JP4877866B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP4877866B2 JP4877866B2 JP2004313315A JP2004313315A JP4877866B2 JP 4877866 B2 JP4877866 B2 JP 4877866B2 JP 2004313315 A JP2004313315 A JP 2004313315A JP 2004313315 A JP2004313315 A JP 2004313315A JP 4877866 B2 JP4877866 B2 JP 4877866B2
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- 239000004065 semiconductor Substances 0.000 title claims description 193
- 238000000034 method Methods 0.000 title claims description 184
- 238000004519 manufacturing process Methods 0.000 title claims description 80
- 239000010410 layer Substances 0.000 claims description 366
- 239000000758 substrate Substances 0.000 claims description 120
- 239000007789 gas Substances 0.000 claims description 43
- 239000000463 material Substances 0.000 claims description 42
- 239000012535 impurity Substances 0.000 claims description 40
- 229920005989 resin Polymers 0.000 claims description 30
- 239000011347 resin Substances 0.000 claims description 30
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 23
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 18
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- 229910052760 oxygen Inorganic materials 0.000 claims description 17
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- 229910021332 silicide Inorganic materials 0.000 claims description 16
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 15
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- 238000007599 discharging Methods 0.000 claims description 13
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- 229910052786 argon Inorganic materials 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
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- 239000001257 hydrogen Substances 0.000 claims description 6
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- 238000007865 diluting Methods 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
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- 239000001307 helium Substances 0.000 claims description 4
- 229910052734 helium Inorganic materials 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052743 krypton Inorganic materials 0.000 claims description 4
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 4
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- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 claims description 2
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
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- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- -1 acetone Chemical compound 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
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- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 2
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- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
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- 238000005499 laser crystallization Methods 0.000 description 2
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- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
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- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910008486 TiSix Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
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- 150000001298 alcohols Chemical class 0.000 description 1
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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- OLLFKUHHDPMQFR-UHFFFAOYSA-N dihydroxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](O)(O)C1=CC=CC=C1 OLLFKUHHDPMQFR-UHFFFAOYSA-N 0.000 description 1
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- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
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- 238000010030 laminating Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
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- AHLBNYSZXLDEJQ-FWEHEUNISA-N orlistat Chemical compound CCCCCCCCCCC[C@H](OC(=O)[C@H](CC(C)C)NC=O)C[C@@H]1OC(=O)[C@H]1CCCCCC AHLBNYSZXLDEJQ-FWEHEUNISA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
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- 238000005070 sampling Methods 0.000 description 1
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- 238000005507 spraying Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Landscapes
- Liquid Crystal (AREA)
- Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004313315A JP4877866B2 (ja) | 2003-10-28 | 2004-10-28 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003368141 | 2003-10-28 | ||
| JP2003368141 | 2003-10-28 | ||
| JP2004313315A JP4877866B2 (ja) | 2003-10-28 | 2004-10-28 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005167212A JP2005167212A (ja) | 2005-06-23 |
| JP2005167212A5 JP2005167212A5 (enExample) | 2007-10-18 |
| JP4877866B2 true JP4877866B2 (ja) | 2012-02-15 |
Family
ID=34741098
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004313315A Expired - Fee Related JP4877866B2 (ja) | 2003-10-28 | 2004-10-28 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4877866B2 (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4010335B2 (ja) | 2005-06-30 | 2007-11-21 | セイコーエプソン株式会社 | 集積回路装置及び電子機器 |
| US7528017B2 (en) | 2005-12-07 | 2009-05-05 | Kovio, Inc. | Method of manufacturing complementary diodes |
| JP4882700B2 (ja) * | 2006-11-22 | 2012-02-22 | セイコーエプソン株式会社 | 集積回路装置及び電子機器 |
| JP5234717B2 (ja) * | 2007-03-20 | 2013-07-10 | ローム株式会社 | 半導体集積回路装置 |
| EP2515337B1 (en) * | 2008-12-24 | 2016-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit and semiconductor device |
| KR101988341B1 (ko) | 2009-09-04 | 2019-06-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 발광 장치를 제작하기 위한 방법 |
| IN2012DN01823A (enExample) | 2009-10-16 | 2015-06-05 | Semiconductor Energy Lab | |
| JP6079548B2 (ja) | 2013-10-11 | 2017-02-15 | セイコーエプソン株式会社 | 静電気保護回路、電気光学装置、及び電子機器 |
| CN120726951A (zh) | 2020-03-19 | 2025-09-30 | 京东方科技集团股份有限公司 | 显示基板及显示装置 |
| US12317703B2 (en) | 2020-03-19 | 2025-05-27 | Boe Technology Group Co., Ltd. | Display substrate having connection electrode in a same layer with one capacitor electrode and electrically connecting the other capacitor electrode to data writing sub-circuit, and display device |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0682839B2 (ja) * | 1984-08-21 | 1994-10-19 | セイコー電子工業株式会社 | 表示用パネルの製造方法 |
| JPH08201853A (ja) * | 1994-11-24 | 1996-08-09 | Toshiba Electron Eng Corp | 電極基板および平面表示装置 |
| JP3725169B2 (ja) * | 1996-05-15 | 2005-12-07 | セイコーエプソン株式会社 | 塗布膜を有する薄膜デバイスの製造方法 |
| JPH11340129A (ja) * | 1998-05-28 | 1999-12-10 | Seiko Epson Corp | パターン製造方法およびパターン製造装置 |
| JP3980312B2 (ja) * | 2001-09-26 | 2007-09-26 | 株式会社日立製作所 | 液晶表示装置およびその製造方法 |
-
2004
- 2004-10-28 JP JP2004313315A patent/JP4877866B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2005167212A (ja) | 2005-06-23 |
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