JP2002518850A5 - - Google Patents
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- Publication number
- JP2002518850A5 JP2002518850A5 JP2000555299A JP2000555299A JP2002518850A5 JP 2002518850 A5 JP2002518850 A5 JP 2002518850A5 JP 2000555299 A JP2000555299 A JP 2000555299A JP 2000555299 A JP2000555299 A JP 2000555299A JP 2002518850 A5 JP2002518850 A5 JP 2002518850A5
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- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9813142A GB2338592A (en) | 1998-06-19 | 1998-06-19 | Single electron transistor |
| GB9813142.8 | 1998-06-19 | ||
| PCT/GB1999/001885 WO1999066561A1 (en) | 1998-06-19 | 1999-06-18 | Single charge carrier transistor, method of holding a charge carrier within a quantum dot, and method of detection |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002518850A JP2002518850A (ja) | 2002-06-25 |
| JP2002518850A5 true JP2002518850A5 (enExample) | 2006-08-10 |
| JP4864202B2 JP4864202B2 (ja) | 2012-02-01 |
Family
ID=10833967
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000555299A Expired - Fee Related JP4864202B2 (ja) | 1998-06-19 | 1999-06-18 | 単一電荷キャリアトランジスタ、量子ドット内に電荷キャリアを保持する方法、及び検出方法 |
| JP2000555300A Abandoned JP2002518851A (ja) | 1998-06-19 | 1999-06-18 | 量子ワイヤー電界効果トランジスタ及びその製造方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000555300A Abandoned JP2002518851A (ja) | 1998-06-19 | 1999-06-18 | 量子ワイヤー電界効果トランジスタ及びその製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US6753593B1 (enExample) |
| EP (2) | EP1088346A1 (enExample) |
| JP (2) | JP4864202B2 (enExample) |
| GB (1) | GB2338592A (enExample) |
| WO (2) | WO1999066561A1 (enExample) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6683337B2 (en) | 2001-02-09 | 2004-01-27 | Micron Technology, Inc. | Dynamic memory based on single electron storage |
| CA2447728A1 (en) * | 2001-05-18 | 2003-01-16 | President And Fellows Of Harvard College | Nanoscale wires and related devices |
| US6978070B1 (en) * | 2001-08-14 | 2005-12-20 | The Programmable Matter Corporation | Fiber incorporating quantum dots as programmable dopants |
| JP4334246B2 (ja) | 2003-02-27 | 2009-09-30 | 富士通株式会社 | 量子半導体装置及びその製造方法 |
| JP4304338B2 (ja) * | 2004-01-13 | 2009-07-29 | 独立行政法人産業技術総合研究所 | 光検出素子 |
| CA2568536A1 (en) * | 2004-06-04 | 2005-12-22 | The Programmable Matter Corporation | Layered composite film incorporating quantum dots as programmable dopants |
| US7465595B2 (en) | 2004-11-09 | 2008-12-16 | Fujitsu Limited | Quantum device, manufacturing method of the same and controlling method of the same |
| US7759699B2 (en) * | 2005-07-06 | 2010-07-20 | International Rectifier Corporation | III-nitride enhancement mode devices |
| US7358581B2 (en) * | 2005-11-17 | 2008-04-15 | Kulite Semiconductor Products, Inc. | Quantum dot based pressure switch |
| US20070194297A1 (en) * | 2006-02-17 | 2007-08-23 | The Programmable Matter Corporation | Quantum Dot Switching Device |
| US7601946B2 (en) * | 2006-09-12 | 2009-10-13 | Ravenbrick, Llc | Electromagnetic sensor incorporating quantum confinement structures |
| DK2106560T3 (en) | 2007-01-24 | 2017-08-07 | Ravenbrick Llc | THERMAL REPLACED OPTICAL DOWN CONVERTER FILTER |
| US8363307B2 (en) * | 2007-02-28 | 2013-01-29 | Ravenbrick, Llc | Multicolor light emitting device incorporating tunable quantum confinement devices |
| US7936500B2 (en) * | 2007-03-02 | 2011-05-03 | Ravenbrick Llc | Wavelength-specific optical switch |
| CA2970259C (en) | 2007-07-11 | 2018-11-06 | Ravenbrick, Llc | Thermally switched reflective optical shutter |
| CA2703010A1 (en) | 2007-09-19 | 2009-03-26 | Ravenbrick, Llc | Low-emissivity window films and coatings incorporating nanoscale wire grids |
| US8169685B2 (en) | 2007-12-20 | 2012-05-01 | Ravenbrick, Llc | Thermally switched absorptive window shutter |
| EP2269100A4 (en) | 2008-04-23 | 2011-12-28 | Ravenbrick Llc | HANDLING OF GLOSSY ON REFLECTIVE AND THERMO-THINKING SURFACES |
| US9116302B2 (en) | 2008-06-19 | 2015-08-25 | Ravenbrick Llc | Optical metapolarizer device |
| KR101331058B1 (ko) | 2008-08-20 | 2013-11-20 | 라벤브릭 엘엘씨 | 열변색 필터를 제조하는 방법 |
| WO2010118422A2 (en) | 2009-04-10 | 2010-10-14 | Ravenbrick, Llc | Thermally switched optical filter incorporating a guest-host architecture |
| US8947760B2 (en) | 2009-04-23 | 2015-02-03 | Ravenbrick Llc | Thermotropic optical shutter incorporating coatable polarizers |
| WO2011053853A2 (en) * | 2009-10-30 | 2011-05-05 | Ravenbrick Llc | Thermochromic filters and stopband filters for use with same |
| WO2011062708A2 (en) | 2009-11-17 | 2011-05-26 | Ravenbrick Llc | Thermally switched optical filter incorporating a refractive optical structure |
| JP5890390B2 (ja) | 2010-03-29 | 2016-03-22 | レイブンブリック，エルエルシー | ポリマ安定化型サーモトロピック液晶デバイス |
| GB2480265B (en) * | 2010-05-10 | 2013-10-02 | Toshiba Res Europ Ltd | A semiconductor device and a method of fabricating a semiconductor device |
| CA2801399C (en) | 2010-06-01 | 2016-03-29 | Ravenbrick, Llc | Multifunctional building component |
| US8933488B2 (en) * | 2010-12-03 | 2015-01-13 | The Board Of Trustees Of The Leland Stanford Junior Univerity | Heterostructure field effect transistor with same channel and barrier configuration for PMOS and NMOS |
| US9859409B2 (en) * | 2016-04-28 | 2018-01-02 | International Business Machines Corporation | Single-electron transistor with wrap-around gate |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1315865C (en) | 1988-02-09 | 1993-04-06 | Elyahou Kapon | Semiconductor super lattice heterostructure fabrication methods, structures and devices |
| US5497015A (en) | 1988-11-12 | 1996-03-05 | Sony Corporation | Quantum interference transistor |
| EP0386388A1 (en) | 1989-03-10 | 1990-09-12 | International Business Machines Corporation | Method for the epitaxial growth of a semiconductor structure |
| EP0661733A2 (en) * | 1993-12-21 | 1995-07-05 | International Business Machines Corporation | One dimensional silicon quantum wire devices and the method of manufacture thereof |
| GB2288274A (en) * | 1994-03-31 | 1995-10-11 | Sharp Kk | Quantum device and method of making such a device |
| JPH07326730A (ja) * | 1994-05-31 | 1995-12-12 | Mitsubishi Electric Corp | 半導体装置，その製造方法，単一電子デバイス，及びその製造方法 |
| JP3256091B2 (ja) * | 1994-08-23 | 2002-02-12 | 株式会社日立製作所 | 結晶粒の形成方法および半導体装置 |
| US5654558A (en) | 1994-11-14 | 1997-08-05 | The United States Of America As Represented By The Secretary Of The Navy | Interband lateral resonant tunneling transistor |
| GB2295272B (en) | 1994-11-15 | 1998-01-14 | Toshiba Cambridge Res Center | Semiconductor device |
| JP3837674B2 (ja) * | 1995-03-20 | 2006-10-25 | 富士通株式会社 | 量子半導体装置 |
| DE19522351A1 (de) * | 1995-06-20 | 1997-01-09 | Max Planck Gesellschaft | Verfahren zur Herstellung von Quantenstrukturen, insbesondere von Quantenpunkten und Tunnelbarrieren sowie Bauelemente mit solchen Quantenstrukturen |
| JPH1093109A (ja) * | 1996-09-13 | 1998-04-10 | Nippon Telegr & Teleph Corp <Ntt> | クーロンブロッケイド素子とその製造方法 |
| US5945686A (en) * | 1997-04-28 | 1999-08-31 | Hitachi, Ltd. | Tunneling electronic device |
| KR100240629B1 (ko) * | 1997-08-30 | 2000-01-15 | 정선종 | 테라급 집적이 가능한 대전효과 트랜지스터 및 그 제조방법 |
| KR19990024760A (ko) * | 1997-09-08 | 1999-04-06 | 정선종 | 양자세선 제조 방법 |
| US6063688A (en) * | 1997-09-29 | 2000-05-16 | Intel Corporation | Fabrication of deep submicron structures and quantum wire transistors using hard-mask transistor width definition |
-
1998
- 1998-06-19 GB GB9813142A patent/GB2338592A/en not_active Withdrawn
-
1999
- 1999-06-18 US US09/701,884 patent/US6753593B1/en not_active Expired - Lifetime
- 1999-06-18 WO PCT/GB1999/001885 patent/WO1999066561A1/en not_active Ceased
- 1999-06-18 JP JP2000555299A patent/JP4864202B2/ja not_active Expired - Fee Related
- 1999-06-18 EP EP99928062A patent/EP1088346A1/en not_active Withdrawn
- 1999-06-18 US US09/719,484 patent/US6498354B1/en not_active Expired - Fee Related
- 1999-06-18 EP EP99957113A patent/EP1088347B1/en not_active Expired - Lifetime
- 1999-06-18 JP JP2000555300A patent/JP2002518851A/ja not_active Abandoned
- 1999-06-18 WO PCT/GB1999/001940 patent/WO1999066562A1/en not_active Ceased