JP4862903B2 - 基板処理装置、濾材の再生方法及び記憶媒体 - Google Patents

基板処理装置、濾材の再生方法及び記憶媒体 Download PDF

Info

Publication number
JP4862903B2
JP4862903B2 JP2009053925A JP2009053925A JP4862903B2 JP 4862903 B2 JP4862903 B2 JP 4862903B2 JP 2009053925 A JP2009053925 A JP 2009053925A JP 2009053925 A JP2009053925 A JP 2009053925A JP 4862903 B2 JP4862903 B2 JP 4862903B2
Authority
JP
Japan
Prior art keywords
filter medium
unit
drying
gas
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009053925A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010212293A (ja
JP2010212293A5 (enExample
Inventor
宏展 百武
英樹 西村
裕司 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2009053925A priority Critical patent/JP4862903B2/ja
Priority to KR1020100015653A priority patent/KR101315581B1/ko
Priority to US12/718,008 priority patent/US20100223805A1/en
Publication of JP2010212293A publication Critical patent/JP2010212293A/ja
Publication of JP2010212293A5 publication Critical patent/JP2010212293A5/ja
Application granted granted Critical
Publication of JP4862903B2 publication Critical patent/JP4862903B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67769—Storage means

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Filtering Of Dispersed Particles In Gases (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2009053925A 2009-03-06 2009-03-06 基板処理装置、濾材の再生方法及び記憶媒体 Expired - Fee Related JP4862903B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009053925A JP4862903B2 (ja) 2009-03-06 2009-03-06 基板処理装置、濾材の再生方法及び記憶媒体
KR1020100015653A KR101315581B1 (ko) 2009-03-06 2010-02-22 기판 처리 장치, 여과재의 재생 방법 및 기억 매체
US12/718,008 US20100223805A1 (en) 2009-03-06 2010-03-05 Substrate processing device, recycling method of filtration material and recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009053925A JP4862903B2 (ja) 2009-03-06 2009-03-06 基板処理装置、濾材の再生方法及び記憶媒体

Publications (3)

Publication Number Publication Date
JP2010212293A JP2010212293A (ja) 2010-09-24
JP2010212293A5 JP2010212293A5 (enExample) 2011-04-21
JP4862903B2 true JP4862903B2 (ja) 2012-01-25

Family

ID=42676976

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009053925A Expired - Fee Related JP4862903B2 (ja) 2009-03-06 2009-03-06 基板処理装置、濾材の再生方法及び記憶媒体

Country Status (3)

Country Link
US (1) US20100223805A1 (enExample)
JP (1) JP4862903B2 (enExample)
KR (1) KR101315581B1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4527670B2 (ja) * 2006-01-25 2010-08-18 東京エレクトロン株式会社 加熱処理装置、加熱処理方法、制御プログラムおよびコンピュータ読取可能な記憶媒体
MX350504B (es) * 2011-03-29 2017-09-07 Kellog Co Sistema de recuperación de calor.
US10046371B2 (en) * 2013-03-29 2018-08-14 Semes Co., Ltd. Recycling unit, substrate treating apparatus and recycling method using the recycling unit
KR101661178B1 (ko) * 2014-11-18 2016-10-04 주식회사 테라세미콘 기판 프로세싱 장치
JP2017157800A (ja) * 2016-03-04 2017-09-07 東京エレクトロン株式会社 液処理方法、基板処理装置、及び記憶媒体
US10957529B2 (en) * 2016-11-28 2021-03-23 Taiwan Semiconductor Manufacturing Co., Ltd. Method for drying wafer with gaseous fluid
JP6762214B2 (ja) * 2016-12-02 2020-09-30 東京エレクトロン株式会社 基板液処理装置、および基板液処理方法
US10825698B2 (en) * 2017-06-15 2020-11-03 Samsung Electronics Co., Ltd. Substrate drying apparatus, facility of manufacturing semiconductor device, and method of drying substrate
KR102636979B1 (ko) * 2019-04-26 2024-02-14 삼성전자주식회사 멀티 챔버 장치
JP7314634B2 (ja) * 2019-06-11 2023-07-26 東京エレクトロン株式会社 塗布装置及び塗布方法
JP7323674B1 (ja) 2022-04-27 2023-08-08 セメス株式会社 薬液ヒーティング装置およびそれを備える基板処理システム
CN115031509B (zh) * 2022-05-18 2023-06-30 扬州思普尔科技有限公司 一种升降式半导体晶圆干燥装置
US20250357099A1 (en) * 2024-05-16 2025-11-20 Tokyo Electron Limited Wafer cleaning method and system

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5313982A (en) * 1988-07-08 1994-05-24 Tadahiro Ohmi Gas supply piping device for a process apparatus
JPH06103686B2 (ja) * 1989-11-24 1994-12-14 シー エフ エム テクノロジーズ，インコーポレイテッド 表面乾燥処理方法および装置
JP3557599B2 (ja) * 1998-08-07 2004-08-25 東京エレクトロン株式会社 蒸気処理装置
JP4173349B2 (ja) * 2001-11-05 2008-10-29 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP4056888B2 (ja) 2003-01-07 2008-03-05 株式会社島津製作所 気化器
DE20321795U1 (de) * 2003-12-11 2010-03-04 Voith Patent Gmbh Vorrichtung zum Reinigen wenigsten einer Prozesskammer zum Beschichten wenigstens eines Substrats
US20060048808A1 (en) * 2004-09-09 2006-03-09 Ruckman Jack H Solar, catalytic, hydrogen generation apparatus and method
US20060117743A1 (en) * 2004-12-03 2006-06-08 Helmut Swars Regeneratable particle filter
JP4662352B2 (ja) * 2005-08-10 2011-03-30 東京エレクトロン株式会社 蒸気乾燥方法及びその装置並びにその記録媒体
US7637029B2 (en) * 2005-07-08 2009-12-29 Tokyo Electron Limited Vapor drying method, apparatus and recording medium for use in the method

Also Published As

Publication number Publication date
US20100223805A1 (en) 2010-09-09
JP2010212293A (ja) 2010-09-24
KR20100100614A (ko) 2010-09-15
KR101315581B1 (ko) 2013-10-10

Similar Documents

Publication Publication Date Title
JP4862903B2 (ja) 基板処理装置、濾材の再生方法及び記憶媒体
KR102783796B1 (ko) 기판 처리 장치의 파티클 제거 방법 및 기판 처리 장치
KR102701372B1 (ko) 반도체 시스템의 습도 제어
KR101506203B1 (ko) 기판 처리 장치, 기판 처리 방법 및 기억 매체
JP2021525954A (ja) 基板製造装置及びファクトリインターフェースチャンバの加熱を用いた方法
JP6622702B2 (ja) 再循環型基板コンテナパージングシステム及び方法
JPH1183316A (ja) 乾燥処理装置及び乾燥処理方法
KR20180063831A (ko) 기판 처리 장치의 세정 방법 및 기판 처리 장치의 세정 시스템
JP2015531546A (ja) ヒューム除去装置及び基板処理装置
TW201327705A (zh) 基板處理裝置、基板處理方法及記憶媒體
JP2005142558A (ja) 半導体基板の洗浄及び乾燥システム及びそれを利用した洗浄及び乾燥方法
JP7355615B2 (ja) 基板洗浄装置及び基板洗浄方法
JP5015847B2 (ja) 基板処理装置、基板処理方法、プログラムならびに記録媒体
CN107533998A (zh) 基板处理装置以及清洗腔室的方法
KR20210008549A (ko) 버퍼 유닛, 그리고 이를 가지는 기판 처리 장치 및 방법
US20240203757A1 (en) Control unit and semiconductor manufacturing equipment including the same
JPWO1998044542A1 (ja) 基板処理方法および基板処理装置
JP2003115519A (ja) 半導体装置の製造方法、半導体製造装置、ロードロック室、基板収納ケース、ストッカ
JP5362503B2 (ja) 洗浄・乾燥処理方法、洗浄・乾燥処理装置、および記録媒体
CN114695190B (zh) 用于处理基板的设备和方法
CN111293065A (zh) 基板处理装置以及基板处理方法
US12272543B2 (en) Apparatus for treating substrate and method for treating substrate
JP2011071213A (ja) 乾燥室、洗浄・乾燥処理装置、乾燥処理方法、および記録媒体
KR102300977B1 (ko) 기판 처리 장치, 기판 처리 방법 및 기억 매체
JP2006156665A (ja) 基板洗浄装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110303

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110303

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110707

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110719

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110914

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20111011

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20111024

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20141118

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4862903

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees