JP4862113B2 - Ｐｃｍセル中の“先溶融”領域を制御する方法及びそれから得たデバイス - Google Patents

Ｐｃｍセル中の“先溶融”領域を制御する方法及びそれから得たデバイス Download PDF

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JP4862113B2
JP4862113B2 JP2008511849A JP2008511849A JP4862113B2 JP 4862113 B2 JP4862113 B2 JP 4862113B2 JP 2008511849 A JP2008511849 A JP 2008511849A JP 2008511849 A JP2008511849 A JP 2008511849A JP 4862113 B2 JP4862113 B2 JP 4862113B2
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phase change
change material
region
layer
insulating
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Japanese (ja)
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JP2008541474A5 (https=
JP2008541474A (ja
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グー ルドヴィク
ウーターズ ダーク
リゾーニ ジュディス
ギル トーマス
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NXP BV
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NXP BV
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Control For Baths (AREA)
  • External Artificial Organs (AREA)
JP2008511849A 2005-05-19 2006-05-18 Ｐｃｍセル中の“先溶融”領域を制御する方法及びそれから得たデバイス Active JP4862113B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US68345905P 2005-05-19 2005-05-19
US60/683,459 2005-05-19
PCT/IB2006/051575 WO2006123305A1 (en) 2005-05-19 2006-05-18 Method for controlling the 'first-to-melt' region in a pcm cell and devices obtained thereof

Publications (3)

Publication Number Publication Date
JP2008541474A JP2008541474A (ja) 2008-11-20
JP2008541474A5 JP2008541474A5 (https=) 2010-09-30
JP4862113B2 true JP4862113B2 (ja) 2012-01-25

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ID=36942608

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JP2008511849A Active JP4862113B2 (ja) 2005-05-19 2006-05-18 Ｐｃｍセル中の“先溶融”領域を制御する方法及びそれから得たデバイス

Country Status (7)

Country Link
US (1) US8008644B2 (https=)
EP (1) EP1886317B8 (https=)
JP (1) JP4862113B2 (https=)
CN (1) CN101213612B (https=)
AT (1) ATE420440T1 (https=)
DE (1) DE602006004729D1 (https=)
WO (1) WO2006123305A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101689603B (zh) * 2007-06-20 2015-08-12 台湾积体电路制造股份有限公司 电子元件及其制造方法
WO2009122347A2 (en) 2008-04-01 2009-10-08 Nxp B.V. Multiple bit phase change memory cell
WO2009122349A2 (en) 2008-04-01 2009-10-08 Nxp B.V. Vertical phase change memory cell
US8735862B2 (en) 2011-04-11 2014-05-27 Micron Technology, Inc. Memory cells, methods of forming memory cells and methods of forming memory arrays
US8932900B2 (en) 2011-08-24 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Phase change memory and method of fabricating same
CN103346258B (zh) * 2013-07-19 2015-08-26 中国科学院上海微系统与信息技术研究所 相变存储单元及其制备方法
US10103325B2 (en) * 2016-12-15 2018-10-16 Winbond Electronics Corp. Resistance change memory device and fabrication method thereof
US20210288250A1 (en) * 2020-03-13 2021-09-16 International Business Machines Corporation Phase Change Memory Having Gradual Reset

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004274055A (ja) * 2003-03-04 2004-09-30 Samsung Electronics Co Ltd 記憶素子のための貯蔵セル、ならびに相変化記憶素子及びその形成方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6809401B2 (en) * 2000-10-27 2004-10-26 Matsushita Electric Industrial Co., Ltd. Memory, writing apparatus, reading apparatus, writing method, and reading method
US6566700B2 (en) * 2001-10-11 2003-05-20 Ovonyx, Inc. Carbon-containing interfacial layer for phase-change memory
DE60137788D1 (de) * 2001-12-27 2009-04-09 St Microelectronics Srl Architektur einer nichtflüchtigen Phasenwechsel -Speichermatrix
US7151273B2 (en) * 2002-02-20 2006-12-19 Micron Technology, Inc. Silver-selenide/chalcogenide glass stack for resistance variable memory
KR100532462B1 (ko) * 2003-08-22 2005-12-01 삼성전자주식회사 상 변화 메모리 장치의 기입 전류 량을 제어하는프로그래밍 방법 및 프로그래밍 방법을 구현하는 기입드라이버 회로
KR100569550B1 (ko) * 2003-12-13 2006-04-10 주식회사 하이닉스반도체 상 변화 저항 셀 및 이를 이용한 불휘발성 메모리 장치
US7897952B2 (en) * 2005-05-19 2011-03-01 Nxp B.V. Phase-change memory cell with a patterned layer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004274055A (ja) * 2003-03-04 2004-09-30 Samsung Electronics Co Ltd 記憶素子のための貯蔵セル、ならびに相変化記憶素子及びその形成方法

Also Published As

Publication number Publication date
EP1886317A1 (en) 2008-02-13
EP1886317B1 (en) 2009-01-07
EP1886317B8 (en) 2009-04-08
ATE420440T1 (de) 2009-01-15
DE602006004729D1 (de) 2009-02-26
JP2008541474A (ja) 2008-11-20
CN101213612A (zh) 2008-07-02
US8008644B2 (en) 2011-08-30
WO2006123305A1 (en) 2006-11-23
US20080265237A1 (en) 2008-10-30
CN101213612B (zh) 2010-09-29

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