JP4883536B2 - 半導体レーザ素子および半導体レーザ装置 - Google Patents
半導体レーザ素子および半導体レーザ装置 Download PDFInfo
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- JP4883536B2 JP4883536B2 JP2008285969A JP2008285969A JP4883536B2 JP 4883536 B2 JP4883536 B2 JP 4883536B2 JP 2008285969 A JP2008285969 A JP 2008285969A JP 2008285969 A JP2008285969 A JP 2008285969A JP 4883536 B2 JP4883536 B2 JP 4883536B2
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- 239000004065 semiconductor Substances 0.000 title claims description 118
- 230000000903 blocking effect Effects 0.000 claims description 134
- 238000005253 cladding Methods 0.000 claims description 83
- 230000004927 fusion Effects 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 14
- 230000017525 heat dissipation Effects 0.000 claims description 11
- 239000010410 layer Substances 0.000 description 433
- 239000012212 insulator Substances 0.000 description 32
- 238000004519 manufacturing process Methods 0.000 description 20
- 239000000758 substrate Substances 0.000 description 19
- 229920002120 photoresistant polymer Polymers 0.000 description 17
- 229910000679 solder Inorganic materials 0.000 description 16
- 238000000034 method Methods 0.000 description 15
- 230000003071 parasitic effect Effects 0.000 description 14
- 229910004298 SiO 2 Inorganic materials 0.000 description 13
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 10
- 229920001721 polyimide Polymers 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 150000004767 nitrides Chemical class 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 235000005811 Viola adunca Nutrition 0.000 description 5
- 240000009038 Viola odorata Species 0.000 description 5
- 235000013487 Viola odorata Nutrition 0.000 description 5
- 235000002254 Viola papilionacea Nutrition 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 5
- 230000005855 radiation Effects 0.000 description 5
- 238000001771 vacuum deposition Methods 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- -1 hydrazine hydride Chemical compound 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008285969A JP4883536B2 (ja) | 2008-11-06 | 2008-11-06 | 半導体レーザ素子および半導体レーザ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008285969A JP4883536B2 (ja) | 2008-11-06 | 2008-11-06 | 半導体レーザ素子および半導体レーザ装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003336765A Division JP4286097B2 (ja) | 2003-09-29 | 2003-09-29 | 半導体レーザ素子および半導体レーザ装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009027205A JP2009027205A (ja) | 2009-02-05 |
| JP2009027205A5 JP2009027205A5 (enExample) | 2010-03-25 |
| JP4883536B2 true JP4883536B2 (ja) | 2012-02-22 |
Family
ID=40398646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008285969A Expired - Lifetime JP4883536B2 (ja) | 2008-11-06 | 2008-11-06 | 半導体レーザ素子および半導体レーザ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4883536B2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010206071A (ja) * | 2009-03-05 | 2010-09-16 | Sony Corp | 半導体レーザ素子 |
| JP2013021022A (ja) * | 2011-07-07 | 2013-01-31 | Sumitomo Electric Ind Ltd | 半導体レーザ素子 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0728102B2 (ja) * | 1988-12-08 | 1995-03-29 | 松下電器産業株式会社 | 半導体レーザおよびその製造方法 |
| US5088099A (en) * | 1990-12-20 | 1992-02-11 | At&T Bell Laboratories | Apparatus comprising a laser adapted for emission of single mode radiation having low transverse divergence |
| JPH04291781A (ja) * | 1991-03-20 | 1992-10-15 | Fujitsu Ltd | 光半導体装置及びその製造方法 |
| KR960014732B1 (ko) * | 1992-12-22 | 1996-10-19 | 양승택 | Rwg형 반도체 레이저장치 및 제조방법 |
| JPH08111565A (ja) * | 1994-10-12 | 1996-04-30 | Nippon Telegr & Teleph Corp <Ntt> | 半導体光素子および製造方法 |
| JPH08220358A (ja) * | 1995-02-09 | 1996-08-30 | Hitachi Ltd | 導波路型光素子 |
| JPH11145558A (ja) * | 1997-11-05 | 1999-05-28 | Hitachi Ltd | 半導体光素子、送受信モジュールおよび光通信システム |
| JP3864634B2 (ja) * | 1998-09-25 | 2007-01-10 | 三菱化学株式会社 | 半導体発光装置及びその製造方法 |
| WO2001039342A1 (fr) * | 1999-11-22 | 2001-05-31 | Sony Corporation | Element electroluminescent a semi-conducteur |
| AU4718101A (en) * | 1999-12-20 | 2001-07-03 | Corning Lasertron, Inc. | Wide ridge pump laser |
| JP2003069153A (ja) * | 2001-08-29 | 2003-03-07 | Hitachi Ltd | 半導体光デバイス及び集積型光半導体装置 |
-
2008
- 2008-11-06 JP JP2008285969A patent/JP4883536B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009027205A (ja) | 2009-02-05 |
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