JP4854286B2 - 銅配線構造 - Google Patents
銅配線構造 Download PDFInfo
- Publication number
- JP4854286B2 JP4854286B2 JP2005351832A JP2005351832A JP4854286B2 JP 4854286 B2 JP4854286 B2 JP 4854286B2 JP 2005351832 A JP2005351832 A JP 2005351832A JP 2005351832 A JP2005351832 A JP 2005351832A JP 4854286 B2 JP4854286 B2 JP 4854286B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- copper
- porous silica
- intermediate layer
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Description
結果を表1に示す。
(表1)
表1に示したように、真空中での加熱を経た膜と酸素雰囲気中での加熱を経た膜とを比較すると、比誘電率及び屈折率においてはどちらもあまり変わらなかったが、酸素雰囲気中での加熱を経て得られた膜は、真空中での加熱を経て得られた膜よりも硬さ及びヤング率が7倍大きかった。これにより、酸素雰囲気中で加熱することにより、膜が硬くなることがわかった。
Claims (2)
- 銅配線と、
疎水基を有するシリコン原子含有有機化合物と、前駆体としてのアルコキシドとを含む前駆体含有溶液を得て、この前駆体含有溶液を基板上に塗布したものを加熱処理し、加熱処理により形成された膜を疎水基を有するシリコン原子含有ガス雰囲気中で焼成することで得られた疎水性多孔質シリカからなる絶縁膜と、
前記銅配線と前記絶縁膜との間に形成され、前記銅配線と前記絶縁膜との密着性を向上させる、厚さが0.1nm〜1.0nmである中間層とを備え、
前記中間層が前記絶縁膜に接して設けられ、前記銅配線が前記中間層に接して設けられることを特徴とする銅配線構造。 - 前記中間層が、Ti、Cr、Mn、Fe、Co、Ni、Zr、Ru、Ta及びWから選ばれた少なくとも1種の金属またはこれらの金属の少なくとも1種を含む合金からなることを特徴とする請求項1に記載の銅配線構造。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005351832A JP4854286B2 (ja) | 2005-12-06 | 2005-12-06 | 銅配線構造 |
Applications Claiming Priority (1)
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---|---|---|---|
JP2005351832A JP4854286B2 (ja) | 2005-12-06 | 2005-12-06 | 銅配線構造 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007158066A JP2007158066A (ja) | 2007-06-21 |
JP4854286B2 true JP4854286B2 (ja) | 2012-01-18 |
Family
ID=38242025
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005351832A Expired - Fee Related JP4854286B2 (ja) | 2005-12-06 | 2005-12-06 | 銅配線構造 |
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JP (1) | JP4854286B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5864637B2 (ja) | 2013-03-19 | 2016-02-17 | 株式会社日立国際電気 | 半導体装置の製造方法、基板処理装置、プログラム及び記録媒体 |
CN105493248B (zh) | 2013-09-30 | 2018-04-10 | 株式会社日立国际电气 | 半导体器件的制造方法、衬底处理装置、衬底处理系统及记录介质 |
JP6470060B2 (ja) | 2015-01-30 | 2019-02-13 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置およびプログラム |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6559070B1 (en) * | 2000-04-11 | 2003-05-06 | Applied Materials, Inc. | Mesoporous silica films with mobile ion gettering and accelerated processing |
JP3505520B2 (ja) * | 2001-05-11 | 2004-03-08 | 松下電器産業株式会社 | 層間絶縁膜 |
JP2003188252A (ja) * | 2001-12-13 | 2003-07-04 | Toshiba Corp | 半導体装置及びその製造方法 |
JP2004033314A (ja) * | 2002-06-28 | 2004-02-05 | Sanyo Electric Co Ltd | ゴルフカート |
JP2004193499A (ja) * | 2002-12-13 | 2004-07-08 | Applied Materials Inc | 半導体装置、その製造方法、及びその製造装置 |
JP2004273786A (ja) * | 2003-03-10 | 2004-09-30 | Ulvac Japan Ltd | 疎水性多孔質sog膜の作製方法 |
JP3939711B2 (ja) * | 2003-06-18 | 2007-07-04 | 富士通株式会社 | 半導体装置の製造方法 |
JP2005142325A (ja) * | 2003-11-06 | 2005-06-02 | Semiconductor Leading Edge Technologies Inc | 半導体装置及びその製造方法 |
JP3666751B2 (ja) * | 2003-11-28 | 2005-06-29 | 東京エレクトロン株式会社 | 絶縁膜の形成方法及び絶縁膜形成システム |
-
2005
- 2005-12-06 JP JP2005351832A patent/JP4854286B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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JP2007158066A (ja) | 2007-06-21 |
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