JP4854921B2 - 異物種を含有するドナーウエハを転写することによる基板の製造方法および関連するドナーウエハ - Google Patents
異物種を含有するドナーウエハを転写することによる基板の製造方法および関連するドナーウエハ Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 54
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 72
- 238000000034 method Methods 0.000 claims abstract description 65
- 229910052742 iron Inorganic materials 0.000 claims abstract description 33
- 238000009792 diffusion process Methods 0.000 claims abstract description 16
- 238000002513 implantation Methods 0.000 claims abstract description 10
- 238000003776 cleavage reaction Methods 0.000 claims abstract description 7
- 230000007017 scission Effects 0.000 claims abstract description 7
- 230000003287 optical effect Effects 0.000 claims abstract description 6
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 48
- 239000000463 material Substances 0.000 claims description 42
- 238000012546 transfer Methods 0.000 claims description 12
- 238000000137 annealing Methods 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052703 rhodium Inorganic materials 0.000 claims description 6
- 239000010948 rhodium Substances 0.000 claims description 6
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 6
- 229910052753 mercury Inorganic materials 0.000 claims description 4
- 229910052756 noble gas Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052793 cadmium Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- -1 hydrogen ions Chemical class 0.000 claims description 3
- 239000012212 insulator Substances 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 2
- 238000009877 rendering Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 25
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 238000000407 epitaxy Methods 0.000 description 5
- 230000004927 fusion Effects 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000003351 stiffener Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 230000005012 migration Effects 0.000 description 3
- 238000013508 migration Methods 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 206010022971 Iron Deficiencies Diseases 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000003795 desorption Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000003574 free electron Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000005660 hydrophilic surface Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000001802 infusion Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2258—Diffusion into or out of AIIIBV compounds
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Element Separation (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
・サイズ:一部の基板は標準工業サイズで入手しえないため、より大きな直径の支持体またはスティフナー上へ薄層を転写する方法を行うことが可能である。特に、4インチ径InP膜は、6インチ標準マイクロエレクトロニクス組立て設備と適合するように、6インチ径支持体上へ転写することができる;
・脆性:あるバルク基板(例えばInP)の脆性のために、組立ておよび取扱い中に基板および部材を壊し、そのため生産コストをかなり増すことがある。スティフナーが構造体(例えば、SiまたはGaAs支持体上の薄InP層)へ強度を付与しうるならば、層転写法は有利に用いることができる;
・コスト:層転写法を用いて、非常に薄い層(数十ナノメーター厚)を安価な強化基板上へ転写することができれば、ある基板の高コストも正当化されるであろう;ドナーウエハをリサイクルした後で、その操作が繰り返される(否定的);
・コンプライアント効果:この用語は、特に寸法に関して、薄層のある適合性を表わしている。この点において、エピタキシャル成長には、基板アセンブリーおよびエピタキシャル層の格子パラメーターと熱膨張率とで良い調和を要することが知られている。例えば、バルクGaAs基板では、最大格子不調和率が約1%を超えてはならず、そうでなければ積重ね欠陥がエピタキシャル層で生じてしまう。もちろん、格子パラメーター間で高い不調和を許容しながら、変形によりエピタキシャル成長物質の特徴と自ら調和しうるほど十分に薄いエピタキシャルシード層を有する多層構造をもたらす技術が、最近開発されている。
・異物種を実質的に含まないドナーウエハのゾーン中へ原子種を注入して、結合面の下に脆化ゾーンを形成させ、ここで、脆化ゾーンおよび結合面が、転写される薄層の境界を定めており、
・ドナーウエハをその結合面のレベルで支持体へ結合させ、
・脆化ゾーンの領域で開裂を生じさせて、支持体および薄層を含んでなる基板を得るために、応力を加える
ステップを順次行なうことからなり、注入前または破断後における、薄層の厚さ中へ、薄層の性質、特にその電気的または光学的性質を変えるために適した異物種を拡散させるステップを更に含んでなることで特徴付けられる。
・異物種を拡散させるステップが破断後に行われる;
・異物種を拡散させるステップが注入前に行われる;
・異物種を拡散させるステップが、注入深さよりも浅い深さのところまで行われる;
・その方法は、開裂後に、異物種が枯渇した移写層の部分を取り除くために適した薄化ステップを含んでいる;
・その方法は、結合前に、ドナーウエハ上および/または支持体上に結合層を作製するステップを更に含んでいる;
・結合層は最終基板で埋込み絶縁体を形成する;
・ドナーウエハの物質はIII‐V半導体材料である;
・異物種が、拡散により材料を半絶縁性にさせる種類を含む;
・材料は燐化インジウムである;
・異物種は、鉄およびロジウムからなる群より選択される;
・異物種には、水銀またはカドミウムのようなシャロー(shallow)アクセプターとチタンまたはクロムのようなシャロードナーとの組合せを含む;
・注入種は、水素イオンおよび希ガスイオンから選択される少くとも1つの種を含んでなる;
・支持体物質は、薄層の物質よりも機械的に強くなるように選択される;
・その方法には、基板の薄層で行われるエピタキシャル成長ステップを含んでいる;
・エピタキシャル成長物質の格子は、薄層の物質と調和しない。
・ウエハの物質はIII‐V半導体材料であり、上記異物種はウエハの材料を半絶縁性にしうる;
・III‐V半導体材料は燐化インジウムである;
・異物種は、鉄およびロジウムからなる群より選択される。
・Feが拡散したInPの薄膜;
・任意の非晶質結合層(SiO2、Si3N4など);
・支持体、例えば単結晶、多結晶Siなど
を有する構造体を生産しうる。
Claims (15)
- ドナーウエハから転写された薄結晶層を支持体上に含んでなり、該薄層がその電気的または光学的性質を変えるための1以上の異物種を含有している、基板の生産方法であって、
異物種(24)を含まないドナーウエハ(20)のゾーン中へ原子種を注入して、結合面の下に脆化ゾーン(22)を形成させ、ここで、脆化ゾーンおよび結合面が、転写される薄層(23)の境界を定めているステップと、
ドナーウエハ(20)をその結合面で支持体(10)へ結合させるステップと、
脆化ゾーン(22)の領域で開裂を生じさせて、支持体(10)および薄層(23)を含んでなる基板を得るために、応力を加えるステップと
を順次行うことからなり、
前記原子種の注入が異物種(24)を含まないドナーウエハ(20)のゾーン中に行われ、
前記方法が、前記開裂の生成後に、前記薄層をアニーリング処理下、薄層を半絶縁性にするのに適した異物種の源に曝すことにより、異物種(24)を薄層(23)の厚さ方向へ拡散させるステップを更に含んでなることで特徴付けられる方法。 - ドナーウエハから転写された薄結晶層を支持体上に含んでなり、該薄層がその電気的または光学的性質を変えるための1以上の異物種を含有している、基板の生産方法であって、
前記薄層をアニーリング処理下、薄層を半絶縁性にするのに適した異物種の源に曝すことにより、異物種(24)を薄層(23)の厚さ方向へ拡散させるステップと、
異物種(24)を含まないドナーウエハ(20)のゾーン中へ原子種を注入して、結合面の下に脆化ゾーン(22)を形成させ、ここで、脆化ゾーンおよび結合面が、転写される薄層(23)の境界を定めているステップと、
ドナーウエハ(20)をその結合面で支持体(10)へ結合させるステップと、
脆化ゾーン(22)の領域で開裂を生じさせて、支持体(10)および薄層(23)を含んでなる基板を得るために、応力を加えるステップと
を順次行うことからなることで特徴付けられる方法。 - 前記異物種を拡散させるステップが、注入深さよりも浅い深さのところまで行われる、請求項2に記載の方法。
- 前記開裂後に、前記脆化ゾーンに由来する異物種が枯渇した移写層の部分を除去する薄化ステップを含んでなる、請求項3に記載の方法。
- 前記結合前に、ドナーウエハ上および/または支持体上に結合層を作製するステップを更に含んでいる、請求項1〜4のいずれか一項に記載の方法。
- 前記結合層が前記基板で埋込み絶縁体を形成している、請求項5に記載の方法。
- 前記ドナーウエハの物質がIII‐V半導体材料である、請求項1〜6のいずれか一項に記載の方法。
- 前記異物種に、拡散により材料を半絶縁性にしうる種類を含む、請求項7に記載の方法。
- 前記材料が燐化インジウムである、請求項8に記載の方法。
- 前記異物種が、鉄およびロジウムからなる群より選択される、請求項9に記載の方法。
- 前記異物種が、水銀またはカドミウムのようなシャローアクセプターと、チタンまたはクロムのようなシャロードナーとの組合せを含む、請求項9に記載の方法。
- 前記注入された種が、水素イオンおよび希ガスイオンから選択される、少なくとも1つの種を含んでなる、請求項1〜11のいずれか一項に記載の方法。
- 前記支持体物質が、前記薄層の前記物質よりも機械的に強くなるように選択される、請求項1〜12のいずれか一項に記載の方法。
- 前記基板の前記薄層で行われる、後のエピタキシャル成長ステップを含んでいる、請求項1〜13のいずれか一項に記載の方法。
- 前記エピタキシャル成長物質の格子が、前記薄層の物質と調和しない、請求項14に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0212405A FR2845523B1 (fr) | 2002-10-07 | 2002-10-07 | Procede pour realiser un substrat par transfert d'une plaquette donneuse comportant des especes etrangeres, et plaquette donneuse associee |
FR0212405 | 2002-10-07 |
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JP2004179630A JP2004179630A (ja) | 2004-06-24 |
JP2004179630A5 JP2004179630A5 (ja) | 2010-11-25 |
JP4854921B2 true JP4854921B2 (ja) | 2012-01-18 |
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US (3) | US7008859B2 (ja) |
EP (1) | EP1408545B1 (ja) |
JP (1) | JP4854921B2 (ja) |
AT (1) | ATE477589T1 (ja) |
DE (1) | DE60333712D1 (ja) |
FR (1) | FR2845523B1 (ja) |
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US6912330B2 (en) * | 2001-05-17 | 2005-06-28 | Sioptical Inc. | Integrated optical/electronic circuits and associated methods of simultaneous generation thereof |
FR2845523B1 (fr) * | 2002-10-07 | 2005-10-28 | Procede pour realiser un substrat par transfert d'une plaquette donneuse comportant des especes etrangeres, et plaquette donneuse associee | |
FR2856192B1 (fr) * | 2003-06-11 | 2005-07-29 | Soitec Silicon On Insulator | Procede de realisation de structure heterogene et structure obtenue par un tel procede |
US7538010B2 (en) * | 2003-07-24 | 2009-05-26 | S.O.I.Tec Silicon On Insulator Technologies | Method of fabricating an epitaxially grown layer |
FR2857983B1 (fr) * | 2003-07-24 | 2005-09-02 | Soitec Silicon On Insulator | Procede de fabrication d'une couche epitaxiee |
EP1571705A3 (fr) * | 2004-03-01 | 2006-01-04 | S.O.I.Tec Silicon on Insulator Technologies | Réalisation d'une entité en matériau semiconducteur sur substrat |
WO2006082467A1 (en) * | 2005-02-01 | 2006-08-10 | S.O.I.Tec Silicon On Insulator Technologies | Substrate for crystal growing a nitride semiconductor |
US7244630B2 (en) * | 2005-04-05 | 2007-07-17 | Philips Lumileds Lighting Company, Llc | A1InGaP LED having reduced temperature dependence |
FR2890489B1 (fr) * | 2005-09-08 | 2008-03-07 | Soitec Silicon On Insulator | Procede de fabrication d'une heterostructure de type semi-conducteur sur isolant |
CN1992173B (zh) * | 2005-11-30 | 2010-04-21 | 硅起源股份有限公司 | 用于注入键合衬底以便导电的方法和结构 |
WO2008096194A1 (en) * | 2007-02-08 | 2008-08-14 | S.O.I.Tec Silicon On Insulator Technologies | Method of fabrication of highly heat dissipative substrates |
US20090092159A1 (en) * | 2007-05-28 | 2009-04-09 | Sumitomo Electric Industries, Ltd. | Semiconductor light-emitting device with tunable emission wavelength |
US20090174018A1 (en) * | 2008-01-09 | 2009-07-09 | Micron Technology, Inc. | Construction methods for backside illuminated image sensors |
FR2926674B1 (fr) * | 2008-01-21 | 2010-03-26 | Soitec Silicon On Insulator | Procede de fabrication d'une structure composite avec couche d'oxyde de collage stable |
EP2255395B1 (en) * | 2008-02-26 | 2012-04-25 | S.O.I.Tec Silicon on Insulator Technologies | Method for fabricating a semiconductor substrate |
US20100044827A1 (en) * | 2008-08-22 | 2010-02-25 | Kinik Company | Method for making a substrate structure comprising a film and substrate structure made by same method |
EP2202795A1 (en) * | 2008-12-24 | 2010-06-30 | S.O.I. TEC Silicon | Method for fabricating a semiconductor substrate and semiconductor substrate |
FR2953328B1 (fr) * | 2009-12-01 | 2012-03-30 | S O I Tec Silicon On Insulator Tech | Heterostructure pour composants electroniques de puissance, composants optoelectroniques ou photovoltaiques |
US8748288B2 (en) * | 2010-02-05 | 2014-06-10 | International Business Machines Corporation | Bonded structure with enhanced adhesion strength |
EP2372755B1 (de) * | 2010-03-31 | 2013-03-20 | EV Group E. Thallner GmbH | Verfahren zum permanenten Verbinden zweier Metalloberflächen |
FR2961948B1 (fr) * | 2010-06-23 | 2012-08-03 | Soitec Silicon On Insulator | Procede de traitement d'une piece en materiau compose |
FR2977069B1 (fr) | 2011-06-23 | 2014-02-07 | Soitec Silicon On Insulator | Procede de fabrication d'une structure semi-conductrice mettant en oeuvre un collage temporaire |
RU2469433C1 (ru) * | 2011-07-13 | 2012-12-10 | Юрий Георгиевич Шретер | Способ лазерного отделения эпитаксиальной пленки или слоя эпитаксиальной пленки от ростовой подложки эпитаксиальной полупроводниковой структуры (варианты) |
DE112012003260T5 (de) | 2011-08-05 | 2014-05-15 | Sumitomo Electric Industries, Ltd. | Substrat, Halbleitervorrichtung und Verfahren zur Herstellung derselben |
FR2982071B1 (fr) * | 2011-10-27 | 2014-05-16 | Commissariat Energie Atomique | Procede de lissage d'une surface par traitement thermique |
FR2994766B1 (fr) * | 2012-08-23 | 2014-09-05 | Commissariat Energie Atomique | Procede de transfert d'un film d'inp |
FR3007892B1 (fr) * | 2013-06-27 | 2015-07-31 | Commissariat Energie Atomique | Procede de transfert d'une couche mince avec apport d'energie thermique a une zone fragilisee via une couche inductive |
CN105374664A (zh) * | 2015-10-23 | 2016-03-02 | 中国科学院上海微系统与信息技术研究所 | 一种InP薄膜复合衬底的制备方法 |
FR3045678B1 (fr) | 2015-12-22 | 2017-12-22 | Soitec Silicon On Insulator | Procede de fabrication d'une couche piezoelectrique monocristalline et dispositif microelectronique, photonique ou optique comprenant une telle couche |
TWI730053B (zh) * | 2016-02-16 | 2021-06-11 | 瑞士商G射線瑞士公司 | 用於電荷傳輸通過接合界面的結構、系統及方法 |
CN113223928B (zh) * | 2021-04-16 | 2024-01-12 | 西安电子科技大学 | 一种基于转移键合的氧化镓外延生长方法 |
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FR2596777B1 (fr) * | 1986-04-08 | 1994-01-21 | Etat Francais Cnet | Procede de preparation de semi-isolants 3-5 mono-cristallins par dopage et application des semi-isolants ainsi obtenus |
US4738934A (en) * | 1986-05-16 | 1988-04-19 | American Telephone And Telegraph Company, At&T Bell Laboratories | Method of making indium phosphide devices |
IL100979A0 (en) | 1991-03-18 | 1992-11-15 | Hughes Aircraft Co | Method for establishing an electrical field at a surface of a semiconductor device |
JP2932787B2 (ja) * | 1991-10-03 | 1999-08-09 | 日立電線株式会社 | 化合物半導体ウェハの製造方法 |
US5227313A (en) * | 1992-07-24 | 1993-07-13 | Eastman Kodak Company | Process for making backside illuminated image sensors |
US5244817A (en) * | 1992-08-03 | 1993-09-14 | Eastman Kodak Company | Method of making backside illuminated image sensors |
US5270221A (en) * | 1992-11-05 | 1993-12-14 | Hughes Aircraft Company | Method of fabricating high quantum efficiency solid state sensors |
JPH08139297A (ja) * | 1994-09-14 | 1996-05-31 | Nippon Telegr & Teleph Corp <Ntt> | Soi基板の製造方法 |
US5882987A (en) * | 1997-08-26 | 1999-03-16 | International Business Machines Corporation | Smart-cut process for the production of thin semiconductor material films |
JPH11163363A (ja) * | 1997-11-22 | 1999-06-18 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
FR2809867B1 (fr) * | 2000-05-30 | 2003-10-24 | Commissariat Energie Atomique | Substrat fragilise et procede de fabrication d'un tel substrat |
FR2816445B1 (fr) * | 2000-11-06 | 2003-07-25 | Commissariat Energie Atomique | Procede de fabrication d'une structure empilee comprenant une couche mince adherant a un substrat cible |
FR2817395B1 (fr) * | 2000-11-27 | 2003-10-31 | Soitec Silicon On Insulator | Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede |
JP4304884B2 (ja) * | 2001-06-06 | 2009-07-29 | 日本電気株式会社 | 半導体装置及びその製造方法 |
FR2845523B1 (fr) * | 2002-10-07 | 2005-10-28 | Procede pour realiser un substrat par transfert d'une plaquette donneuse comportant des especes etrangeres, et plaquette donneuse associee | |
US7169226B2 (en) * | 2003-07-01 | 2007-01-30 | International Business Machines Corporation | Defect reduction by oxidation of silicon |
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- 2003-10-07 JP JP2003348741A patent/JP4854921B2/ja not_active Expired - Lifetime
- 2003-10-07 AT AT03292465T patent/ATE477589T1/de not_active IP Right Cessation
- 2003-10-07 DE DE60333712T patent/DE60333712D1/de not_active Expired - Lifetime
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Also Published As
Publication number | Publication date |
---|---|
US7008859B2 (en) | 2006-03-07 |
EP1408545A2 (en) | 2004-04-14 |
US7535115B2 (en) | 2009-05-19 |
US20080248631A1 (en) | 2008-10-09 |
ATE477589T1 (de) | 2010-08-15 |
US20040121558A1 (en) | 2004-06-24 |
US7645684B2 (en) | 2010-01-12 |
US20060060922A1 (en) | 2006-03-23 |
EP1408545B1 (en) | 2010-08-11 |
FR2845523A1 (fr) | 2004-04-09 |
EP1408545A3 (en) | 2004-08-04 |
DE60333712D1 (de) | 2010-09-23 |
JP2004179630A (ja) | 2004-06-24 |
FR2845523B1 (fr) | 2005-10-28 |
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