ATE420440T1 - Verfahren zum regeln des zuerst schmelzenden bereiches einer pcm-zelle und damit hergestellte vorrichtungen - Google Patents
Verfahren zum regeln des zuerst schmelzenden bereiches einer pcm-zelle und damit hergestellte vorrichtungenInfo
- Publication number
- ATE420440T1 ATE420440T1 AT06744974T AT06744974T ATE420440T1 AT E420440 T1 ATE420440 T1 AT E420440T1 AT 06744974 T AT06744974 T AT 06744974T AT 06744974 T AT06744974 T AT 06744974T AT E420440 T1 ATE420440 T1 AT E420440T1
- Authority
- AT
- Austria
- Prior art keywords
- phase
- controlling
- produced therefrom
- devices produced
- pcm cell
- Prior art date
Links
- 238000002844 melting Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000012782 phase change material Substances 0.000 abstract 4
- 238000002425 crystallisation Methods 0.000 abstract 2
- 230000008025 crystallization Effects 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Control For Baths (AREA)
- External Artificial Organs (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US68345905P | 2005-05-19 | 2005-05-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE420440T1 true ATE420440T1 (de) | 2009-01-15 |
Family
ID=36942608
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT06744974T ATE420440T1 (de) | 2005-05-19 | 2006-05-18 | Verfahren zum regeln des zuerst schmelzenden bereiches einer pcm-zelle und damit hergestellte vorrichtungen |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8008644B2 (https=) |
| EP (1) | EP1886317B8 (https=) |
| JP (1) | JP4862113B2 (https=) |
| CN (1) | CN101213612B (https=) |
| AT (1) | ATE420440T1 (https=) |
| DE (1) | DE602006004729D1 (https=) |
| WO (1) | WO2006123305A1 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101689603B (zh) * | 2007-06-20 | 2015-08-12 | 台湾积体电路制造股份有限公司 | 电子元件及其制造方法 |
| WO2009122347A2 (en) | 2008-04-01 | 2009-10-08 | Nxp B.V. | Multiple bit phase change memory cell |
| WO2009122349A2 (en) | 2008-04-01 | 2009-10-08 | Nxp B.V. | Vertical phase change memory cell |
| US8735862B2 (en) | 2011-04-11 | 2014-05-27 | Micron Technology, Inc. | Memory cells, methods of forming memory cells and methods of forming memory arrays |
| US8932900B2 (en) | 2011-08-24 | 2015-01-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Phase change memory and method of fabricating same |
| CN103346258B (zh) * | 2013-07-19 | 2015-08-26 | 中国科学院上海微系统与信息技术研究所 | 相变存储单元及其制备方法 |
| US10103325B2 (en) * | 2016-12-15 | 2018-10-16 | Winbond Electronics Corp. | Resistance change memory device and fabrication method thereof |
| US20210288250A1 (en) * | 2020-03-13 | 2021-09-16 | International Business Machines Corporation | Phase Change Memory Having Gradual Reset |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6809401B2 (en) * | 2000-10-27 | 2004-10-26 | Matsushita Electric Industrial Co., Ltd. | Memory, writing apparatus, reading apparatus, writing method, and reading method |
| US6566700B2 (en) * | 2001-10-11 | 2003-05-20 | Ovonyx, Inc. | Carbon-containing interfacial layer for phase-change memory |
| DE60137788D1 (de) * | 2001-12-27 | 2009-04-09 | St Microelectronics Srl | Architektur einer nichtflüchtigen Phasenwechsel -Speichermatrix |
| US7151273B2 (en) * | 2002-02-20 | 2006-12-19 | Micron Technology, Inc. | Silver-selenide/chalcogenide glass stack for resistance variable memory |
| KR100543445B1 (ko) * | 2003-03-04 | 2006-01-23 | 삼성전자주식회사 | 상변화 기억 소자 및 그 형성방법 |
| KR100532462B1 (ko) * | 2003-08-22 | 2005-12-01 | 삼성전자주식회사 | 상 변화 메모리 장치의 기입 전류 량을 제어하는프로그래밍 방법 및 프로그래밍 방법을 구현하는 기입드라이버 회로 |
| KR100569550B1 (ko) * | 2003-12-13 | 2006-04-10 | 주식회사 하이닉스반도체 | 상 변화 저항 셀 및 이를 이용한 불휘발성 메모리 장치 |
| US7897952B2 (en) * | 2005-05-19 | 2011-03-01 | Nxp B.V. | Phase-change memory cell with a patterned layer |
-
2006
- 2006-05-18 AT AT06744974T patent/ATE420440T1/de not_active IP Right Cessation
- 2006-05-18 EP EP06744974A patent/EP1886317B8/en active Active
- 2006-05-18 DE DE602006004729T patent/DE602006004729D1/de active Active
- 2006-05-18 WO PCT/IB2006/051575 patent/WO2006123305A1/en not_active Ceased
- 2006-05-18 US US11/914,645 patent/US8008644B2/en active Active
- 2006-05-18 CN CN2006800171422A patent/CN101213612B/zh active Active
- 2006-05-18 JP JP2008511849A patent/JP4862113B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| EP1886317A1 (en) | 2008-02-13 |
| JP4862113B2 (ja) | 2012-01-25 |
| EP1886317B1 (en) | 2009-01-07 |
| EP1886317B8 (en) | 2009-04-08 |
| DE602006004729D1 (de) | 2009-02-26 |
| JP2008541474A (ja) | 2008-11-20 |
| CN101213612A (zh) | 2008-07-02 |
| US8008644B2 (en) | 2011-08-30 |
| WO2006123305A1 (en) | 2006-11-23 |
| US20080265237A1 (en) | 2008-10-30 |
| CN101213612B (zh) | 2010-09-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |