CN101213612B - 相变存储单元和形成相变存储单元的方法 - Google Patents

相变存储单元和形成相变存储单元的方法 Download PDF

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CN101213612B
CN101213612B CN2006800171422A CN200680017142A CN101213612B CN 101213612 B CN101213612 B CN 101213612B CN 2006800171422 A CN2006800171422 A CN 2006800171422A CN 200680017142 A CN200680017142 A CN 200680017142A CN 101213612 B CN101213612 B CN 101213612B
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phase change
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change material
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CN101213612A (zh
Inventor
卢多维克·古克斯
德克·武泰斯
朱迪思·里索尼
托马斯·吉勒
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Interuniversitair Microelektronica Centrum vzw IMEC
Koninklijke Philips Electronics NV
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/063—Shaping switching materials by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Control For Baths (AREA)
  • External Artificial Organs (AREA)
CN2006800171422A 2005-05-19 2006-05-18 相变存储单元和形成相变存储单元的方法 Active CN101213612B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US68345905P 2005-05-19 2005-05-19
US60/683,459 2005-05-19
PCT/IB2006/051575 WO2006123305A1 (en) 2005-05-19 2006-05-18 Method for controlling the 'first-to-melt' region in a pcm cell and devices obtained thereof

Publications (2)

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CN101213612A CN101213612A (zh) 2008-07-02
CN101213612B true CN101213612B (zh) 2010-09-29

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US (1) US8008644B2 (https=)
EP (1) EP1886317B8 (https=)
JP (1) JP4862113B2 (https=)
CN (1) CN101213612B (https=)
AT (1) ATE420440T1 (https=)
DE (1) DE602006004729D1 (https=)
WO (1) WO2006123305A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101689603B (zh) * 2007-06-20 2015-08-12 台湾积体电路制造股份有限公司 电子元件及其制造方法
WO2009122347A2 (en) 2008-04-01 2009-10-08 Nxp B.V. Multiple bit phase change memory cell
WO2009122349A2 (en) 2008-04-01 2009-10-08 Nxp B.V. Vertical phase change memory cell
US8735862B2 (en) 2011-04-11 2014-05-27 Micron Technology, Inc. Memory cells, methods of forming memory cells and methods of forming memory arrays
US8932900B2 (en) 2011-08-24 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Phase change memory and method of fabricating same
CN103346258B (zh) * 2013-07-19 2015-08-26 中国科学院上海微系统与信息技术研究所 相变存储单元及其制备方法
US10103325B2 (en) * 2016-12-15 2018-10-16 Winbond Electronics Corp. Resistance change memory device and fabrication method thereof
US20210288250A1 (en) * 2020-03-13 2021-09-16 International Business Machines Corporation Phase Change Memory Having Gradual Reset

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1202285A2 (en) * 2000-10-27 2002-05-02 Matsushita Electric Industrial Co., Ltd. Memory, writing apparatus, reading apparatus, writing method, and reading method
EP1326254A1 (en) * 2001-12-27 2003-07-09 STMicroelectronics S.r.l. Architecture of a phase-change nonvolatile memory array
US20050041464A1 (en) * 2003-08-22 2005-02-24 Baek-Hyung Cho Programming method of controlling the amount of write current applied to phase change memory device and write driver circuit therefor
CN1610950A (zh) * 2001-10-11 2005-04-27 英特尔公司 用于相变存储器的含碳分界表面层

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7151273B2 (en) * 2002-02-20 2006-12-19 Micron Technology, Inc. Silver-selenide/chalcogenide glass stack for resistance variable memory
KR100543445B1 (ko) * 2003-03-04 2006-01-23 삼성전자주식회사 상변화 기억 소자 및 그 형성방법
KR100569550B1 (ko) * 2003-12-13 2006-04-10 주식회사 하이닉스반도체 상 변화 저항 셀 및 이를 이용한 불휘발성 메모리 장치
US7897952B2 (en) * 2005-05-19 2011-03-01 Nxp B.V. Phase-change memory cell with a patterned layer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1202285A2 (en) * 2000-10-27 2002-05-02 Matsushita Electric Industrial Co., Ltd. Memory, writing apparatus, reading apparatus, writing method, and reading method
CN1610950A (zh) * 2001-10-11 2005-04-27 英特尔公司 用于相变存储器的含碳分界表面层
EP1326254A1 (en) * 2001-12-27 2003-07-09 STMicroelectronics S.r.l. Architecture of a phase-change nonvolatile memory array
US20050041464A1 (en) * 2003-08-22 2005-02-24 Baek-Hyung Cho Programming method of controlling the amount of write current applied to phase change memory device and write driver circuit therefor

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
MARTIJN H. R. LANKHORST等.Low-cost and nanoscale non-volatile memory conceptfor future silicon chips.Nature Materials.2005,347-352. *
P. Haring Bolívar等.Lateral design for phase change random access memorycellswith low-current operation.European\Phase change and Ovonics Symposium (E\PCOS 2004).2004,1-4. *

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Publication number Publication date
EP1886317A1 (en) 2008-02-13
JP4862113B2 (ja) 2012-01-25
EP1886317B1 (en) 2009-01-07
EP1886317B8 (en) 2009-04-08
ATE420440T1 (de) 2009-01-15
DE602006004729D1 (de) 2009-02-26
JP2008541474A (ja) 2008-11-20
CN101213612A (zh) 2008-07-02
US8008644B2 (en) 2011-08-30
WO2006123305A1 (en) 2006-11-23
US20080265237A1 (en) 2008-10-30

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