PROPERTIES OF A SURFACE AND OBJECTS WITH SUCH IMPROVED SURFACES
CA2845762C (en) 2011-08-22 2019-01-08 Exogenesis Corporation Drug delivery system and method of manufacturing thereof
US8512586B2 (en) 2011-09-01 2013-08-20 Tel Epion Inc. Gas cluster ion beam etching process for achieving target etch process metrics for multiple materials
US8557710B2 (en) 2011-09-01 2013-10-15 Tel Epion Inc. Gas cluster ion beam etching process for metal-containing materials
US8513138B2 (en) 2011-09-01 2013-08-20 Tel Epion Inc. Gas cluster ion beam etching process for Si-containing and Ge-containing materials
US8722542B2 (en) 2012-06-08 2014-05-13 Tel Epion Inc. Gas cluster ion beam process for opening conformal layer in a high aspect ratio contact via
US8728947B2 (en) 2012-06-08 2014-05-20 Tel Epion Inc. Gas cluster ion beam process for opening conformal layer in a high aspect ratio contact via
US8546209B1 (en) 2012-06-15 2013-10-01 International Business Machines Corporation Replacement metal gate processing with reduced interlevel dielectric layer etch rate
TWI517463B (zh) * 2012-11-20 2016-01-11 佳能安內華股份有限公司 磁阻效應元件之製造方法
US9209033B2 (en) 2013-08-21 2015-12-08 Tel Epion Inc. GCIB etching method for adjusting fin height of finFET devices
US9105443B2 (en) 2013-11-20 2015-08-11 Tel Epion Inc. Multi-step location specific process for substrate edge profile correction for GCIB system
US9236221B2 (en) * 2013-11-22 2016-01-12 Tel Epion Inc. Molecular beam enhanced GCIB treatment
US9123505B1 (en) 2014-02-21 2015-09-01 Tel Epion Inc. Apparatus and methods for implementing predicted systematic error correction in location specific processing
US9540725B2 (en) 2014-05-14 2017-01-10 Tel Epion Inc. Method and apparatus for beam deflection in a gas cluster ion beam system
US9691900B2 (en) 2014-11-24 2017-06-27 International Business Machines Corporation Dual epitaxy CMOS processing using selective nitride formation for reduced gate pitch
JP6545053B2 (ja) * 2015-03-30 2019-07-17 東京エレクトロン株式会社 処理装置および処理方法、ならびにガスクラスター発生装置および発生方法
CN106783491A (zh) * 2016-12-23 2017-05-31 信利（惠州）智能显示有限公司 一种离子注入设备及其使用方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2704438B2 (ja) 1989-09-04 1998-01-26 東京エレクトロン株式会社 イオン注入装置
US5466929A (en) 1992-02-21 1995-11-14 Hitachi, Ltd. Apparatus and method for suppressing electrification of sample in charged beam irradiation apparatus
JP3386175B2 (ja) * 1993-03-22 2003-03-17 科学技術振興事業団 ガスクラスターイオン援用による化合物薄膜の形成方法
US5814194A (en) 1994-10-20 1998-09-29 Matsushita Electric Industrial Co., Ltd Substrate surface treatment method
US5959305A (en) 1998-06-19 1999-09-28 Eaton Corporation Method and apparatus for monitoring charge neutralization operation
US6416820B1 (en) 1999-11-19 2002-07-09 Epion Corporation Method for forming carbonaceous hard film
EP1238406B1 (en) * 1999-12-06 2008-12-17 TEL Epion Inc. Gas cluster ion beam smoother apparatus
WO2001043160A1 (en) 1999-12-10 2001-06-14 Epion Corporation Ionizer for gas cluster ion beam formation
EP1272261A4 (en) * 2000-03-20 2007-02-21 Epion Corp DEVICE FOR MEASURING THE CLUSTER SIZE AND METHOD FOR CLUSTER ION RADIATION DIAGNOSTICS
JP2004504691A (ja) 2000-07-14 2004-02-12 エピオン　コーポレイション Ｇｃｉｂサイズ診断および加工品処理
JP4168381B2 (ja) * 2000-12-26 2008-10-22 ティーイーエル エピオン インク． ガスクラスターイオンビームのための充電制御および線量測定システム
EP1550144A4 (en) 2002-09-23 2009-07-08 Tel Epion Inc ION BEAM BEAM TREATMENT METHOD AND SYSTEM THEREFOR
JP2004146085A (ja) * 2002-10-22 2004-05-20 Hitachi Ltd ガスクラスターイオンの発生方法及びその発生装置
WO2005089459A2 (en) * 2004-03-17 2005-09-29 Epion Corporation Method and apparatus for improved beam stability in high current gas-cluster ion beam processing system
EP1807859A2 (en) * 2004-10-25 2007-07-18 TEL Epion Inc. Ionizer and method for gas-cluster ion-beam formation

Similar Documents

Publication Publication Date Title
JP2008518407A5 (enExample)
JP4926067B2 (ja) ガスクラスターイオンビーム形成のためのイオナイザおよび方法
JP6717990B2 (ja) イオン化装置およびそれを有する質量分析計
TWI518733B (zh) 離子源、離子植入系統與產生多個電荷離子於離子源內的方法
JP5822767B2 (ja) イオン源装置及びイオンビーム生成方法
CA1039860A (en) Double chamber ion source
JP2002117780A (ja) イオン注入装置用のイオン源およびそのためのリペラ
JP5186599B2 (ja) 電子銃、真空処理装置
JP4977008B2 (ja) 高電流ガスクラスターイオンビーム処理システムにおけるビーム安定性向上方法及び装置
WO2002019379A1 (en) Device and process for producing dc glow discharge
US5821677A (en) Ion source block filament with laybrinth conductive path
JP3454384B2 (ja) イオンビーム発生装置及び方法
US20080087842A1 (en) Source Of Generating Multicharged Ions And Charged Particle Beam Apparatus Using Such Ion Generating Source
CN209312712U (zh) 离子束镀膜聚焦离子源
US3514666A (en) Charged particle generator yielding a mono-energetic ion beam
GB1398167A (en) High pressure ion sources
JPS60240039A (ja) イオン銃
JP2011065969A (ja) イオン源及びイオン照射方法
JP2020024894A (ja) イオンビーム中和方法と装置
JPH02168541A (ja) 電子ビーム励起イオン源
JP2002289106A (ja) イオン注入装置
JP2989989B2 (ja) イオン発生装置
TW202412037A (zh) 氣體團簇離子束裝置
JPH0160888B2 (enExample)
JPH06338279A (ja) 電子銃