JP4908947B2 - 変換装置、放射線検出装置、及び放射線検出システム - Google Patents

変換装置、放射線検出装置、及び放射線検出システム Download PDF

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Publication number
JP4908947B2
JP4908947B2 JP2006181890A JP2006181890A JP4908947B2 JP 4908947 B2 JP4908947 B2 JP 4908947B2 JP 2006181890 A JP2006181890 A JP 2006181890A JP 2006181890 A JP2006181890 A JP 2006181890A JP 4908947 B2 JP4908947 B2 JP 4908947B2
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Japan
Prior art keywords
wiring
layer
terminal
signal
radiation detection
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Expired - Fee Related
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JP2006181890A
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Japanese (ja)
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JP2007049122A (ja
JP2007049122A5 (enExample
Inventor
千織 望月
慶一 野村
実 渡辺
孝昌 石井
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Canon Inc
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Canon Inc
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Priority to JP2006181890A priority Critical patent/JP4908947B2/ja
Priority to US11/456,155 priority patent/US7429723B2/en
Publication of JP2007049122A publication Critical patent/JP2007049122A/ja
Priority to US12/184,522 priority patent/US7655920B2/en
Publication of JP2007049122A5 publication Critical patent/JP2007049122A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
    • G01T1/2914—Measurement of spatial distribution of radiation
    • G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
    • G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Measurement Of Radiation (AREA)
JP2006181890A 2005-07-11 2006-06-30 変換装置、放射線検出装置、及び放射線検出システム Expired - Fee Related JP4908947B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2006181890A JP4908947B2 (ja) 2005-07-11 2006-06-30 変換装置、放射線検出装置、及び放射線検出システム
US11/456,155 US7429723B2 (en) 2005-07-11 2006-07-07 Conversion apparatus, radiation detection apparatus, and radiation detection system
US12/184,522 US7655920B2 (en) 2005-07-11 2008-08-01 Conversion apparatus, radiation detection apparatus, and radiation detection system

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005201603 2005-07-11
JP2005201603 2005-07-11
JP2006181890A JP4908947B2 (ja) 2005-07-11 2006-06-30 変換装置、放射線検出装置、及び放射線検出システム

Publications (3)

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JP2007049122A JP2007049122A (ja) 2007-02-22
JP2007049122A5 JP2007049122A5 (enExample) 2011-10-20
JP4908947B2 true JP4908947B2 (ja) 2012-04-04

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JP2006181890A Expired - Fee Related JP4908947B2 (ja) 2005-07-11 2006-06-30 変換装置、放射線検出装置、及び放射線検出システム

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US (2) US7429723B2 (enExample)
JP (1) JP4908947B2 (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4908947B2 (ja) * 2005-07-11 2012-04-04 キヤノン株式会社 変換装置、放射線検出装置、及び放射線検出システム
KR101350795B1 (ko) * 2007-06-11 2014-01-10 삼성디스플레이 주식회사 엑스레이 검출기용 박막 트랜지스터 어레이
JP5235350B2 (ja) * 2007-08-07 2013-07-10 キヤノン株式会社 撮像装置及び放射線撮像システム
JP2009252835A (ja) 2008-04-02 2009-10-29 Fujifilm Corp 電磁波検出素子
KR101469042B1 (ko) * 2008-08-29 2014-12-05 삼성디스플레이 주식회사 엑스레이 검출 패널 및 엑스레이 검출기
JP5439984B2 (ja) * 2009-07-03 2014-03-12 ソニー株式会社 光電変換装置および放射線撮像装置
TWI424574B (zh) * 2009-07-28 2014-01-21 Prime View Int Co Ltd 數位ｘ光探測面板及其製作方法
JP2011159781A (ja) * 2010-02-01 2011-08-18 Epson Imaging Devices Corp 光電変換装置、エックス線撮像装置及び光電変換装置の製造方法
JP2011159782A (ja) * 2010-02-01 2011-08-18 Epson Imaging Devices Corp 光電変換装置、エックス線撮像装置及び光電変換装置の製造方法
JP2011238897A (ja) * 2010-04-13 2011-11-24 Canon Inc 検出装置及びその製造方法並びに検出システム
JP5700973B2 (ja) * 2010-08-05 2015-04-15 キヤノン株式会社 検出装置及び放射線検出システム
JP2015092518A (ja) * 2012-02-22 2015-05-14 富士フイルム株式会社 半導体素子、放射線検出器、及び半導体素子の製造方法
CN102790069B (zh) * 2012-07-26 2014-09-10 北京京东方光电科技有限公司 一种传感器及其制造方法
JP5709810B2 (ja) * 2012-10-02 2015-04-30 キヤノン株式会社 検出装置の製造方法、その検出装置及び検出システム
WO2016195000A1 (ja) * 2015-06-04 2016-12-08 シャープ株式会社 フォトセンサ基板
CN108318907B (zh) * 2018-02-01 2019-10-01 北京京东方光电科技有限公司 X射线探测面板及其制造方法和x射线探测装置
JP2019145595A (ja) * 2018-02-16 2019-08-29 シャープ株式会社 アクティブマトリクス基板及びそれを備えたｘ線撮像パネルと製造方法
CN109490933B (zh) * 2018-10-22 2020-05-01 京东方科技集团股份有限公司 平板探测器、其检测方法及x射线探测装置

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JPH06160877A (ja) 1992-11-25 1994-06-07 Hitachi Ltd 薄膜配線構造及びそれを用いた液晶表示装置
JPH07183324A (ja) 1993-12-22 1995-07-21 Sony Corp 半導体装置
FR2758630B1 (fr) 1997-01-21 1999-04-09 Thomson Tubes Electroniques Procede de scellement etanche d'un detecteur de rayonnement a l'etat solide et detecteur obtenu par ce procede
JP2001251557A (ja) * 1999-12-27 2001-09-14 Canon Inc エリアセンサ、該エリアセンサを有する画像入力装置および該エリアセンサの駆動方法
US6765187B2 (en) * 2001-06-27 2004-07-20 Canon Kabushiki Kaisha Imaging apparatus
JP2003319270A (ja) 2002-04-24 2003-11-07 Canon Inc 光感知又は放射線感知センサからなる撮像装置及びその検査方法
JP2003347534A (ja) * 2002-05-28 2003-12-05 Canon Inc 放射線検出装置及びその製造方法
US7214945B2 (en) 2002-06-11 2007-05-08 Canon Kabushiki Kaisha Radiation detecting apparatus, manufacturing method therefor, and radiation image pickup system
JP4054612B2 (ja) 2002-06-11 2008-02-27 キヤノン株式会社 放射線撮像装置
JP4018461B2 (ja) * 2002-06-11 2007-12-05 キヤノン株式会社 放射線検出装置及びその製造方法並びに放射線撮像システム
US7148487B2 (en) * 2002-08-27 2006-12-12 Canon Kabushiki Kaisha Image sensing apparatus and method using radiation
JP4502575B2 (ja) * 2002-11-06 2010-07-14 奇美電子股▲ふん▼有限公司 表示装置の配線形成方法
DE60336291D1 (de) * 2002-11-13 2011-04-21 Canon Kk Bildaufnahmevorrichtung, Strahlungsbildaufnahmevorrichtung und Strahlungsbildaufnahmesystem
JP2004281998A (ja) * 2003-01-23 2004-10-07 Seiko Epson Corp トランジスタとその製造方法、電気光学装置、半導体装置並びに電子機器
JP4266656B2 (ja) * 2003-02-14 2009-05-20 キヤノン株式会社 固体撮像装置及び放射線撮像装置
JP2004296654A (ja) * 2003-03-26 2004-10-21 Canon Inc 放射線撮像装置
JP4908947B2 (ja) * 2005-07-11 2012-04-04 キヤノン株式会社 変換装置、放射線検出装置、及び放射線検出システム

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US20070007458A1 (en) 2007-01-11
US7655920B2 (en) 2010-02-02
US20080290284A1 (en) 2008-11-27
JP2007049122A (ja) 2007-02-22
US7429723B2 (en) 2008-09-30

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