JP4911988B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4911988B2
JP4911988B2 JP2006049014A JP2006049014A JP4911988B2 JP 4911988 B2 JP4911988 B2 JP 4911988B2 JP 2006049014 A JP2006049014 A JP 2006049014A JP 2006049014 A JP2006049014 A JP 2006049014A JP 4911988 B2 JP4911988 B2 JP 4911988B2
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JP
Japan
Prior art keywords
voltage
transistor
node
circuit
level
Prior art date
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Expired - Fee Related
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JP2006049014A
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English (en)
Japanese (ja)
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JP2007228420A5 (enExample
JP2007228420A (ja
Inventor
章 多田
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Renesas Electronics Corp
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Renesas Electronics Corp
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Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2006049014A priority Critical patent/JP4911988B2/ja
Priority to US11/708,458 priority patent/US7436205B2/en
Publication of JP2007228420A publication Critical patent/JP2007228420A/ja
Priority to US12/230,694 priority patent/US7667484B2/en
Publication of JP2007228420A5 publication Critical patent/JP2007228420A5/ja
Application granted granted Critical
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Static Random-Access Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP2006049014A 2006-02-24 2006-02-24 半導体装置 Expired - Fee Related JP4911988B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2006049014A JP4911988B2 (ja) 2006-02-24 2006-02-24 半導体装置
US11/708,458 US7436205B2 (en) 2006-02-24 2007-02-21 Semiconductor device reducing power consumption in standby mode
US12/230,694 US7667484B2 (en) 2006-02-24 2008-09-03 Semiconductor device reducing power consumption in standby mode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006049014A JP4911988B2 (ja) 2006-02-24 2006-02-24 半導体装置

Publications (3)

Publication Number Publication Date
JP2007228420A JP2007228420A (ja) 2007-09-06
JP2007228420A5 JP2007228420A5 (enExample) 2009-03-26
JP4911988B2 true JP4911988B2 (ja) 2012-04-04

Family

ID=38478768

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006049014A Expired - Fee Related JP4911988B2 (ja) 2006-02-24 2006-02-24 半導体装置

Country Status (2)

Country Link
US (2) US7436205B2 (enExample)
JP (1) JP4911988B2 (enExample)

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US20070183185A1 (en) * 2006-01-11 2007-08-09 The Regents Of The University Of California Finfet-based sram with feedback
JP5034379B2 (ja) * 2006-08-30 2012-09-26 富士通セミコンダクター株式会社 半導体メモリおよびシステム
US7863971B1 (en) * 2006-11-27 2011-01-04 Cypress Semiconductor Corporation Configurable power controller
US7760011B2 (en) * 2007-08-10 2010-07-20 Texas Instruments Incorporated System and method for auto-power gating synthesis for active leakage reduction
JP2009060560A (ja) * 2007-09-04 2009-03-19 Fujitsu Microelectronics Ltd マスタスレーブ回路及びその制御方法
US7698585B2 (en) 2008-07-10 2010-04-13 International Business Machines Corporation Apparatus, system, and method for reducing idle power in a power supply
KR100964920B1 (ko) 2008-07-31 2010-06-23 재단법인서울대학교산학협력재단 파워게이팅 회로 및 방법
WO2010026500A1 (en) * 2008-09-02 2010-03-11 Nxp B.V. Static random access memory comprising a current source, and method to put memory cells of such a memory into sleep or write mode using said current source
DE102008053533A1 (de) * 2008-10-28 2010-04-29 Atmel Automotive Gmbh Schaltung, Verfahren zur Steuerung und Verwendung einer Schaltung für einen Ruhemodus und einen Betriebsmodus
US9886389B2 (en) 2008-11-21 2018-02-06 International Business Machines Corporation Cache memory bypass in a multi-core processor (MCP)
US7804329B2 (en) * 2008-11-21 2010-09-28 International Business Machines Corporation Internal charge transfer for circuits
US9122617B2 (en) * 2008-11-21 2015-09-01 International Business Machines Corporation Pseudo cache memory in a multi-core processor (MCP)
US9824008B2 (en) * 2008-11-21 2017-11-21 International Business Machines Corporation Cache memory sharing in a multi-core processor (MCP)
TWI401693B (zh) * 2009-01-05 2013-07-11 Nanya Technology Corp 電壓提供電路、以及使用此電壓提供電路的訊號延遲系統
US8406075B2 (en) * 2009-04-03 2013-03-26 Taiwan Semiconductor Manufacturing Company, Ltd. Ultra-low leakage memory architecture
KR20110108125A (ko) * 2010-03-26 2011-10-05 삼성전자주식회사 집적 회로 장치, 그리고 그것을 포함하는 컴퓨팅 시스템
CN103069717B (zh) 2010-08-06 2018-01-30 株式会社半导体能源研究所 半导体集成电路
US8415972B2 (en) * 2010-11-17 2013-04-09 Advanced Micro Devices, Inc. Variable-width power gating module
JP5512498B2 (ja) 2010-11-29 2014-06-04 株式会社東芝 半導体装置
JP2012216590A (ja) * 2011-03-31 2012-11-08 Elpida Memory Inc 半導体装置
US9070776B2 (en) * 2011-04-15 2015-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
KR102147870B1 (ko) * 2012-01-23 2020-08-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2013157800A (ja) * 2012-01-30 2013-08-15 Renesas Electronics Corp 半導体集積回路、およびその半導体集積回路の動作方法
US9299395B2 (en) 2012-03-26 2016-03-29 Intel Corporation Methods and systems to selectively boost an operating voltage of, and controls to an 8T bit-cell array and/or other logic blocks
US9207750B2 (en) * 2012-12-14 2015-12-08 Intel Corporation Apparatus and method for reducing leakage power of a circuit
US8890602B2 (en) * 2013-01-16 2014-11-18 Freescale Semiconductor, Inc. Well-biasing circuit for integrated circuit
US9007122B2 (en) * 2013-06-05 2015-04-14 Via Technologies, Inc. Digital power gating with state retention
US9000834B2 (en) 2013-06-05 2015-04-07 Via Technologies, Inc. Digital power gating with global voltage shift
US9450580B2 (en) 2013-06-05 2016-09-20 Via Technologies, Inc. Digital power gating with programmable control parameter
US8963627B2 (en) * 2013-06-05 2015-02-24 Via Technologies, Inc. Digital power gating with controlled resume
JP2015032651A (ja) * 2013-08-01 2015-02-16 マイクロン テクノロジー， インク． 半導体装置
US9094011B2 (en) * 2013-11-27 2015-07-28 Samsung Electronics Co., Ltd. Power gate switch architecture
JP6392082B2 (ja) 2014-10-31 2018-09-19 ルネサスエレクトロニクス株式会社 半導体記憶装置
US9653131B1 (en) 2016-02-12 2017-05-16 Micron Technology, Inc. Apparatuses and methods for voltage level control
CN105514196B (zh) * 2016-02-18 2017-04-05 苏州佳亿达电器有限公司 集成mos场效应管逆变器的太阳能电池板的制造方法
CN105577110B (zh) * 2016-02-18 2017-09-15 南通欧贝黎新能源电力股份有限公司 集成结型场效应管逆变器的太阳能电池板
CN105577109B (zh) * 2016-02-18 2017-09-05 南通欧贝黎新能源电力股份有限公司 集成结型场效应管逆变器的太阳能电池板的制造方法
JP6618587B2 (ja) * 2018-08-21 2019-12-11 ルネサスエレクトロニクス株式会社 半導体装置
JP2020174323A (ja) * 2019-04-12 2020-10-22 ルネサスエレクトロニクス株式会社 半導体装置
JP2021163917A (ja) * 2020-04-02 2021-10-11 ルネサスエレクトロニクス株式会社 半導体装置
CN113098467B (zh) * 2021-03-01 2023-05-26 电子科技大学 一种降低泄漏功率的多阈值cmos电路

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2931776B2 (ja) 1995-08-21 1999-08-09 三菱電機株式会社 半導体集積回路
JP3341805B2 (ja) 1996-05-28 2002-11-05 日本電信電話株式会社 論理回路
US6285213B1 (en) * 1997-11-19 2001-09-04 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device
KR100269643B1 (ko) * 1997-11-27 2000-10-16 김영환 전력소비 억제회로
JP3123516B2 (ja) * 1998-08-14 2001-01-15 日本電気株式会社 半導体装置及び半導体装置の駆動方法
JP2002305434A (ja) * 2001-04-04 2002-10-18 Sharp Corp 半導体集積回路
JP2003110022A (ja) * 2001-09-28 2003-04-11 Mitsubishi Electric Corp 半導体集積回路
JP3928937B2 (ja) * 2002-05-24 2007-06-13 シャープ株式会社 半導体集積回路
JP4052923B2 (ja) * 2002-10-25 2008-02-27 株式会社ルネサステクノロジ 半導体装置
JP2005236654A (ja) * 2004-02-19 2005-09-02 Nippon Telegr & Teleph Corp <Ntt> 半導体ｍｏｓ集積回路
US7164616B2 (en) * 2004-12-20 2007-01-16 Intel Corporation Memory array leakage reduction circuit and method

Also Published As

Publication number Publication date
US7667484B2 (en) 2010-02-23
US20090009214A1 (en) 2009-01-08
US20070211553A1 (en) 2007-09-13
US7436205B2 (en) 2008-10-14
JP2007228420A (ja) 2007-09-06

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