JP4906029B2 - 表示装置の作製方法 - Google Patents

表示装置の作製方法 Download PDF

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Publication number
JP4906029B2
JP4906029B2 JP2004241368A JP2004241368A JP4906029B2 JP 4906029 B2 JP4906029 B2 JP 4906029B2 JP 2004241368 A JP2004241368 A JP 2004241368A JP 2004241368 A JP2004241368 A JP 2004241368A JP 4906029 B2 JP4906029 B2 JP 4906029B2
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Japan
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layer
electrode layer
semiconductor layer
type
source
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Expired - Fee Related
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JP2004241368A
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English (en)
Japanese (ja)
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JP2006058676A5 (enExample
JP2006058676A (ja
Inventor
慎志 前川
達也 本田
幸恵 根本
郁子 川俣
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2004241368A priority Critical patent/JP4906029B2/ja
Publication of JP2006058676A publication Critical patent/JP2006058676A/ja
Publication of JP2006058676A5 publication Critical patent/JP2006058676A5/ja
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Publication of JP4906029B2 publication Critical patent/JP4906029B2/ja
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  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2004241368A 2004-08-20 2004-08-20 表示装置の作製方法 Expired - Fee Related JP4906029B2 (ja)

Priority Applications (1)

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JP2004241368A JP4906029B2 (ja) 2004-08-20 2004-08-20 表示装置の作製方法

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JP2004241368A JP4906029B2 (ja) 2004-08-20 2004-08-20 表示装置の作製方法

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JP2006058676A JP2006058676A (ja) 2006-03-02
JP2006058676A5 JP2006058676A5 (enExample) 2007-09-27
JP4906029B2 true JP4906029B2 (ja) 2012-03-28

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JP2004241368A Expired - Fee Related JP4906029B2 (ja) 2004-08-20 2004-08-20 表示装置の作製方法

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Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8173519B2 (en) * 2006-03-03 2012-05-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5135699B2 (ja) * 2006-03-28 2013-02-06 セイコーエプソン株式会社 電気光学装置用基板の製造方法及び電気光学装置の製造方法
JP2007287732A (ja) * 2006-04-12 2007-11-01 Mitsubishi Electric Corp 薄膜トランジスタ、その製造方法、及び表示装置
KR101293566B1 (ko) 2007-01-11 2013-08-06 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
JP5213421B2 (ja) 2007-12-04 2013-06-19 キヤノン株式会社 酸化物半導体薄膜トランジスタ
KR101406889B1 (ko) 2007-12-24 2014-06-13 삼성디스플레이 주식회사 박막트랜지스터 및 그의 제조 방법
JP6258569B2 (ja) * 2008-08-04 2018-01-10 ザ、トラスティーズ オブ プリンストン ユニバーシティ 薄膜トランジスタ用のハイブリッド誘電体材料
KR101623224B1 (ko) 2008-09-12 2016-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
US8461582B2 (en) * 2009-03-05 2013-06-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US20100224878A1 (en) 2009-03-05 2010-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101074809B1 (ko) * 2009-12-22 2011-10-19 삼성모바일디스플레이주식회사 유기 발광 표시 장치
KR101929190B1 (ko) 2010-03-05 2018-12-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP5770236B2 (ja) * 2013-09-18 2015-08-26 株式会社ジャパンディスプレイ 表示装置
WO2018181522A1 (ja) * 2017-03-31 2018-10-04 株式会社ジャパンディスプレイ 電子機器及びその製造方法
JP6715312B2 (ja) * 2018-12-04 2020-07-01 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． 表示装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6159389A (ja) * 1984-08-30 1986-03-26 株式会社東芝 アクテイブマトリツクス型表示装置用表示電極アレイの製造方法
JPH0654782B2 (ja) * 1985-02-08 1994-07-20 セイコー電子工業株式会社 薄膜トランジスタ装置の製造方法
JPS61183622A (ja) * 1985-02-08 1986-08-16 Seiko Instr & Electronics Ltd 薄膜トランジスタ装置とその製造方法
JPH0745836A (ja) * 1993-07-27 1995-02-14 Rohm Co Ltd 薄膜トランジスタおよびその製法
JP2003203926A (ja) * 2001-10-30 2003-07-18 Semiconductor Energy Lab Co Ltd 半導体装置
JP4126996B2 (ja) * 2002-03-13 2008-07-30 セイコーエプソン株式会社 デバイスの製造方法及びデバイス製造装置

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