JP4832835B2 - 不揮発性半導体記憶装置の読み書き制御方法 - Google Patents
不揮発性半導体記憶装置の読み書き制御方法 Download PDFInfo
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- JP4832835B2 JP4832835B2 JP2005265080A JP2005265080A JP4832835B2 JP 4832835 B2 JP4832835 B2 JP 4832835B2 JP 2005265080 A JP2005265080 A JP 2005265080A JP 2005265080 A JP2005265080 A JP 2005265080A JP 4832835 B2 JP4832835 B2 JP 4832835B2
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- 238000000034 method Methods 0.000 title claims description 20
- 239000004065 semiconductor Substances 0.000 title claims description 20
- 239000002784 hot electron Substances 0.000 claims description 14
- 238000003860 storage Methods 0.000 claims description 7
- 230000005641 tunneling Effects 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- 238000010586 diagram Methods 0.000 description 13
- LPQOADBMXVRBNX-UHFFFAOYSA-N ac1ldcw0 Chemical compound Cl.C1CN(C)CCN1C1=C(F)C=C2C(=O)C(C(O)=O)=CN3CCSC1=C32 LPQOADBMXVRBNX-UHFFFAOYSA-N 0.000 description 8
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000012795 verification Methods 0.000 description 5
- 230000003213 activating effect Effects 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 230000000644 propagated effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000009191 jumping Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005265080A JP4832835B2 (ja) | 2005-09-13 | 2005-09-13 | 不揮発性半導体記憶装置の読み書き制御方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005265080A JP4832835B2 (ja) | 2005-09-13 | 2005-09-13 | 不揮発性半導体記憶装置の読み書き制御方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011167479A Division JP5238859B2 (ja) | 2011-07-29 | 2011-07-29 | 不揮発性半導体記憶装置およびその読み書き制御方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007080338A JP2007080338A (ja) | 2007-03-29 |
| JP2007080338A5 JP2007080338A5 (https=) | 2008-10-23 |
| JP4832835B2 true JP4832835B2 (ja) | 2011-12-07 |
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ID=37940501
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005265080A Expired - Fee Related JP4832835B2 (ja) | 2005-09-13 | 2005-09-13 | 不揮発性半導体記憶装置の読み書き制御方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4832835B2 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5343916B2 (ja) | 2010-04-16 | 2013-11-13 | 富士通セミコンダクター株式会社 | 半導体メモリ |
| JP2013218758A (ja) * | 2012-04-06 | 2013-10-24 | Genusion:Kk | 不揮発性半導体記憶装置 |
| US10269822B2 (en) | 2015-12-29 | 2019-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method to fabricate uniform tunneling dielectric of embedded flash memory cell |
| CN107039452B (zh) * | 2015-12-29 | 2020-02-21 | 台湾积体电路制造股份有限公司 | 制造嵌入式闪存单元的均匀的隧道电介质的方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3878681B2 (ja) * | 1995-06-15 | 2007-02-07 | 株式会社ルネサステクノロジ | 不揮発性半導体記憶装置 |
| JP2888181B2 (ja) * | 1995-09-18 | 1999-05-10 | 日本電気株式会社 | 不揮発性半導体記憶装置 |
| US5687118A (en) * | 1995-11-14 | 1997-11-11 | Programmable Microelectronics Corporation | PMOS memory cell with hot electron injection programming and tunnelling erasing |
| JPH09246404A (ja) * | 1996-03-04 | 1997-09-19 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
| JP3962769B2 (ja) * | 2004-11-01 | 2007-08-22 | 株式会社Ｇｅｎｕｓｉｏｎ | 不揮発性半導体記憶装置およびその書込方法 |
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2005
- 2005-09-13 JP JP2005265080A patent/JP4832835B2/ja not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| JP2007080338A (ja) | 2007-03-29 |
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