JP4864202B2 - 単一電荷キャリアトランジスタ、量子ドット内に電荷キャリアを保持する方法、及び検出方法 - Google Patents

単一電荷キャリアトランジスタ、量子ドット内に電荷キャリアを保持する方法、及び検出方法 Download PDF

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JP4864202B2
JP4864202B2 JP2000555299A JP2000555299A JP4864202B2 JP 4864202 B2 JP4864202 B2 JP 4864202B2 JP 2000555299 A JP2000555299 A JP 2000555299A JP 2000555299 A JP2000555299 A JP 2000555299A JP 4864202 B2 JP4864202 B2 JP 4864202B2
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transistor
layer
heterojunction
gate electrode
gate
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JP2002518850A5 (enExample
JP2002518850A (ja
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ジョン ヘンリー ジェファーソン
ティモシー ジョナサン フィリップス
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Qinetiq Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/014—Manufacture or treatment of FETs having zero-dimensional [0D] or one-dimensional [1D] channels, e.g. quantum wire FETs, single-electron transistors [SET] or Coulomb blockade transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/402—Single electron transistors; Coulomb blockade transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/43—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 1D charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/812—Single quantum well structures
    • H10D62/813—Quantum wire structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/812—Single quantum well structures
    • H10D62/814—Quantum box structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
    • Y10S977/937—Single electron transistor

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
JP2000555299A 1998-06-19 1999-06-18 単一電荷キャリアトランジスタ、量子ドット内に電荷キャリアを保持する方法、及び検出方法 Expired - Fee Related JP4864202B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB9813142.8 1998-06-19
GB9813142A GB2338592A (en) 1998-06-19 1998-06-19 Single electron transistor
PCT/GB1999/001885 WO1999066561A1 (en) 1998-06-19 1999-06-18 Single charge carrier transistor, method of holding a charge carrier within a quantum dot, and method of detection

Publications (3)

Publication Number Publication Date
JP2002518850A JP2002518850A (ja) 2002-06-25
JP2002518850A5 JP2002518850A5 (enExample) 2006-08-10
JP4864202B2 true JP4864202B2 (ja) 2012-02-01

Family

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Family Applications (2)

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JP2000555300A Abandoned JP2002518851A (ja) 1998-06-19 1999-06-18 量子ワイヤー電界効果トランジスタ及びその製造方法
JP2000555299A Expired - Fee Related JP4864202B2 (ja) 1998-06-19 1999-06-18 単一電荷キャリアトランジスタ、量子ドット内に電荷キャリアを保持する方法、及び検出方法

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JP2000555300A Abandoned JP2002518851A (ja) 1998-06-19 1999-06-18 量子ワイヤー電界効果トランジスタ及びその製造方法

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Country Link
US (2) US6753593B1 (enExample)
EP (2) EP1088346A1 (enExample)
JP (2) JP2002518851A (enExample)
GB (1) GB2338592A (enExample)
WO (2) WO1999066561A1 (enExample)

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US6978070B1 (en) * 2001-08-14 2005-12-20 The Programmable Matter Corporation Fiber incorporating quantum dots as programmable dopants
JP4334246B2 (ja) 2003-02-27 2009-09-30 富士通株式会社 量子半導体装置及びその製造方法
JP4304338B2 (ja) * 2004-01-13 2009-07-29 独立行政法人産業技術総合研究所 光検出素子
CN101065845A (zh) 2004-06-04 2007-10-31 可编程物公司 包含作为可编程掺杂剂的量子点的层状复合薄膜
US7465595B2 (en) 2004-11-09 2008-12-16 Fujitsu Limited Quantum device, manufacturing method of the same and controlling method of the same
KR101045573B1 (ko) * 2005-07-06 2011-07-01 인터내쇼널 렉티파이어 코포레이션 Ⅲ족 질화물 인헨스먼트 모드 소자
US7358581B2 (en) * 2005-11-17 2008-04-15 Kulite Semiconductor Products, Inc. Quantum dot based pressure switch
US20070194297A1 (en) * 2006-02-17 2007-08-23 The Programmable Matter Corporation Quantum Dot Switching Device
US7601946B2 (en) * 2006-09-12 2009-10-13 Ravenbrick, Llc Electromagnetic sensor incorporating quantum confinement structures
US7768693B2 (en) 2007-01-24 2010-08-03 Ravenbrick Llc Thermally switched optical downconverting filter
US8363307B2 (en) * 2007-02-28 2013-01-29 Ravenbrick, Llc Multicolor light emitting device incorporating tunable quantum confinement devices
US7936500B2 (en) * 2007-03-02 2011-05-03 Ravenbrick Llc Wavelength-specific optical switch
EP2171520A4 (en) 2007-07-11 2011-09-07 Ravenbrick Llc REFLECTIVE OPTICAL SHUTTER WITH THERMAL SWITCHING
WO2009039423A1 (en) 2007-09-19 2009-03-26 Ravenbrick, Llc Low-emissivity window films and coatings incoporating nanoscale wire grids
US8169685B2 (en) 2007-12-20 2012-05-01 Ravenbrick, Llc Thermally switched absorptive window shutter
US8634137B2 (en) 2008-04-23 2014-01-21 Ravenbrick Llc Glare management of reflective and thermoreflective surfaces
US9116302B2 (en) 2008-06-19 2015-08-25 Ravenbrick Llc Optical metapolarizer device
CA2737041C (en) 2008-08-20 2013-10-15 Ravenbrick, Llc Methods for fabricating thermochromic filters
CN102460238A (zh) 2009-04-10 2012-05-16 雷文布里克有限责任公司 结合有宾主型结构的热切换滤光器
US8643795B2 (en) 2009-04-10 2014-02-04 Ravenbrick Llc Thermally switched optical filter incorporating a refractive optical structure
US8867132B2 (en) * 2009-10-30 2014-10-21 Ravenbrick Llc Thermochromic filters and stopband filters for use with same
AU2011235265A1 (en) 2010-03-29 2012-10-25 Ravenbrick Llc Polymer-stabilized thermotropic liquid crystal device
GB2480265B (en) * 2010-05-10 2013-10-02 Toshiba Res Europ Ltd A semiconductor device and a method of fabricating a semiconductor device
WO2011153214A2 (en) 2010-06-01 2011-12-08 Ravenbrick Llc Multifunctional building component
US8933488B2 (en) * 2010-12-03 2015-01-13 The Board Of Trustees Of The Leland Stanford Junior Univerity Heterostructure field effect transistor with same channel and barrier configuration for PMOS and NMOS
WO2013033608A2 (en) 2011-09-01 2013-03-07 Wil Mccarthy Thermotropic optical shutter incorporating coatable polarizers
US9859409B2 (en) * 2016-04-28 2018-01-02 International Business Machines Corporation Single-electron transistor with wrap-around gate

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JPH08264750A (ja) * 1995-03-20 1996-10-11 Fujitsu Ltd 量子半導体装置
US5654558A (en) * 1994-11-14 1997-08-05 The United States Of America As Represented By The Secretary Of The Navy Interband lateral resonant tunneling transistor
JPH1093109A (ja) * 1996-09-13 1998-04-10 Nippon Telegr & Teleph Corp <Ntt> クーロンブロッケイド素子とその製造方法

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JPH0864525A (ja) * 1994-08-23 1996-03-08 Hitachi Ltd 結晶粒の形成方法および半導体装置
US5654558A (en) * 1994-11-14 1997-08-05 The United States Of America As Represented By The Secretary Of The Navy Interband lateral resonant tunneling transistor
JPH08264750A (ja) * 1995-03-20 1996-10-11 Fujitsu Ltd 量子半導体装置
JPH1093109A (ja) * 1996-09-13 1998-04-10 Nippon Telegr & Teleph Corp <Ntt> クーロンブロッケイド素子とその製造方法

Also Published As

Publication number Publication date
JP2002518851A (ja) 2002-06-25
EP1088347A1 (en) 2001-04-04
US6753593B1 (en) 2004-06-22
WO1999066561A1 (en) 1999-12-23
WO1999066562A1 (en) 1999-12-23
US6498354B1 (en) 2002-12-24
GB2338592A (en) 1999-12-22
EP1088346A1 (en) 2001-04-04
EP1088347B1 (en) 2011-11-23
GB9813142D0 (en) 1998-08-19
JP2002518850A (ja) 2002-06-25

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