JP4867028B2 - 画素読み出しスイッチ・コンデンサ・バッファ回路およびその方法 - Google Patents

画素読み出しスイッチ・コンデンサ・バッファ回路およびその方法 Download PDF

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Publication number
JP4867028B2
JP4867028B2 JP2001015150A JP2001015150A JP4867028B2 JP 4867028 B2 JP4867028 B2 JP 4867028B2 JP 2001015150 A JP2001015150 A JP 2001015150A JP 2001015150 A JP2001015150 A JP 2001015150A JP 4867028 B2 JP4867028 B2 JP 4867028B2
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capacitor
amplifier
coupled
terminal
pixel
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Japanese (ja)
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JP2001245210A5 (enExample
JP2001245210A (ja
Inventor
アンドレア・ニーダーコーン
スハイル・アグワニ
デビット・ロカスチオ
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インテレクチュアル ベンチャーズ セカンド エルエルシー
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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H04N25/677Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction for reducing the column or line fixed pattern noise
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2001015150A 2000-01-24 2001-01-24 画素読み出しスイッチ・コンデンサ・バッファ回路およびその方法 Expired - Fee Related JP4867028B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US490238 2000-01-24
US09/490,238 US6423961B1 (en) 2000-01-24 2000-01-24 Pixel readout switched capacitor buffer circuit and method therefor

Publications (3)

Publication Number Publication Date
JP2001245210A JP2001245210A (ja) 2001-09-07
JP2001245210A5 JP2001245210A5 (enExample) 2008-03-06
JP4867028B2 true JP4867028B2 (ja) 2012-02-01

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JP2001015150A Expired - Fee Related JP4867028B2 (ja) 2000-01-24 2001-01-24 画素読み出しスイッチ・コンデンサ・バッファ回路およびその方法

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US (1) US6423961B1 (enExample)
JP (1) JP4867028B2 (enExample)
IL (1) IL140599A (enExample)
TW (1) TW508943B (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030151689A1 (en) * 2002-02-11 2003-08-14 Murphy Charles Douglas Digital images with composite exposure
US6791378B2 (en) * 2002-08-19 2004-09-14 Micron Technology, Inc. Charge recycling amplifier for a high dynamic range CMOS imager
US7388608B2 (en) * 2004-03-11 2008-06-17 Micron Technology, Inc. Sample and hold circuit and active pixel sensor array sampling system utilizing same
US20050200730A1 (en) * 2004-03-11 2005-09-15 Beck Jeffery S. Active pixel sensor array sampling system and method
JP5257176B2 (ja) * 2009-03-18 2013-08-07 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法および電子機器
US9200956B2 (en) * 2010-06-27 2015-12-01 Sri International Readout transistor circuits for CMOS imagers
CN103684408A (zh) * 2013-12-18 2014-03-26 苏州纳芯微电子有限公司 电容式传感器接口电路
WO2019227067A1 (en) * 2018-05-24 2019-11-28 Gigajot Technology Llc Image sensor having column-level correlated-double-sampling charge transfer amplifier

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1086578A4 (en) * 1998-03-16 2001-09-26 California Inst Of Techn CMOS INTEGRATION SENSOR WITH FULL DIFFERENTIAL COLUMN READING CIRCUIT FOR IMAGING BRIGHTNESS ADAPTIVES
US6128039A (en) * 1999-01-11 2000-10-03 Omnivision Technologies, Inc. Column amplifier for high fixed pattern noise reduction

Also Published As

Publication number Publication date
IL140599A (en) 2005-09-25
IL140599A0 (en) 2002-02-10
US6423961B1 (en) 2002-07-23
TW508943B (en) 2002-11-01
JP2001245210A (ja) 2001-09-07

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