JP4871513B2 - 薄く形成されたカンチレバー構造を備えた微小機械装置及び関連の方法 - Google Patents

薄く形成されたカンチレバー構造を備えた微小機械装置及び関連の方法 Download PDF

Info

Publication number
JP4871513B2
JP4871513B2 JP2005028526A JP2005028526A JP4871513B2 JP 4871513 B2 JP4871513 B2 JP 4871513B2 JP 2005028526 A JP2005028526 A JP 2005028526A JP 2005028526 A JP2005028526 A JP 2005028526A JP 4871513 B2 JP4871513 B2 JP 4871513B2
Authority
JP
Japan
Prior art keywords
region
wafer
semiconductor layer
layer
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005028526A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005268758A (ja
JP2005268758A5 (https=
Inventor
クワンホワ・ウー
アミル・ラザ・ミルザ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JP2005268758A publication Critical patent/JP2005268758A/ja
Publication of JP2005268758A5 publication Critical patent/JP2005268758A5/ja
Application granted granted Critical
Publication of JP4871513B2 publication Critical patent/JP4871513B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0086—Electrical characteristics, e.g. reducing driving voltage, improving resistance to peak voltage
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B60—VEHICLES IN GENERAL
    • B60C—VEHICLE TYRES; TYRE INFLATION; TYRE CHANGING; CONNECTING VALVES TO INFLATABLE ELASTIC BODIES IN GENERAL; DEVICES OR ARRANGEMENTS RELATED TO TYRES
    • B60C23/00—Devices for measuring, signalling, controlling, or distributing tyre pressure or temperature, specially adapted for mounting on vehicles; Arrangement of tyre inflating devices on vehicles, e.g. of pumps or of tanks; Tyre cooling arrangements
    • B60C23/02—Signalling devices actuated by tyre pressure
    • B60C23/04—Signalling devices actuated by tyre pressure mounted on the wheel or tyre
    • B60C23/0408—Signalling devices actuated by tyre pressure mounted on the wheel or tyre transmitting the signals by non-mechanical means from the wheel or tyre to a vehicle body mounted receiver
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00214—Processes for the simultaneaous manufacturing of a network or an array of similar microstructural devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349—Creating layers of material on a substrate
    • B81C1/00357—Creating layers of material on a substrate involving bonding one or several substrates on a non-temporary support, e.g. another substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/0092—Pressure sensor associated with other sensors, e.g. for measuring acceleration or temperature
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0118—Cantilevers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0174—Manufacture or treatment of microstructural devices or systems in or on a substrate for making multi-layered devices, film deposition or growing
    • B81C2201/019—Bonding or gluing multiple substrate layers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
    • G01P2015/0828—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type being suspended at one of its longitudinal ends

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
  • Micromachines (AREA)
JP2005028526A 2004-02-06 2005-02-04 薄く形成されたカンチレバー構造を備えた微小機械装置及び関連の方法 Expired - Fee Related JP4871513B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/774,011 US20050172717A1 (en) 2004-02-06 2004-02-06 Micromechanical device with thinned cantilever structure and related methods
US10/774,011 2004-02-06

Publications (3)

Publication Number Publication Date
JP2005268758A JP2005268758A (ja) 2005-09-29
JP2005268758A5 JP2005268758A5 (https=) 2011-02-10
JP4871513B2 true JP4871513B2 (ja) 2012-02-08

Family

ID=34679401

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005028526A Expired - Fee Related JP4871513B2 (ja) 2004-02-06 2005-02-04 薄く形成されたカンチレバー構造を備えた微小機械装置及び関連の方法

Country Status (3)

Country Link
US (2) US20050172717A1 (https=)
EP (1) EP1561724A1 (https=)
JP (1) JP4871513B2 (https=)

Families Citing this family (73)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0302271D0 (en) * 2003-01-31 2003-03-05 Melexis Nv Integrated pressure and acceleration measurement device and a method of manufacture thereof
US7368312B1 (en) * 2004-10-15 2008-05-06 Morgan Research Corporation MEMS sensor suite on a chip
US7485847B2 (en) 2004-12-08 2009-02-03 Georgia Tech Research Corporation Displacement sensor employing discrete light pulse detection
US7371601B2 (en) * 2005-05-12 2008-05-13 Delphi Technologies, Inc. Piezoresistive sensing structure
DE102005032635A1 (de) * 2005-07-13 2007-01-25 Robert Bosch Gmbh Mikromechanische Vorrichtung mit zwei Sensorstrukturen, Verfahren zur Herstellung einer mikromechanischen Vorrichtung
DE602005007235D1 (de) * 2005-09-28 2008-07-10 St Microelectronics Srl Verfahren zum Herstellen von dicken hängenden Strukturen aus Halbleitermaterial
DE102005055473A1 (de) * 2005-11-22 2007-05-24 Robert Bosch Gmbh Mikromechanische Vorrichtung und Verfahren zur Herstellung einer mikromechanischen Vorrichtung
US7539003B2 (en) 2005-12-01 2009-05-26 Lv Sensors, Inc. Capacitive micro-electro-mechanical sensors with single crystal silicon electrodes
DE102006011545B4 (de) * 2006-03-14 2016-03-17 Robert Bosch Gmbh Mikromechanisches Kombi-Bauelement und entsprechendes Herstellungsverfahren
US7508040B2 (en) 2006-06-05 2009-03-24 Hewlett-Packard Development Company, L.P. Micro electrical mechanical systems pressure sensor
US7851876B2 (en) * 2006-10-20 2010-12-14 Hewlett-Packard Development Company, L.P. Micro electro mechanical system
US7571650B2 (en) * 2007-07-30 2009-08-11 Hewlett-Packard Development Company, L.P. Piezo resistive pressure sensor
NL2000835C2 (nl) 2007-08-29 2009-03-03 Xsens Technologies Bv Inrichting en werkwijze voor het meten van de dynamische interactie tussen lichamen.
JP4508253B2 (ja) * 2008-03-13 2010-07-21 国立大学法人 東京大学 ３次元構造体およびその製造方法
US8468887B2 (en) * 2008-04-14 2013-06-25 Freescale Semiconductor, Inc. Resonant accelerometer with low sensitivity to package stress
KR101001666B1 (ko) * 2008-07-08 2010-12-15 광주과학기술원 마이크로 수직 구조체의 제조 방법
US8258799B2 (en) 2008-11-07 2012-09-04 The Charles Stark Draper Laboratory, Inc. MEMS dosimeter
US8220330B2 (en) * 2009-03-24 2012-07-17 Freescale Semiconductor, Inc. Vertically integrated MEMS sensor device with multi-stimulus sensing
WO2010138717A1 (en) * 2009-05-27 2010-12-02 King Abdullah University Of Science And Technology Mems mass spring damper systems using an out-of-plane suspension scheme
NO333724B1 (no) * 2009-08-14 2013-09-02 Sintef En mikromekanisk rekke med optisk reflekterende overflater
US8569092B2 (en) * 2009-12-28 2013-10-29 General Electric Company Method for fabricating a microelectromechanical sensor with a piezoresistive type readout
US8435821B2 (en) * 2010-06-18 2013-05-07 General Electric Company Sensor and method for fabricating the same
US8304275B2 (en) * 2010-08-31 2012-11-06 Freescale Semiconductor, Inc. MEMS device assembly and method of packaging same
US9131325B2 (en) 2010-08-31 2015-09-08 Freescale Semiconductor, Inc. MEMS device assembly and method of packaging same
EP2669648A4 (en) * 2011-01-28 2017-03-01 The University of Tokyo Differential pressure sensor
US20120211805A1 (en) * 2011-02-22 2012-08-23 Bernhard Winkler Cavity structures for mems devices
FR2972263B1 (fr) * 2011-03-03 2013-09-27 Tronics Microsystems Capteur inertiel et procede de fabrication correspondant
CN102183677B (zh) * 2011-03-15 2012-08-08 迈尔森电子（天津）有限公司 集成惯性传感器与压力传感器及其形成方法
US8511171B2 (en) * 2011-05-23 2013-08-20 General Electric Company Device for measuring environmental forces and method of fabricating the same
JP5541306B2 (ja) * 2011-05-27 2014-07-09 株式会社デンソー 力学量センサ装置およびその製造方法
CN102507978B (zh) * 2011-09-29 2014-12-17 中北大学 基于e指数半导体器件的嵌入式高灵敏度微加速度计
KR101267436B1 (ko) 2011-10-28 2013-05-31 앰코 테크놀로지 코리아 주식회사 압력센서용 멤스 디바이스
TWI518804B (zh) * 2012-02-14 2016-01-21 Asia Pacific Microsystems Inc Monolithic compound sensor and its package
JP5778619B2 (ja) * 2012-05-02 2015-09-16 セイコーインスツル株式会社 圧力センサ
JP2013250133A (ja) 2012-05-31 2013-12-12 Seiko Epson Corp 電子デバイス及びその製造方法、並びに電子機器
US9010200B2 (en) 2012-08-06 2015-04-21 Amphenol Thermometrics, Inc. Device for measuring forces and method of making the same
ITMI20121692A1 (it) * 2012-10-09 2014-04-10 St Microelectronics Srl Rilevatore di onde gravitazionali e metodo di rilevazione di onde gravitazionali
CN102976263B (zh) * 2012-12-11 2015-04-15 北京大学 一种mems压阻式多轴力传感器的制备方法
US9580302B2 (en) 2013-03-15 2017-02-28 Versana Micro Inc. Cell phone having a monolithically integrated multi-sensor device on a semiconductor substrate and method therefor
CN105874312B (zh) 2013-08-05 2019-04-12 罗伯特·博世有限公司 在单芯片上的惯性和压力传感器
US9837935B2 (en) * 2013-10-29 2017-12-05 Honeywell International Inc. All-silicon electrode capacitive transducer on a glass substrate
EP3092499B1 (en) * 2013-12-30 2018-10-31 Robert Bosch GmbH Robust inertial sensors
CN104062463B (zh) * 2014-06-13 2017-04-12 浙江工业大学 一种压阻式加速度传感器及其制造方法
CN104089642B (zh) * 2014-06-13 2017-04-12 浙江工业大学 一种压阻式加速度、压力集成传感器及其制造方法
CN104062464B (zh) * 2014-06-13 2017-04-12 浙江工业大学 一种mems压阻式加速度、压力集成传感器及制造方法
CN105277733B (zh) * 2014-06-27 2018-06-08 广芯电子技术（上海）股份有限公司 Mems加速度传感器的硅盖帽结构
US9446940B2 (en) 2014-10-03 2016-09-20 Freescale Semiconductor, Inc. Stress isolation for MEMS device
GB2533084A (en) * 2014-12-02 2016-06-15 Melexis Tech N V Relative and absolute pressure sensor combined on chip
US9837526B2 (en) 2014-12-08 2017-12-05 Nxp Usa, Inc. Semiconductor device wtih an interconnecting semiconductor electrode between first and second semiconductor electrodes and method of manufacture therefor
US9899236B2 (en) * 2014-12-24 2018-02-20 Stmicroelectronics, Inc. Semiconductor package with cantilever pads
US9458008B1 (en) 2015-03-16 2016-10-04 Freescale Semiconductor, Inc. Method of making a MEMS die having a MEMS device on a suspended structure
CN105174198A (zh) * 2015-08-12 2015-12-23 中国电子科技集团公司第三十八研究所 一种封装结构的加速度传感器及其制备方法
CN105181011A (zh) * 2015-08-12 2015-12-23 中国电子科技集团公司第三十八研究所 一种封装结构的压力、加速度二合一传感器及其制备方法
US10348295B2 (en) 2015-11-19 2019-07-09 Nxp Usa, Inc. Packaged unidirectional power transistor and control circuit therefore
US9926190B2 (en) * 2016-01-21 2018-03-27 Taiwan Semiconductor Manufacturing Company, Ltd. MEMS devices and methods of forming the same
EP3617686B1 (en) 2018-08-31 2021-10-27 Melexis Technologies NV Pressure sensor device and method of sensing pressure
CN109545953B (zh) * 2018-12-24 2023-01-17 中国航空工业集团公司西安飞行自动控制研究所 一种高温压力传感器芯片的制备方法
CN109678102B (zh) * 2018-12-28 2024-07-19 杭州士兰集成电路有限公司 Mems结构及其制造方法
CN109850840B (zh) * 2018-12-29 2024-09-06 杭州士兰集成电路有限公司 Mems器件及其制造方法
CN109640517B (zh) * 2018-12-29 2020-05-08 中国电子科技集团公司第五十四研究所 一种ltcc基悬臂梁结构的制造方法
WO2020146863A1 (en) * 2019-01-13 2020-07-16 Schlumberger Technology Corporation Seismic image data interpretation system
WO2020187761A1 (de) 2019-03-18 2020-09-24 Siemens Aktiengesellschaft Multifunktionaler sensor für die prozess- oder versorgungstechnik
CN110182753B (zh) * 2019-04-19 2021-11-16 中国科学院上海微系统与信息技术研究所 高灵敏度加速度传感器结构的制作方法
CN112504548A (zh) * 2019-08-23 2021-03-16 武汉杰开科技有限公司 一种复合传感器及其加工方法、tpms芯片
KR102250895B1 (ko) 2019-12-23 2021-05-12 주식회사 현대케피코 반도체 소자의 제조방법
US11981560B2 (en) 2020-06-09 2024-05-14 Analog Devices, Inc. Stress-isolated MEMS device comprising substrate having cavity and method of manufacture
IT202000018670A1 (it) * 2020-07-30 2022-01-30 St Microelectronics Srl Accelerometro mems a larga banda per la rilevazione di vibrazioni
US11825750B2 (en) * 2020-10-29 2023-11-21 Vanguard International Semiconductor Corporation Micro-electromechanical system device and method of forming the same
CN114604817B (zh) * 2020-12-07 2025-10-28 世界先进积体电路股份有限公司 微机电装置及其形成方法
CN113776721B (zh) * 2021-09-07 2024-06-07 上海韦尔半导体股份有限公司 传感器集成芯片及其制造方法
CN113959327B (zh) * 2021-10-14 2022-11-15 中国科学院力学研究所 一种具有高灵敏度的多层结构应变传感器
CN114061827A (zh) * 2021-11-11 2022-02-18 西人马联合测控（泉州）科技有限公司 一种传感器芯片及其制备方法
CN119481632A (zh) * 2024-11-20 2025-02-18 江苏飞特尔通信有限公司 一种可重构滤波器

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2827610C2 (de) * 1978-06-23 1987-02-19 Goldwell Gmbh, Chemische Fabrik H.E. Dotter, 6100 Darmstadt Gerätesatz zur Aufbereitung von kosmetischen Oxydations-Haarfärbe-Präparaten
US4663648A (en) * 1984-12-19 1987-05-05 Texas Instruments Incorporated Three dimensional structures of active and passive semiconductor components
US4730496A (en) * 1986-06-23 1988-03-15 Rosemount Inc. Capacitance pressure sensor
US5121633A (en) * 1987-12-18 1992-06-16 Nissan Motor Co., Ltd. Semiconductor accelerometer
US5016072A (en) * 1988-01-13 1991-05-14 The Charles Stark Draper Laboratory, Inc. Semiconductor chip gyroscopic transducer
US5065978A (en) * 1988-04-27 1991-11-19 Dragerwerk Aktiengesellschaft Valve arrangement of microstructured components
US4882933A (en) * 1988-06-03 1989-11-28 Novasensor Accelerometer with integral bidirectional shock protection and controllable viscous damping
EP0363005B1 (en) * 1988-09-02 1996-06-05 Honda Giken Kogyo Kabushiki Kaisha A semiconductor sensor
US5060526A (en) * 1989-05-30 1991-10-29 Schlumberger Industries, Inc. Laminated semiconductor sensor with vibrating element
US5594172A (en) * 1989-06-21 1997-01-14 Nissan Motor Co., Ltd. Semiconductor accelerometer having a cantilevered beam with a triangular or pentagonal cross section
DE3926647A1 (de) * 1989-08-11 1991-02-14 Bosch Gmbh Robert Verfahren zur herstellung eines mikroventils
US5238223A (en) * 1989-08-11 1993-08-24 Robert Bosch Gmbh Method of making a microvalve
US5132658A (en) * 1990-04-19 1992-07-21 Sensym, Inc. Micromachined silicon potentiometer responsive to pressure
US5400824A (en) * 1991-01-21 1995-03-28 Robert Bosch Gmbh Microvalve
JPH04268725A (ja) * 1991-02-25 1992-09-24 Canon Inc 力学量検出センサおよびその製造方法
US5235187A (en) * 1991-05-14 1993-08-10 Cornell Research Foundation Methods of fabricating integrated, aligned tunneling tip pairs
DE4133820A1 (de) * 1991-10-12 1993-04-15 Bosch Gmbh Robert Verfahren zur herstellung von halbleiterelementen
US5627427A (en) * 1991-12-09 1997-05-06 Cornell Research Foundation, Inc. Silicon tip field emission cathodes
US5198390A (en) * 1992-01-16 1993-03-30 Cornell Research Foundation, Inc. RIE process for fabricating submicron, silicon electromechanical structures
US5393375A (en) * 1992-02-03 1995-02-28 Cornell Research Foundation, Inc. Process for fabricating submicron single crystal electromechanical structures
US5179499A (en) * 1992-04-14 1993-01-12 Cornell Research Foundation, Inc. Multi-dimensional precision micro-actuator
JP2776142B2 (ja) * 1992-05-15 1998-07-16 株式会社日立製作所 加速度センサ
US5287082A (en) * 1992-07-02 1994-02-15 Cornell Research Foundation, Inc. Submicron isolated, released resistor structure
US5397904A (en) * 1992-07-02 1995-03-14 Cornell Research Foundation, Inc. Transistor microstructure
EP0683921B1 (en) * 1993-02-04 2004-06-16 Cornell Research Foundation, Inc. Microstructures and single mask, single-crystal process for fabrication thereof
US5399415A (en) * 1993-02-05 1995-03-21 Cornell Research Foundation, Inc. Isolated tungsten microelectromechanical structures
US5386142A (en) * 1993-05-07 1995-01-31 Kulite Semiconductor Products, Inc. Semiconductor structures having environmentally isolated elements and method for making the same
US5426070A (en) * 1993-05-26 1995-06-20 Cornell Research Foundation, Inc. Microstructures and high temperature isolation process for fabrication thereof
US5563343A (en) * 1993-05-26 1996-10-08 Cornell Research Foundation, Inc. Microelectromechanical lateral accelerometer
US5536988A (en) * 1993-06-01 1996-07-16 Cornell Research Foundation, Inc. Compound stage MEM actuator suspended for multidimensional motion
US5363021A (en) * 1993-07-12 1994-11-08 Cornell Research Foundation, Inc. Massively parallel array cathode
US5415726A (en) * 1993-12-21 1995-05-16 Delco Electronics Corporation Method of making a bridge-supported accelerometer structure
US5615143A (en) * 1994-09-19 1997-03-25 Cornell Research Foundation, Inc. Optomechanical terabit data storage system
JP3399660B2 (ja) * 1994-10-06 2003-04-21 株式会社東海理化電機製作所 表面型の加速度センサの製造方法
JP3305516B2 (ja) * 1994-10-31 2002-07-22 株式会社東海理化電機製作所 静電容量式加速度センサ及びその製造方法
US5565625A (en) * 1994-12-01 1996-10-15 Analog Devices, Inc. Sensor with separate actuator and sense fingers
US5659159A (en) * 1994-12-16 1997-08-19 Otis Elevator Company Elevator level control system using elevator/landing gap as a reflection duct
US5628917A (en) * 1995-02-03 1997-05-13 Cornell Research Foundation, Inc. Masking process for fabricating ultra-high aspect ratio, wafer-free micro-opto-electromechanical structures
US5591679A (en) * 1995-04-12 1997-01-07 Sensonor A/S Sealed cavity arrangement method
US6084257A (en) * 1995-05-24 2000-07-04 Lucas Novasensor Single crystal silicon sensor with high aspect ratio and curvilinear structures
US6316796B1 (en) * 1995-05-24 2001-11-13 Lucas Novasensor Single crystal silicon sensor with high aspect ratio and curvilinear structures
US5587601A (en) * 1995-06-05 1996-12-24 Kulite Semiconductor Products, Inc. Support structure for a semiconductor pressure transducer
US5659195A (en) * 1995-06-08 1997-08-19 The Regents Of The University Of California CMOS integrated microsensor with a precision measurement circuit
US5637539A (en) * 1996-01-16 1997-06-10 Cornell Research Foundation, Inc. Vacuum microelectronic devices with multiple planar electrodes
JPH11160352A (ja) * 1997-11-25 1999-06-18 Matsushita Electric Works Ltd 半導体加速度センサの検査装置及びその検査方法
JP3533984B2 (ja) * 1999-03-26 2004-06-07 松下電工株式会社 半導体加速度センサおよびその製造方法
US6912759B2 (en) * 2001-07-20 2005-07-05 Rosemount Aerospace Inc. Method of manufacturing a thin piezo resistive pressure sensor
CA2473836A1 (en) * 2002-02-14 2003-08-21 Silex Microsystems Ab Deflectable microstructure and method of manufacturing the same through bonding of wafers

Also Published As

Publication number Publication date
JP2005268758A (ja) 2005-09-29
US20060101912A1 (en) 2006-05-18
US7223624B2 (en) 2007-05-29
US20050172717A1 (en) 2005-08-11
EP1561724A1 (en) 2005-08-10

Similar Documents

Publication Publication Date Title
JP4871513B2 (ja) 薄く形成されたカンチレバー構造を備えた微小機械装置及び関連の方法
EP2339357B1 (en) Method for fabricating a sensor
US7998777B1 (en) Method for fabricating a sensor
CA2777309C (en) Device for measuring environmental forces and method of fabricating the same
US8435821B2 (en) Sensor and method for fabricating the same
JP5850650B2 (ja) センサ、及びセンサを製造する方法
US6084257A (en) Single crystal silicon sensor with high aspect ratio and curvilinear structures
JP2004245760A (ja) 圧力と加速度との双方を検出するセンサおよびその製造方法
EP0737864A1 (en) Force sensor
JP4628018B2 (ja) 容量型力学量センサとその製造方法
CN119001144B (zh) 一种双量程加速度传感器结构及制作方法
US11459227B2 (en) Hinged microelectromechanical and/or nanoelectromechanical device with out-of-plane movement
French Integrated microsystems in industrial applications
Lpadatu et al. Building of silicon mechanical sensors by bulk micromachining and anodic bonding

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080201

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101118

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20101125

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20101125

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20111101

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20111121

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20141125

Year of fee payment: 3

LAPS Cancellation because of no payment of annual fees