JP4871132B2 - 構造体及びその形成方法 - Google Patents
構造体及びその形成方法 Download PDFInfo
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- JP4871132B2 JP4871132B2 JP2006538466A JP2006538466A JP4871132B2 JP 4871132 B2 JP4871132 B2 JP 4871132B2 JP 2006538466 A JP2006538466 A JP 2006538466A JP 2006538466 A JP2006538466 A JP 2006538466A JP 4871132 B2 JP4871132 B2 JP 4871132B2
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- 238000000034 method Methods 0.000 title claims description 33
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 37
- 239000001301 oxygen Substances 0.000 claims description 37
- 229910052760 oxygen Inorganic materials 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 36
- 239000004020 conductor Substances 0.000 claims description 23
- 229910052782 aluminium Inorganic materials 0.000 claims description 17
- 229910052721 tungsten Inorganic materials 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 98
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 35
- 229920002120 photoresistant polymer Polymers 0.000 description 15
- 230000008569 process Effects 0.000 description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 13
- 238000005530 etching Methods 0.000 description 11
- 238000002161 passivation Methods 0.000 description 10
- 230000007797 corrosion Effects 0.000 description 9
- 238000005260 corrosion Methods 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 230000008859 change Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- 238000005336 cracking Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000007664 blowing Methods 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
- H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
- H01L23/5254—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Description
Claims (13)
- 少なくとも2つのビアを第1誘電体層に形成する工程と、
前記2つのビアを第1自己不活性化導電性材料で充填する工程と、
前記第1誘電体層の上部にヒューズリンク層を形成する工程であって、前記ヒューズリンク層が、レーザビームに当てられた後に電気抵抗を変える特性を持つ第2材料を有する工程と、
第3自己不活性化導電性材料を有するメサ層を前記ヒューズリンク層上に形成する工程と、
前記ヒューズリンク層及び前記メサ層からそれぞれヒューズリンク及び2つのメサを形成する工程とを有する電子構造体の形成方法であって、前記ヒューズリンクが前記2つのビアを電気的に接続し、前記2つのメサが前記2つのビアの真上に位置する、電子構造体の形成方法。 - 前記第2材料が、TaN、TiN及びWNより成る群から選択された物質を含む、請求項1に記載の電子構造体の形成方法。
- 前記第1自己不活性化導電性材料が、Al及びWより成る群から選択された物質を含む、請求項1に記載の電子構造体の形成方法。
- 前記第3自己不活性化導電性材料が、Al及びWより成る群から選択された物質を含む、請求項1に記載の電子構造体の形成方法。
- 前記メサ層を形成する前に、前記ヒューズリンク層の上部に第2誘電体層を形成する工程を更に有する、請求項1に記載の電子構造体の形成方法。
- 前記ヒューズリンクを形成した後、前記ヒューズリンクを雰囲気にさらす工程を更に有する、請求項1に記載の電子構造体の形成方法。
- 第1自己不活性化導電性材料で充填されている少なくとも2つのビアを有する第1誘電体層と、
前記第1誘電体層の上部に位置するヒューズリンクであって、前記ヒューズリンクが前記2つのビアを電気的に接続し、レーザビームに当てられた後に電気抵抗を変える特性を持つ第2材料を有するヒューズリンクと、
前記ヒューズリンク上、並びに前記2つのビアの真上に位置する2つのメサであって、第3自己不活性化導電性材料を各々含む2つのメサとを有する電子構造体。 - 前記第2材料が、TaN、TiN及びWNより成る群から選択された物質を含む、請求項7に記載の電子構造体。
- 前記第1自己不活性化導電性材料が、Al及びWより成る群から選択された物質を含む、請求項7に記載の電子構造体。
- 前記第3自己不活性化導電性材料が、Al及びWより成る群から選択された物質を含む、請求項7に記載の電子構造体。
- 少なくとも第1ビア及び第2ビアを有する第1誘電体層であって、前記第1及び第2ビアの双方とも第1導電性材料で充填されている第1誘電体層と、
前記第1及び第2ビアの真上にそれぞれ位置し、前記第1及び第2ビアの前記第1導電性材料とそれぞれ物理的に接触している第1酸素ゲッタ遮蔽体及び第2酸素ゲッタ遮蔽体であって、第2導電性酸素ゲッタ材料を有する第1酸素ゲッタ遮蔽体及び第2酸素ゲッタ遮蔽体と、
前記第1及び第2酸素ゲッタ遮蔽体を電気的に接続するヒューズリンクであって、レーザビームに当てられた後に電気抵抗を変える特性を持つ第3材料を含むヒューズリンクとを有し、
前記第1及び第2酸素ゲッタ遮蔽体の一部である第1及び第2領域がそれぞれ、前記ヒューズリンク上にあり、前記ヒューズリンクが、前記第1酸素ゲッタ遮蔽体の前記第1領域と前記第1誘電体層との間に配置され、前記第2酸素ゲッタ遮蔽体の前記第2領域と前記第1誘電体層との間に配置される、電子構造体。 - 前記第1及び第2酸素ゲッタ遮蔽体の真上にそれぞれ位置し、前記第1及び第2酸素ゲッタ遮蔽体とそれぞれ物理的に直接接触している第1メサ及び第2メサを更に有し、前記第1メサ及び第2メサが第4導電性材料を有する、請求項11に記載の電子構造体。
- 前記第2導電性酸素ゲッタ材料がチタンを含む、請求項11に記載の電子構造体。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/605,885 US7064409B2 (en) | 2003-11-04 | 2003-11-04 | Structure and programming of laser fuse |
US10/605,885 | 2003-11-04 | ||
PCT/US2004/036660 WO2005048304A2 (en) | 2003-11-04 | 2004-11-04 | Structure and programming of laser fuse |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007515057A JP2007515057A (ja) | 2007-06-07 |
JP4871132B2 true JP4871132B2 (ja) | 2012-02-08 |
Family
ID=34549682
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2006538466A Expired - Fee Related JP4871132B2 (ja) | 2003-11-04 | 2004-11-04 | 構造体及びその形成方法 |
Country Status (6)
Country | Link |
---|---|
US (3) | US7064409B2 (ja) |
EP (1) | EP1687851B1 (ja) |
JP (1) | JP4871132B2 (ja) |
KR (1) | KR100754317B1 (ja) |
CN (1) | CN100499130C (ja) |
WO (1) | WO2005048304A2 (ja) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
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US9652637B2 (en) | 2005-05-23 | 2017-05-16 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Method and system for allowing no code download in a code download scheme |
US7381981B2 (en) * | 2005-07-29 | 2008-06-03 | International Business Machines Corporation | Phase-change TaN resistor based triple-state/multi-state read only memory |
US7768815B2 (en) * | 2005-08-23 | 2010-08-03 | International Business Machines Corporation | Optoelectronic memory devices |
US7701035B2 (en) * | 2005-11-30 | 2010-04-20 | International Business Machines Corporation | Laser fuse structures for high power applications |
US9904809B2 (en) | 2006-02-27 | 2018-02-27 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Method and system for multi-level security initialization and configuration |
US20070290715A1 (en) * | 2006-06-19 | 2007-12-20 | David Baer | Method And System For Using One-Time Programmable (OTP) Read-Only Memory (ROM) To Configure Chip Usage Features |
US9489318B2 (en) | 2006-06-19 | 2016-11-08 | Broadcom Corporation | Method and system for accessing protected memory |
DE102006043484B4 (de) * | 2006-09-15 | 2019-11-28 | Infineon Technologies Ag | Fuse-Struktur und Verfahren zum Herstellen derselben |
US20080308901A1 (en) * | 2007-06-12 | 2008-12-18 | Broadcom Corporation | Integrated circuit having a thin passivation layer that facilitates laser programming, and applications thereof |
KR20090102555A (ko) * | 2008-03-26 | 2009-09-30 | 삼성전자주식회사 | 전기적 퓨즈 소자 및 그 동작방법 |
US9263384B2 (en) * | 2008-05-13 | 2016-02-16 | Infineon Technologies Ag | Programmable devices and methods of manufacture thereof |
JP2010118427A (ja) * | 2008-11-12 | 2010-05-27 | Nec Electronics Corp | 半導体装置および半導体装置の製造方法 |
CN102054816B (zh) * | 2009-11-03 | 2012-05-30 | 中芯国际集成电路制造(上海)有限公司 | 熔丝的熔断方法 |
US8659118B2 (en) * | 2011-07-29 | 2014-02-25 | Infineon Technologies Ag | Semiconductor device comprising a fuse structure and a method for manufacturing such semiconductor device |
US8946000B2 (en) * | 2013-02-22 | 2015-02-03 | Freescale Semiconductor, Inc. | Method for forming an integrated circuit having a programmable fuse |
US10692811B1 (en) * | 2018-12-02 | 2020-06-23 | Nanya Technology Corporation | Semiconductor structure |
US11152568B2 (en) | 2019-06-27 | 2021-10-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Top-electrode barrier layer for RRAM |
US11469178B2 (en) | 2020-12-18 | 2022-10-11 | Globalfoundries U.S. Inc. | Metal-free fuse structures |
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-
2003
- 2003-11-04 US US10/605,885 patent/US7064409B2/en not_active Expired - Lifetime
-
2004
- 2004-11-04 JP JP2006538466A patent/JP4871132B2/ja not_active Expired - Fee Related
- 2004-11-04 CN CNB2004800321736A patent/CN100499130C/zh active Active
- 2004-11-04 KR KR1020067008586A patent/KR100754317B1/ko not_active IP Right Cessation
- 2004-11-04 EP EP04810291.7A patent/EP1687851B1/en active Active
- 2004-11-04 WO PCT/US2004/036660 patent/WO2005048304A2/en active Application Filing
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2006
- 2006-02-27 US US11/362,680 patent/US7384824B2/en active Active
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2008
- 2008-04-18 US US12/105,366 patent/US7981732B2/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6084835A (ja) * | 1983-10-17 | 1985-05-14 | Hitachi Ltd | ヒユ−ズ処理方法 |
JPH07283318A (ja) * | 1994-02-21 | 1995-10-27 | Ricoh Co Ltd | 半導体装置及び半導体装置の製造方法 |
JPH08236632A (ja) * | 1995-02-27 | 1996-09-13 | Sony Corp | 半導体装置 |
JPH08321549A (ja) * | 1995-05-24 | 1996-12-03 | Matsushita Electron Corp | 半導体装置 |
JPH1027797A (ja) * | 1996-07-10 | 1998-01-27 | Oki Electric Ind Co Ltd | Al/Ti積層配線およびその形成方法 |
JP2000225479A (ja) * | 1999-01-16 | 2000-08-15 | Koninkl Philips Electronics Nv | 受動型電子素子を微調整する方法 |
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US7384824B2 (en) | 2008-06-10 |
WO2005048304A2 (en) | 2005-05-26 |
EP1687851A4 (en) | 2011-02-23 |
WO2005048304A3 (en) | 2005-07-28 |
US7981732B2 (en) | 2011-07-19 |
US20050093091A1 (en) | 2005-05-05 |
CN100499130C (zh) | 2009-06-10 |
JP2007515057A (ja) | 2007-06-07 |
CN1875485A (zh) | 2006-12-06 |
KR20060115736A (ko) | 2006-11-09 |
US7064409B2 (en) | 2006-06-20 |
EP1687851B1 (en) | 2013-08-07 |
KR100754317B1 (ko) | 2007-09-03 |
US20080194064A1 (en) | 2008-08-14 |
US20060145291A1 (en) | 2006-07-06 |
EP1687851A2 (en) | 2006-08-09 |
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