DE602006004729D1 - Verfahren zum regeln des zuerst schmelzenden bereihtungen - Google Patents
Verfahren zum regeln des zuerst schmelzenden bereihtungenInfo
- Publication number
- DE602006004729D1 DE602006004729D1 DE602006004729T DE602006004729T DE602006004729D1 DE 602006004729 D1 DE602006004729 D1 DE 602006004729D1 DE 602006004729 T DE602006004729 T DE 602006004729T DE 602006004729 T DE602006004729 T DE 602006004729T DE 602006004729 D1 DE602006004729 D1 DE 602006004729D1
- Authority
- DE
- Germany
- Prior art keywords
- phase
- change material
- services
- regulating
- melting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Patterning of the switching material
- H10N70/063—Patterning of the switching material by etching of pre-deposited switching material layers, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Other compounds of groups 13-15, e.g. elemental or compound semiconductors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US68345905P | 2005-05-19 | 2005-05-19 | |
PCT/IB2006/051575 WO2006123305A1 (en) | 2005-05-19 | 2006-05-18 | Method for controlling the 'first-to-melt' region in a pcm cell and devices obtained thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602006004729D1 true DE602006004729D1 (de) | 2009-02-26 |
Family
ID=36942608
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602006004729T Active DE602006004729D1 (de) | 2005-05-19 | 2006-05-18 | Verfahren zum regeln des zuerst schmelzenden bereihtungen |
Country Status (7)
Country | Link |
---|---|
US (1) | US8008644B2 (de) |
EP (1) | EP1886317B8 (de) |
JP (1) | JP4862113B2 (de) |
CN (1) | CN101213612B (de) |
AT (1) | ATE420440T1 (de) |
DE (1) | DE602006004729D1 (de) |
WO (1) | WO2006123305A1 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101166834B1 (ko) | 2007-06-20 | 2012-07-19 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 전자 부품 및 그 제조 방법 |
JP5846906B2 (ja) | 2008-04-01 | 2016-01-20 | エヌエックスピー ビー ヴィNxp B.V. | バーチカル型相変化メモリセル |
JP5451740B2 (ja) | 2008-04-01 | 2014-03-26 | エヌエックスピー ビー ヴィ | 多重ビット相変化メモリセル |
US8735862B2 (en) * | 2011-04-11 | 2014-05-27 | Micron Technology, Inc. | Memory cells, methods of forming memory cells and methods of forming memory arrays |
US8932900B2 (en) | 2011-08-24 | 2015-01-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Phase change memory and method of fabricating same |
CN103346258B (zh) * | 2013-07-19 | 2015-08-26 | 中国科学院上海微系统与信息技术研究所 | 相变存储单元及其制备方法 |
US10103325B2 (en) * | 2016-12-15 | 2018-10-16 | Winbond Electronics Corp. | Resistance change memory device and fabrication method thereof |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6809401B2 (en) * | 2000-10-27 | 2004-10-26 | Matsushita Electric Industrial Co., Ltd. | Memory, writing apparatus, reading apparatus, writing method, and reading method |
US6566700B2 (en) * | 2001-10-11 | 2003-05-20 | Ovonyx, Inc. | Carbon-containing interfacial layer for phase-change memory |
DE60137788D1 (de) * | 2001-12-27 | 2009-04-09 | St Microelectronics Srl | Architektur einer nichtflüchtigen Phasenwechsel -Speichermatrix |
US7151273B2 (en) * | 2002-02-20 | 2006-12-19 | Micron Technology, Inc. | Silver-selenide/chalcogenide glass stack for resistance variable memory |
KR100543445B1 (ko) * | 2003-03-04 | 2006-01-23 | 삼성전자주식회사 | 상변화 기억 소자 및 그 형성방법 |
KR100532462B1 (ko) * | 2003-08-22 | 2005-12-01 | 삼성전자주식회사 | 상 변화 메모리 장치의 기입 전류 량을 제어하는프로그래밍 방법 및 프로그래밍 방법을 구현하는 기입드라이버 회로 |
KR100569550B1 (ko) * | 2003-12-13 | 2006-04-10 | 주식회사 하이닉스반도체 | 상 변화 저항 셀 및 이를 이용한 불휘발성 메모리 장치 |
US7897952B2 (en) * | 2005-05-19 | 2011-03-01 | Nxp B.V. | Phase-change memory cell with a patterned layer |
-
2006
- 2006-05-18 WO PCT/IB2006/051575 patent/WO2006123305A1/en active Application Filing
- 2006-05-18 EP EP06744974A patent/EP1886317B8/de active Active
- 2006-05-18 US US11/914,645 patent/US8008644B2/en active Active
- 2006-05-18 AT AT06744974T patent/ATE420440T1/de not_active IP Right Cessation
- 2006-05-18 JP JP2008511849A patent/JP4862113B2/ja active Active
- 2006-05-18 CN CN2006800171422A patent/CN101213612B/zh active Active
- 2006-05-18 DE DE602006004729T patent/DE602006004729D1/de active Active
Also Published As
Publication number | Publication date |
---|---|
EP1886317A1 (de) | 2008-02-13 |
CN101213612B (zh) | 2010-09-29 |
WO2006123305A1 (en) | 2006-11-23 |
CN101213612A (zh) | 2008-07-02 |
ATE420440T1 (de) | 2009-01-15 |
EP1886317B8 (de) | 2009-04-08 |
US8008644B2 (en) | 2011-08-30 |
JP2008541474A (ja) | 2008-11-20 |
EP1886317B1 (de) | 2009-01-07 |
JP4862113B2 (ja) | 2012-01-25 |
US20080265237A1 (en) | 2008-10-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8327 | Change in the person/name/address of the patent owner |
Owner name: NXP B.V., EINDHOVEN, NL Owner name: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW, BE |
|
8364 | No opposition during term of opposition |