JP4916620B2 - 液晶表示装置及び電気光学装置 - Google Patents
液晶表示装置及び電気光学装置 Download PDFInfo
- Publication number
- JP4916620B2 JP4916620B2 JP2001138293A JP2001138293A JP4916620B2 JP 4916620 B2 JP4916620 B2 JP 4916620B2 JP 2001138293 A JP2001138293 A JP 2001138293A JP 2001138293 A JP2001138293 A JP 2001138293A JP 4916620 B2 JP4916620 B2 JP 4916620B2
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- Prior art keywords
- colored layer
- film
- region
- liquid crystal
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 239000010408 film Substances 0.000 claims description 209
- 239000003990 capacitor Substances 0.000 claims description 16
- 238000003860 storage Methods 0.000 claims description 13
- 239000004642 Polyimide Substances 0.000 claims description 9
- 229920001721 polyimide Polymers 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 7
- 239000004952 Polyamide Substances 0.000 claims description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 4
- 150000001408 amides Chemical class 0.000 claims description 4
- 229920002647 polyamide Polymers 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 250
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- 239000011159 matrix material Substances 0.000 description 57
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- 238000004519 manufacturing process Methods 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- 125000006850 spacer group Chemical group 0.000 description 12
- 239000011229 interlayer Substances 0.000 description 11
- 238000000059 patterning Methods 0.000 description 11
- 239000007789 gas Substances 0.000 description 9
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- 239000000565 sealant Substances 0.000 description 9
- 238000002834 transmittance Methods 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 8
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 8
- 239000002356 single layer Substances 0.000 description 8
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- 238000002425 crystallisation Methods 0.000 description 7
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- 229910052698 phosphorus Inorganic materials 0.000 description 7
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- 238000004544 sputter deposition Methods 0.000 description 7
- 235000010724 Wisteria floribunda Nutrition 0.000 description 6
- 238000001994 activation Methods 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 239000003086 colorant Substances 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 238000009616 inductively coupled plasma Methods 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
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- 239000004925 Acrylic resin Substances 0.000 description 3
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- 230000004913 activation Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
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- 230000005611 electricity Effects 0.000 description 3
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- 230000003287 optical effect Effects 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
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- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 239000005407 aluminoborosilicate glass Substances 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000005262 ferroelectric liquid crystals (FLCs) Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical group [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Optical Elements Other Than Lenses (AREA)
- Optical Filters (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001138293A JP4916620B2 (ja) | 2000-05-12 | 2001-05-09 | 液晶表示装置及び電気光学装置 |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000140960 | 2000-05-12 | ||
| JP2000140960 | 2000-05-12 | ||
| JP2000-140960 | 2000-05-12 | ||
| JP2001138293A JP4916620B2 (ja) | 2000-05-12 | 2001-05-09 | 液晶表示装置及び電気光学装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002082630A JP2002082630A (ja) | 2002-03-22 |
| JP2002082630A5 JP2002082630A5 (https=) | 2008-06-19 |
| JP4916620B2 true JP4916620B2 (ja) | 2012-04-18 |
Family
ID=26591831
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001138293A Expired - Lifetime JP4916620B2 (ja) | 2000-05-12 | 2001-05-09 | 液晶表示装置及び電気光学装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4916620B2 (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI272556B (en) | 2002-05-13 | 2007-02-01 | Semiconductor Energy Lab | Display device |
| KR100885017B1 (ko) * | 2002-09-03 | 2009-02-20 | 삼성전자주식회사 | 액정 표시 장치 |
| JP2004177592A (ja) * | 2002-11-26 | 2004-06-24 | Seiko Epson Corp | 着色層材料、カラーフィルタ基板、電気光学装置、及び電子機器 |
| JP2004258367A (ja) * | 2003-02-26 | 2004-09-16 | Seiko Epson Corp | カラーフィルタ基板、電気光学装置及び電子機器 |
| JP2007256371A (ja) | 2006-03-20 | 2007-10-04 | Nec Lcd Technologies Ltd | カラーフィルタ及びその製造方法並びに液晶表示装置 |
| US8906490B2 (en) * | 2006-05-19 | 2014-12-09 | Eastman Kodak Company | Multicolor mask |
| US8129098B2 (en) * | 2007-11-20 | 2012-03-06 | Eastman Kodak Company | Colored mask combined with selective area deposition |
| US7876387B2 (en) | 2008-01-18 | 2011-01-25 | Nec Lcd Technologies, Ltd. | Lateral electric field type liquid crystal display device |
| CN102577610B (zh) | 2009-11-10 | 2015-04-08 | 松下电器产业株式会社 | 有机电致发光显示装置 |
| JP5035454B2 (ja) * | 2011-07-19 | 2012-09-26 | 日本電気株式会社 | カラーフィルタ及びその製造方法並びに液晶表示装置 |
| JP6779109B2 (ja) * | 2016-11-21 | 2020-11-04 | 三菱電機株式会社 | 薄膜トランジスタ基板及びその製造方法、並びに、表示装置 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62250416A (ja) * | 1986-04-23 | 1987-10-31 | Stanley Electric Co Ltd | Tft組込型カラ−液晶表示素子 |
| JP2684361B2 (ja) * | 1986-06-13 | 1997-12-03 | セイコーエプソン株式会社 | 液晶表示体 |
| JPH02287303A (ja) * | 1989-04-28 | 1990-11-27 | Ube Ind Ltd | 多層カラーフィルター |
| JP2797532B2 (ja) * | 1989-10-20 | 1998-09-17 | 富士通株式会社 | カラー液晶パネルの製造方法 |
| JPH04313729A (ja) * | 1991-04-09 | 1992-11-05 | Mitsubishi Electric Corp | 液晶表示装置 |
| JP2556252B2 (ja) * | 1993-05-14 | 1996-11-20 | 日本電気株式会社 | 薄膜電界効果型トランジスタアレイ |
| JP3413000B2 (ja) * | 1996-01-25 | 2003-06-03 | 株式会社東芝 | アクティブマトリックス液晶パネル |
| JP3896624B2 (ja) * | 1997-02-14 | 2007-03-22 | ソニー株式会社 | 薄膜半導体装置及びそれを用いた表示装置 |
| JPH1138439A (ja) * | 1997-07-16 | 1999-02-12 | Toshiba Corp | アクティブマトリクス基板及びその製造方法並びにアクティブマトリクス型液晶表示装置 |
| JPH11340471A (ja) * | 1998-05-25 | 1999-12-10 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
-
2001
- 2001-05-09 JP JP2001138293A patent/JP4916620B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002082630A (ja) | 2002-03-22 |
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