JP4896416B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4896416B2
JP4896416B2 JP2005061959A JP2005061959A JP4896416B2 JP 4896416 B2 JP4896416 B2 JP 4896416B2 JP 2005061959 A JP2005061959 A JP 2005061959A JP 2005061959 A JP2005061959 A JP 2005061959A JP 4896416 B2 JP4896416 B2 JP 4896416B2
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Japan
Prior art keywords
gate electrode
transistor
insulating film
film
semiconductor
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JP2005061959A
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Japanese (ja)
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JP2005294814A (ja
JP2005294814A5 (enExample
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哲司 山口
清 加藤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005061959A priority Critical patent/JP4896416B2/ja
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Publication of JP2005294814A5 publication Critical patent/JP2005294814A5/ja
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JP2005061959A 2004-03-08 2005-03-07 半導体装置の作製方法 Expired - Fee Related JP4896416B2 (ja)

Priority Applications (1)

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JP2005061959A JP4896416B2 (ja) 2004-03-08 2005-03-07 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004063901 2004-03-08
JP2004063901 2004-03-08
JP2005061959A JP4896416B2 (ja) 2004-03-08 2005-03-07 半導体装置の作製方法

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JP2005294814A JP2005294814A (ja) 2005-10-20
JP2005294814A5 JP2005294814A5 (enExample) 2008-03-27
JP4896416B2 true JP4896416B2 (ja) 2012-03-14

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JP2005061959A Expired - Fee Related JP4896416B2 (ja) 2004-03-08 2005-03-07 半導体装置の作製方法

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Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI411095B (zh) 2005-09-29 2013-10-01 Semiconductor Energy Lab 記憶裝置
EP1966740B1 (en) 2005-12-27 2016-02-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI416738B (zh) * 2006-03-21 2013-11-21 Semiconductor Energy Lab 非揮發性半導體記憶體裝置
JP5164405B2 (ja) * 2006-03-21 2013-03-21 株式会社半導体エネルギー研究所 不揮発性半導体記憶装置
JP5164404B2 (ja) * 2006-03-21 2013-03-21 株式会社半導体エネルギー研究所 不揮発性半導体記憶装置
JP2007294911A (ja) * 2006-03-31 2007-11-08 Semiconductor Energy Lab Co Ltd 不揮発性半導体記憶装置
JP5483659B2 (ja) * 2006-03-31 2014-05-07 株式会社半導体エネルギー研究所 半導体装置
US8629490B2 (en) 2006-03-31 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor storage device with floating gate electrode and control gate electrode
WO2007138754A1 (ja) * 2006-05-31 2007-12-06 Sharp Kabushiki Kaisha 半導体装置、その製造方法、及び、表示装置
KR100843887B1 (ko) * 2006-06-02 2008-07-03 주식회사 하이닉스반도체 집적회로 및 그 정보 기록 방법
US8581260B2 (en) 2007-02-22 2013-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a memory

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2873276B2 (ja) * 1995-11-08 1999-03-24 エルジイ・セミコン・カンパニイ・リミテッド 浮遊ゲートを有する半導体素子の製造方法
JPH1187545A (ja) * 1997-07-08 1999-03-30 Sony Corp 半導体不揮発性記憶装置およびその製造方法
JP2003518742A (ja) * 1999-12-21 2003-06-10 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 不揮発性のメモリーセルと周辺部
JP2003249579A (ja) * 2003-02-10 2003-09-05 Toshiba Corp 不揮発性半導体記憶装置およびその製造方法

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