JP4911936B2 - プラズマアッシング方法 - Google Patents

プラズマアッシング方法 Download PDF

Info

Publication number
JP4911936B2
JP4911936B2 JP2005262713A JP2005262713A JP4911936B2 JP 4911936 B2 JP4911936 B2 JP 4911936B2 JP 2005262713 A JP2005262713 A JP 2005262713A JP 2005262713 A JP2005262713 A JP 2005262713A JP 4911936 B2 JP4911936 B2 JP 4911936B2
Authority
JP
Japan
Prior art keywords
gas
film
ashing
frequency power
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005262713A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007080850A (ja
JP2007080850A5 (https=
Inventor
慈 田原
直嗣 星
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2005262713A priority Critical patent/JP4911936B2/ja
Priority to US11/509,591 priority patent/US7964511B2/en
Priority to CNB2006101514582A priority patent/CN100485883C/zh
Publication of JP2007080850A publication Critical patent/JP2007080850A/ja
Publication of JP2007080850A5 publication Critical patent/JP2007080850A5/ja
Priority to US13/103,719 priority patent/US8404596B2/en
Application granted granted Critical
Publication of JP4911936B2 publication Critical patent/JP4911936B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Drying Of Semiconductors (AREA)
JP2005262713A 2005-09-09 2005-09-09 プラズマアッシング方法 Expired - Fee Related JP4911936B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2005262713A JP4911936B2 (ja) 2005-09-09 2005-09-09 プラズマアッシング方法
US11/509,591 US7964511B2 (en) 2005-09-09 2006-08-25 Plasma ashing method
CNB2006101514582A CN100485883C (zh) 2005-09-09 2006-09-08 等离子体灰化方法
US13/103,719 US8404596B2 (en) 2005-09-09 2011-05-09 Plasma ashing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005262713A JP4911936B2 (ja) 2005-09-09 2005-09-09 プラズマアッシング方法

Publications (3)

Publication Number Publication Date
JP2007080850A JP2007080850A (ja) 2007-03-29
JP2007080850A5 JP2007080850A5 (https=) 2008-12-25
JP4911936B2 true JP4911936B2 (ja) 2012-04-04

Family

ID=37858992

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005262713A Expired - Fee Related JP4911936B2 (ja) 2005-09-09 2005-09-09 プラズマアッシング方法

Country Status (2)

Country Link
JP (1) JP4911936B2 (https=)
CN (1) CN100485883C (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4578507B2 (ja) * 2007-07-02 2010-11-10 東京エレクトロン株式会社 半導体装置の製造方法、半導体製造装置及び記憶媒体
JP2010034415A (ja) 2008-07-30 2010-02-12 Hitachi High-Technologies Corp プラズマ処理方法
CN101740332B (zh) * 2008-11-13 2012-04-25 中芯国际集成电路制造(北京)有限公司 一种半导体元件的蚀刻方法
CN101930916B (zh) * 2009-06-18 2012-11-28 中芯国际集成电路制造(上海)有限公司 形成沟槽的方法
JP5544893B2 (ja) 2010-01-20 2014-07-09 東京エレクトロン株式会社 基板処理方法及び記憶媒体
CN102376562B (zh) * 2010-08-24 2013-09-04 中芯国际集成电路制造(上海)有限公司 用于半导体工艺的灰化处理方法
CN102386088B (zh) * 2010-09-03 2014-06-25 中芯国际集成电路制造(上海)有限公司 用于去除半导体器件结构上的光致抗蚀剂层的方法
CN102610511A (zh) * 2012-03-21 2012-07-25 中微半导体设备(上海)有限公司 光刻胶的去除方法
JP7357237B2 (ja) * 2019-03-14 2023-10-06 パナソニックＩｐマネジメント株式会社 素子チップの製造方法
CN111681957B (zh) * 2020-07-24 2022-03-11 上海华虹宏力半导体制造有限公司 刻蚀方法及半导体器件的制造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000195830A (ja) * 1998-12-28 2000-07-14 Mitsubishi Electric Corp 半導体製造装置、半導体製造装置のクリ―ニング方法、半導体装置の製造方法及び半導体装置
JP2001196376A (ja) * 2000-01-14 2001-07-19 Seiko Epson Corp 半導体装置の製造方法
JP2004119539A (ja) * 2002-09-25 2004-04-15 Sony Corp レジストパターンの除去方法
JP4558296B2 (ja) * 2003-09-25 2010-10-06 東京エレクトロン株式会社 プラズマアッシング方法

Also Published As

Publication number Publication date
CN100485883C (zh) 2009-05-06
JP2007080850A (ja) 2007-03-29
CN1929096A (zh) 2007-03-14

Similar Documents

Publication Publication Date Title
US7344993B2 (en) Low-pressure removal of photoresist and etch residue
US9208997B2 (en) Method of etching copper layer and mask
KR100971045B1 (ko) 수증기 및 희석 가스를 이용하여 강화되는 수소 애슁 방법
CN100418186C (zh) 多室基材处理系统中执行的整合原位蚀刻工艺
US7700494B2 (en) Low-pressure removal of photoresist and etch residue
US8404595B2 (en) Plasma processing method
JP4312630B2 (ja) プラズマ処理方法及びプラズマ処理装置
JP4825911B2 (ja) 介在チャンバでの脱フッ素化及びウェハ脱フッ素化ステップによるプラズマエッチング及びフォトレジストストリッププロセス
JP2019533910A (ja) 高アスペクト比の構造体のための除去方法
JP4701776B2 (ja) エッチング方法及びエッチング装置
JP2017098478A (ja) エッチング方法
TWI436419B (zh) A plasma etch method and a computer readable memory medium
JP2012033833A (ja) プラズマ処理方法及びプラズマ処理装置
JP4558296B2 (ja) プラズマアッシング方法
US8404596B2 (en) Plasma ashing method
KR101540816B1 (ko) 플라즈마 에칭 방법, 컴퓨터 기억 매체 및 플라즈마 에칭 장치
CN102194686A (zh) 等离子体蚀刻方法和等离子体蚀刻装置
JP2008028022A (ja) プラズマエッチング方法およびコンピュータ読取可能な記憶媒体
JP4911936B2 (ja) プラズマアッシング方法
US20090029557A1 (en) Plasma etching method, plasma etching apparatus and storage medium
JP2015079797A (ja) 銅層をエッチングする方法
TWI689007B (zh) 蝕刻方法
JP2006245097A (ja) プラズマ処理装置におけるｆ密度測定方法とプラズマ処理方法およびプラズマ処理装置
JP3834004B2 (ja) エッチング後処理方法
US20050287814A1 (en) H2O plasma for simultaneous resist removal and charge releasing

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080904

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080904

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081110

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100903

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100907

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101105

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20110621

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110921

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20111115

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120117

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120117

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 4911936

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150127

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees