JP4863844B2 - 電圧切替回路 - Google Patents

電圧切替回路 Download PDF

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Publication number
JP4863844B2
JP4863844B2 JP2006302215A JP2006302215A JP4863844B2 JP 4863844 B2 JP4863844 B2 JP 4863844B2 JP 2006302215 A JP2006302215 A JP 2006302215A JP 2006302215 A JP2006302215 A JP 2006302215A JP 4863844 B2 JP4863844 B2 JP 4863844B2
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JP
Japan
Prior art keywords
voltage
level
terminal
transistor
output
Prior art date
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Application number
JP2006302215A
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English (en)
Japanese (ja)
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JP2008118582A (ja
Inventor
智博 岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2006302215A priority Critical patent/JP4863844B2/ja
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to US12/513,976 priority patent/US7911259B2/en
Priority to CN2007800492150A priority patent/CN101573869B/zh
Priority to PCT/JP2007/071657 priority patent/WO2008056712A1/ja
Priority to EP20070831388 priority patent/EP2091153B1/en
Priority to KR1020097009470A priority patent/KR101221177B1/ko
Priority to TW96142625A priority patent/TWI421664B/zh
Publication of JP2008118582A publication Critical patent/JP2008118582A/ja
Application granted granted Critical
Publication of JP4863844B2 publication Critical patent/JP4863844B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0013—Arrangements for reducing power consumption in field effect transistor circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0018—Special modifications or use of the back gate voltage of a FET

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2006302215A 2006-11-08 2006-11-08 電圧切替回路 Active JP4863844B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2006302215A JP4863844B2 (ja) 2006-11-08 2006-11-08 電圧切替回路
CN2007800492150A CN101573869B (zh) 2006-11-08 2007-11-07 电压切换电路
PCT/JP2007/071657 WO2008056712A1 (fr) 2006-11-08 2007-11-07 Circuit de mise en marche et d'arrêt de tension
EP20070831388 EP2091153B1 (en) 2006-11-08 2007-11-07 Voltage switching circuit
US12/513,976 US7911259B2 (en) 2006-11-08 2007-11-07 Voltage switching circuit
KR1020097009470A KR101221177B1 (ko) 2006-11-08 2007-11-07 전압 전환 회로
TW96142625A TWI421664B (zh) 2006-11-08 2007-11-08 Voltage switching circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006302215A JP4863844B2 (ja) 2006-11-08 2006-11-08 電圧切替回路

Publications (2)

Publication Number Publication Date
JP2008118582A JP2008118582A (ja) 2008-05-22
JP4863844B2 true JP4863844B2 (ja) 2012-01-25

Family

ID=39364526

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006302215A Active JP4863844B2 (ja) 2006-11-08 2006-11-08 電圧切替回路

Country Status (7)

Country Link
US (1) US7911259B2 (zh)
EP (1) EP2091153B1 (zh)
JP (1) JP4863844B2 (zh)
KR (1) KR101221177B1 (zh)
CN (1) CN101573869B (zh)
TW (1) TWI421664B (zh)
WO (1) WO2008056712A1 (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103181079B (zh) * 2010-10-27 2016-01-13 飞思卡尔半导体公司 电压切换电路、集成器件和集成电路、以及电压切换的方法
US8494173B2 (en) * 2011-10-28 2013-07-23 Gn Resound A/S Integrated circuit with configurable output cell
JP5988062B2 (ja) * 2012-09-06 2016-09-07 パナソニックＩｐマネジメント株式会社 半導体集積回路
KR102208313B1 (ko) * 2014-10-30 2021-01-27 삼성전자주식회사 디스플레이 시스템 및 변환 장치
JP6498465B2 (ja) * 2015-02-09 2019-04-10 エイブリック株式会社 電源切替回路及び半導体装置
US9847133B2 (en) * 2016-01-19 2017-12-19 Ememory Technology Inc. Memory array capable of performing byte erase operation
US10063225B1 (en) * 2017-06-11 2018-08-28 Nanya Technology Corporation Voltage switching device and method
CN111342541B (zh) * 2018-12-19 2021-04-16 智原微电子(苏州)有限公司 电源切换电路
US10924112B2 (en) * 2019-04-11 2021-02-16 Ememory Technology Inc. Bandgap reference circuit
TWI792692B (zh) * 2021-11-18 2023-02-11 力晶積成電子製造股份有限公司 三態高壓開關電路

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1232973B (it) * 1987-12-01 1992-03-11 Sgs Microelettronica Spa Dispositivo di commutazione dell'alimentazione di tensione per memorie non volatili in tecnologia mos
US5157280A (en) * 1991-02-13 1992-10-20 Texas Instruments Incorporated Switch for selectively coupling a power supply to a power bus
JPH05258584A (ja) * 1992-03-11 1993-10-08 Sharp Corp 電源切換回路
US5331228A (en) * 1992-07-31 1994-07-19 Sgs-Thomson Microelectronics, Inc. Output driver circuit
US5430403A (en) * 1993-09-20 1995-07-04 Micrel, Inc. Field effect transistor with switchable body to source connection
TW295745B (zh) * 1995-04-26 1997-01-11 Matsushita Electric Ind Co Ltd
JP4354539B2 (ja) * 1995-12-20 2009-10-28 テキサス インスツルメンツ インコーポレイテツド Ｍｏｓトランジスタのボディ効果の制御
US5708581A (en) 1996-07-12 1998-01-13 Hewlett-Packard Company Method for maximizing feedforward orthogonality for minimizing servo system nuller instability
JP3648975B2 (ja) 1998-02-27 2005-05-18 セイコーエプソン株式会社 半導体記憶装置及びそれを用いた半導体装置
DE69823982D1 (de) * 1998-05-29 2004-06-24 St Microelectronics Srl Monolithisch integrierter Umschalter für elektrisch programmierbare Speicherzellenvorrichtungen
TW395096B (en) * 1998-08-13 2000-06-21 Winbond Electronics Corp Current switching circuit applying in a digital-to-analog converter and the method thereof
JP4090231B2 (ja) * 2001-11-01 2008-05-28 株式会社ルネサステクノロジ 半導体集積回路装置
JP4321678B2 (ja) * 2003-08-20 2009-08-26 パナソニック株式会社 半導体集積回路
KR100549872B1 (ko) * 2003-12-10 2006-02-06 삼성전자주식회사 차동 스위칭 회로 및 디지털 아날로그 변환기
KR100607349B1 (ko) * 2004-08-26 2006-07-28 주식회사 하이닉스반도체 반도체 장치의 고전압 스위치 회로
KR100735010B1 (ko) * 2005-09-08 2007-07-03 삼성전자주식회사 플래시 메모리 장치 및 그것을 위한 전압 발생회로
JP2008153415A (ja) * 2006-12-18 2008-07-03 Renesas Technology Corp 半導体集積回路およびその製造方法
JP2009141640A (ja) * 2007-12-06 2009-06-25 Seiko Instruments Inc 電源切換回路
US7639041B1 (en) * 2008-07-28 2009-12-29 Altera Corporation Hotsocket-compatible body bias circuitry with power-up current reduction capabilities

Also Published As

Publication number Publication date
WO2008056712A1 (fr) 2008-05-15
TW200837524A (en) 2008-09-16
CN101573869A (zh) 2009-11-04
KR101221177B1 (ko) 2013-01-10
EP2091153A1 (en) 2009-08-19
JP2008118582A (ja) 2008-05-22
KR20090080067A (ko) 2009-07-23
TWI421664B (zh) 2014-01-01
EP2091153A4 (en) 2011-06-08
EP2091153B1 (en) 2012-06-20
US7911259B2 (en) 2011-03-22
CN101573869B (zh) 2012-11-28
US20100013547A1 (en) 2010-01-21

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