JP4849788B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP4849788B2
JP4849788B2 JP2004262874A JP2004262874A JP4849788B2 JP 4849788 B2 JP4849788 B2 JP 4849788B2 JP 2004262874 A JP2004262874 A JP 2004262874A JP 2004262874 A JP2004262874 A JP 2004262874A JP 4849788 B2 JP4849788 B2 JP 4849788B2
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Japan
Prior art keywords
source
fingers
transistors
semiconductor device
gate
Prior art date
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Expired - Lifetime
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JP2004262874A
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English (en)
Japanese (ja)
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JP2006080308A5 (https=
JP2006080308A (ja
Inventor
慎也 水野
耕平 内藤
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Sumitomo Electric Device Innovations Inc
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Sumitomo Electric Device Innovations Inc
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Priority to JP2004262874A priority Critical patent/JP4849788B2/ja
Publication of JP2006080308A publication Critical patent/JP2006080308A/ja
Publication of JP2006080308A5 publication Critical patent/JP2006080308A5/ja
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Publication of JP4849788B2 publication Critical patent/JP4849788B2/ja
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Expired - Lifetime legal-status Critical Current

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2004262874A 2004-09-09 2004-09-09 半導体装置 Expired - Lifetime JP4849788B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004262874A JP4849788B2 (ja) 2004-09-09 2004-09-09 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004262874A JP4849788B2 (ja) 2004-09-09 2004-09-09 半導体装置

Publications (3)

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JP2006080308A JP2006080308A (ja) 2006-03-23
JP2006080308A5 JP2006080308A5 (https=) 2007-06-28
JP4849788B2 true JP4849788B2 (ja) 2012-01-11

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ID=36159518

Family Applications (1)

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JP2004262874A Expired - Lifetime JP4849788B2 (ja) 2004-09-09 2004-09-09 半導体装置

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JP (1) JP4849788B2 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5733616B2 (ja) * 2011-04-21 2015-06-10 住友電工デバイス・イノベーション株式会社 半導体装置
WO2020202600A1 (ja) * 2019-03-29 2020-10-08 株式会社 東芝 半導体装置、半導体装置の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0368144A (ja) * 1989-08-05 1991-03-25 Mitsubishi Electric Corp 電界効果トランジスタ及びその製造方法
JPH0677258A (ja) * 1992-08-26 1994-03-18 Nec Kansai Ltd 電界効果トランジスタ及びその製造方法
JP2629643B2 (ja) * 1995-03-31 1997-07-09 日本電気株式会社 電界効果トランジスタ
DE19522364C1 (de) * 1995-06-20 1996-07-04 Siemens Ag Halbleiter-Bauelement
JP3499103B2 (ja) * 1997-02-21 2004-02-23 三菱電機株式会社 半導体装置
JPH11312790A (ja) * 1998-04-28 1999-11-09 Mitsubishi Electric Corp 電界効果トランジスタ、半導体スイッチおよび半導体移相器
JP4122600B2 (ja) * 1998-11-12 2008-07-23 三菱電機株式会社 電解効果トランジスタおよび半導体回路

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Publication number Publication date
JP2006080308A (ja) 2006-03-23

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