JP4886169B2 - マスク及びその設計方法、露光方法、並びに、デバイス製造方法 - Google Patents

マスク及びその設計方法、露光方法、並びに、デバイス製造方法 Download PDF

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Publication number
JP4886169B2
JP4886169B2 JP2004031547A JP2004031547A JP4886169B2 JP 4886169 B2 JP4886169 B2 JP 4886169B2 JP 2004031547 A JP2004031547 A JP 2004031547A JP 2004031547 A JP2004031547 A JP 2004031547A JP 4886169 B2 JP4886169 B2 JP 4886169B2
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Japan
Prior art keywords
pattern
mask
auxiliary
patterns
contact hole
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Expired - Fee Related
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JP2004031547A
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English (en)
Japanese (ja)
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JP2004272228A5 (enExample
JP2004272228A (ja
Inventor
賢治 山添
謙治 斉藤
章義 鈴木
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Canon Inc
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Canon Inc
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Priority to JP2004031547A priority Critical patent/JP4886169B2/ja
Publication of JP2004272228A publication Critical patent/JP2004272228A/ja
Publication of JP2004272228A5 publication Critical patent/JP2004272228A5/ja
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Publication of JP4886169B2 publication Critical patent/JP4886169B2/ja
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  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2004031547A 2003-02-21 2004-02-09 マスク及びその設計方法、露光方法、並びに、デバイス製造方法 Expired - Fee Related JP4886169B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004031547A JP4886169B2 (ja) 2003-02-21 2004-02-09 マスク及びその設計方法、露光方法、並びに、デバイス製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003044992 2003-02-21
JP2003044992 2003-02-21
JP2004031547A JP4886169B2 (ja) 2003-02-21 2004-02-09 マスク及びその設計方法、露光方法、並びに、デバイス製造方法

Publications (3)

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JP2004272228A JP2004272228A (ja) 2004-09-30
JP2004272228A5 JP2004272228A5 (enExample) 2007-04-05
JP4886169B2 true JP4886169B2 (ja) 2012-02-29

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Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050225740A1 (en) * 2004-03-31 2005-10-13 Padlyar Sushil D Light source for photolithography
US7372540B2 (en) 2004-10-12 2008-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR100675882B1 (ko) * 2004-12-22 2007-02-02 주식회사 하이닉스반도체 다중투과 위상 마스크 및 이를 이용한 노광 방법
TWI368327B (en) 2005-01-17 2012-07-11 Samsung Electronics Co Ltd Optical mask and manufacturing method of thin film transistor array panel using the optical mask
JP4784220B2 (ja) * 2005-09-14 2011-10-05 凸版印刷株式会社 位相シフトマスク
JP4750525B2 (ja) 2005-10-14 2011-08-17 キヤノン株式会社 露光方法及びデバイス製造方法
JP2007123333A (ja) 2005-10-25 2007-05-17 Canon Inc 露光方法
JP4689471B2 (ja) * 2006-01-06 2011-05-25 エルピーダメモリ株式会社 回路パターン露光方法及びマスク
JP4812470B2 (ja) * 2006-03-08 2011-11-09 ルネサスエレクトロニクス株式会社 フォトマスクおよび露光方法
JP4484909B2 (ja) 2007-07-24 2010-06-16 キヤノン株式会社 原版データ作成方法、原版作成方法、露光方法および原版データ作成プログラム
JP4834784B2 (ja) * 2008-03-03 2011-12-14 株式会社東芝 半導体装置の製造方法
JP4635085B2 (ja) 2008-03-03 2011-02-16 株式会社東芝 半導体装置の製造方法
KR101061357B1 (ko) * 2009-02-17 2011-08-31 주식회사 하이닉스반도체 포토 마스크
JP5185235B2 (ja) 2009-09-18 2013-04-17 株式会社東芝 フォトマスクの設計方法およびフォトマスクの設計プログラム
JP2012053286A (ja) 2010-09-01 2012-03-15 Renesas Electronics Corp フォトマスクと、それを用いた半導体装置の製造装置および方法と、フォトマスクのパターン配置方法
JP6003068B2 (ja) * 2012-01-30 2016-10-05 富士通セミコンダクター株式会社 露光方法
JP6081716B2 (ja) * 2012-05-02 2017-02-15 Hoya株式会社 フォトマスク、パターン転写方法及びフラットパネルディスプレイの製造方法
CN118689033A (zh) * 2017-03-31 2024-09-24 株式会社尼康 掩模
CN115268203A (zh) * 2022-07-08 2022-11-01 上海华虹宏力半导体制造有限公司 灰度掩模图形

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2590680B2 (ja) * 1993-04-06 1997-03-12 日本電気株式会社 補助パターン型位相シフトマスク
JPH1184625A (ja) * 1997-07-07 1999-03-26 Matsushita Electron Corp 半導体装置製造用マスクおよび半導体装置の製造方法
JP2001110719A (ja) * 1999-10-14 2001-04-20 Hitachi Ltd 露光方法
JP4145003B2 (ja) * 2000-07-14 2008-09-03 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP3768794B2 (ja) * 2000-10-13 2006-04-19 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法
JP3754934B2 (ja) * 2002-04-23 2006-03-15 キヤノン株式会社 マスクパターン及び照明条件の設定方法

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