JP4869504B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4869504B2
JP4869504B2 JP2001194326A JP2001194326A JP4869504B2 JP 4869504 B2 JP4869504 B2 JP 4869504B2 JP 2001194326 A JP2001194326 A JP 2001194326A JP 2001194326 A JP2001194326 A JP 2001194326A JP 4869504 B2 JP4869504 B2 JP 4869504B2
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JP
Japan
Prior art keywords
film
semiconductor film
amorphous semiconductor
silicon
layer
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Expired - Fee Related
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JP2001194326A
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English (en)
Japanese (ja)
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JP2002093705A5 (OSRAM
JP2002093705A (ja
Inventor
舜平 山崎
亨 三津木
健司 笠原
勇臣 浅見
圭恵 高野
武司 志知
千穂 小久保
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2001194326A priority Critical patent/JP4869504B2/ja
Publication of JP2002093705A publication Critical patent/JP2002093705A/ja
Publication of JP2002093705A5 publication Critical patent/JP2002093705A5/ja
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Publication of JP4869504B2 publication Critical patent/JP4869504B2/ja
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  • Liquid Crystal (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2001194326A 2000-06-27 2001-06-27 半導体装置の作製方法 Expired - Fee Related JP4869504B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001194326A JP4869504B2 (ja) 2000-06-27 2001-06-27 半導体装置の作製方法

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2000-193523 2000-06-27
JP2000193612 2000-06-27
JP2000193612 2000-06-27
JP2000193523 2000-06-27
JP2000193523 2000-06-27
JP2000-193612 2000-06-27
JP2001194326A JP4869504B2 (ja) 2000-06-27 2001-06-27 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2002093705A JP2002093705A (ja) 2002-03-29
JP2002093705A5 JP2002093705A5 (OSRAM) 2008-07-31
JP4869504B2 true JP4869504B2 (ja) 2012-02-08

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Family Applications (1)

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JP2001194326A Expired - Fee Related JP4869504B2 (ja) 2000-06-27 2001-06-27 半導体装置の作製方法

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JP (1) JP4869504B2 (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11502217B1 (en) 2021-05-24 2022-11-15 Gautam Ganguly Methods and apparatus for reducing as-deposited and metastable defects in Amorphousilicon

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004054168A (ja) * 2002-07-24 2004-02-19 Hitachi Ltd 画像表示装置
JP4464078B2 (ja) * 2003-06-20 2010-05-19 株式会社 日立ディスプレイズ 画像表示装置
JP2007293072A (ja) * 2006-04-26 2007-11-08 Epson Imaging Devices Corp 電気光学装置の製造方法、電気光学装置および電子機器
KR100818285B1 (ko) * 2006-11-17 2008-04-01 삼성전자주식회사 단결정 실리콘 로드 제조방법
US7972943B2 (en) * 2007-03-02 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8003498B2 (en) * 2007-11-13 2011-08-23 Varian Semiconductor Equipment Associates, Inc. Particle beam assisted modification of thin film materials
JP5182993B2 (ja) * 2008-03-31 2013-04-17 株式会社半導体エネルギー研究所 表示装置及びその作製方法
JP5663231B2 (ja) * 2009-08-07 2015-02-04 株式会社半導体エネルギー研究所 発光装置
JP5476566B2 (ja) * 2009-09-01 2014-04-23 独立行政法人物質・材料研究機構 酸化アルミニウム薄膜を用いたスイッチング素子とこれを有する電子回路
KR101926646B1 (ko) * 2010-04-16 2018-12-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 축전 장치용 전극 및 그 제작 방법
TWI666623B (zh) 2013-07-10 2019-07-21 日商半導體能源研究所股份有限公司 半導體裝置、驅動器電路及顯示裝置
JP7341052B2 (ja) * 2019-12-26 2023-09-08 東京エレクトロン株式会社 膜形成方法及び膜形成装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0521798A (ja) * 1991-02-18 1993-01-29 Alps Electric Co Ltd 薄膜トランジスタ
JPH05109737A (ja) * 1991-10-18 1993-04-30 Casio Comput Co Ltd 薄膜トランジスタの製造方法
JP3540012B2 (ja) * 1994-06-07 2004-07-07 株式会社半導体エネルギー研究所 半導体装置作製方法
JP3727387B2 (ja) * 1994-09-29 2005-12-14 株式会社半導体エネルギー研究所 結晶性珪素膜の作製方法、デバイス、液晶表示装置、薄膜トランジスタおよび電子機器
JP3204489B2 (ja) * 1995-09-19 2001-09-04 シャープ株式会社 半導体装置の製造方法
JP3587031B2 (ja) * 1997-10-27 2004-11-10 ソニー株式会社 半導体装置の製造方法
JP3980159B2 (ja) * 1998-03-05 2007-09-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4115585B2 (ja) * 1998-03-27 2008-07-09 株式会社半導体エネルギー研究所 半導体装置の作製方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11502217B1 (en) 2021-05-24 2022-11-15 Gautam Ganguly Methods and apparatus for reducing as-deposited and metastable defects in Amorphousilicon
WO2022250818A1 (en) * 2021-05-24 2022-12-01 Gautam Ganguly Methods and apparatus for reducing as-deposited and metastable defects in amorphous silicon

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JP2002093705A (ja) 2002-03-29

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