JP4831853B2 - 容量結合型平行平板プラズマエッチング装置およびそれを用いたプラズマエッチング方法 - Google Patents

容量結合型平行平板プラズマエッチング装置およびそれを用いたプラズマエッチング方法 Download PDF

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JP4831853B2
JP4831853B2 JP12969699A JP12969699A JP4831853B2 JP 4831853 B2 JP4831853 B2 JP 4831853B2 JP 12969699 A JP12969699 A JP 12969699A JP 12969699 A JP12969699 A JP 12969699A JP 4831853 B2 JP4831853 B2 JP 4831853B2
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electrode
upper electrode
plasma etching
high frequency
plasma
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JP12969699A
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English (en)
Japanese (ja)
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JP2000323460A5 (enrdf_load_stackoverflow
JP2000323460A (ja
Inventor
圭三 広瀬
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP12969699A priority Critical patent/JP4831853B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to KR20017014080A priority patent/KR100880767B1/ko
Priority to EP00922892A priority patent/EP1193746B1/en
Priority to KR1020057007269A priority patent/KR100748798B1/ko
Priority to DE60043505T priority patent/DE60043505D1/de
Priority to US09/959,745 priority patent/US7537672B1/en
Priority to PCT/JP2000/002770 priority patent/WO2000068985A1/ja
Priority to TW089108548A priority patent/TW462092B/zh
Publication of JP2000323460A publication Critical patent/JP2000323460A/ja
Priority to US10/984,943 priority patent/US20050061445A1/en
Publication of JP2000323460A5 publication Critical patent/JP2000323460A5/ja
Priority to US12/195,842 priority patent/US8080126B2/en
Priority to US12/879,926 priority patent/US20100326601A1/en
Application granted granted Critical
Publication of JP4831853B2 publication Critical patent/JP4831853B2/ja
Priority to US13/728,634 priority patent/US20130112666A1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Plasma Technology (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP12969699A 1999-05-06 1999-05-11 容量結合型平行平板プラズマエッチング装置およびそれを用いたプラズマエッチング方法 Expired - Lifetime JP4831853B2 (ja)

Priority Applications (12)

Application Number Priority Date Filing Date Title
JP12969699A JP4831853B2 (ja) 1999-05-11 1999-05-11 容量結合型平行平板プラズマエッチング装置およびそれを用いたプラズマエッチング方法
PCT/JP2000/002770 WO2000068985A1 (fr) 1999-05-06 2000-04-27 Appareil de traitement au plasma
EP00922892A EP1193746B1 (en) 1999-05-06 2000-04-27 Apparatus for plasma processing
KR1020057007269A KR100748798B1 (ko) 1999-05-06 2000-04-27 플라즈마 에칭 장치
DE60043505T DE60043505D1 (de) 1999-05-06 2000-04-27 Apparat für die plasma-behandlung
US09/959,745 US7537672B1 (en) 1999-05-06 2000-04-27 Apparatus for plasma processing
KR20017014080A KR100880767B1 (ko) 1999-05-06 2000-04-27 플라즈마 처리 장치
TW089108548A TW462092B (en) 1999-05-06 2000-05-04 Plasma processing system
US10/984,943 US20050061445A1 (en) 1999-05-06 2004-11-10 Plasma processing apparatus
US12/195,842 US8080126B2 (en) 1999-05-06 2008-08-21 Plasma processing apparatus
US12/879,926 US20100326601A1 (en) 1999-05-06 2010-09-10 Plasma processing apparatus
US13/728,634 US20130112666A1 (en) 1999-05-06 2012-12-27 Plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12969699A JP4831853B2 (ja) 1999-05-11 1999-05-11 容量結合型平行平板プラズマエッチング装置およびそれを用いたプラズマエッチング方法

Publications (3)

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JP2000323460A JP2000323460A (ja) 2000-11-24
JP2000323460A5 JP2000323460A5 (enrdf_load_stackoverflow) 2006-06-22
JP4831853B2 true JP4831853B2 (ja) 2011-12-07

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JP12969699A Expired - Lifetime JP4831853B2 (ja) 1999-05-06 1999-05-11 容量結合型平行平板プラズマエッチング装置およびそれを用いたプラズマエッチング方法

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JP (1) JP4831853B2 (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10529539B2 (en) 2004-06-21 2020-01-07 Tokyo Electron Limited Plasma processing apparatus and method
US10546727B2 (en) 2004-06-21 2020-01-28 Tokyo Electron Limited Plasma processing apparatus and method
US20220122809A1 (en) * 2020-10-20 2022-04-21 Panasonic Intellectual Property Management Co., Ltd. Plasma processing apparatus

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US7476624B2 (en) * 2001-06-15 2009-01-13 Tokyo Electron Limited Dry-etching method
JP4753276B2 (ja) 2002-11-26 2011-08-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP4482308B2 (ja) * 2002-11-26 2010-06-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US7405521B2 (en) * 2003-08-22 2008-07-29 Lam Research Corporation Multiple frequency plasma processor method and apparatus
US7169256B2 (en) * 2004-05-28 2007-01-30 Lam Research Corporation Plasma processor with electrode responsive to multiple RF frequencies
KR101248709B1 (ko) 2004-06-21 2013-04-02 도쿄엘렉트론가부시키가이샤 플라즈마 처리 장치
JP5036143B2 (ja) * 2004-06-21 2012-09-26 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法、ならびにコンピュータ読み取り可能な記憶媒体
US7740737B2 (en) 2004-06-21 2010-06-22 Tokyo Electron Limited Plasma processing apparatus and method
JP4672455B2 (ja) * 2004-06-21 2011-04-20 東京エレクトロン株式会社 プラズマエッチング装置およびプラズマエッチング方法、ならびにコンピュータ読み取り可能な記憶媒体
JP4523352B2 (ja) * 2004-07-20 2010-08-11 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP4699127B2 (ja) * 2004-07-30 2011-06-08 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US20060037704A1 (en) 2004-07-30 2006-02-23 Tokyo Electron Limited Plasma Processing apparatus and method
US7993489B2 (en) 2005-03-31 2011-08-09 Tokyo Electron Limited Capacitive coupling plasma processing apparatus and method for using the same
JP4704087B2 (ja) * 2005-03-31 2011-06-15 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
US7692916B2 (en) 2005-03-31 2010-04-06 Tokyo Electron Limited Capacitive coupling plasma processing apparatus and method
JP4515950B2 (ja) * 2005-03-31 2010-08-04 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法およびコンピュータ記憶媒体
JP2007234770A (ja) * 2006-02-28 2007-09-13 Tokyo Electron Ltd プラズマエッチング方法およびコンピュータ読み取り可能な記憶媒体
JP4827567B2 (ja) * 2006-03-16 2011-11-30 東京エレクトロン株式会社 プラズマエッチング方法およびコンピュータ読み取り可能な記憶媒体
JP4754374B2 (ja) * 2006-03-16 2011-08-24 東京エレクトロン株式会社 プラズマエッチング方法およびコンピュータ読み取り可能な記憶媒体
US8157953B2 (en) 2006-03-29 2012-04-17 Tokyo Electron Limited Plasma processing apparatus
JP5192209B2 (ja) * 2006-10-06 2013-05-08 東京エレクトロン株式会社 プラズマエッチング装置、プラズマエッチング方法およびコンピュータ読取可能な記憶媒体
KR100819020B1 (ko) * 2006-11-27 2008-04-02 세메스 주식회사 플라즈마 처리 장치
US8222156B2 (en) * 2006-12-29 2012-07-17 Lam Research Corporation Method and apparatus for processing a substrate using plasma
US8262847B2 (en) 2006-12-29 2012-09-11 Lam Research Corporation Plasma-enhanced substrate processing method and apparatus
US8360003B2 (en) * 2009-07-13 2013-01-29 Applied Materials, Inc. Plasma reactor with uniform process rate distribution by improved RF ground return path
JP5312369B2 (ja) * 2010-02-22 2013-10-09 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
JP5702968B2 (ja) * 2010-08-11 2015-04-15 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ制御方法
JP5982129B2 (ja) * 2011-02-15 2016-08-31 東京エレクトロン株式会社 電極及びプラズマ処理装置
JP5367000B2 (ja) * 2011-03-24 2013-12-11 東京エレクトロン株式会社 プラズマ処理装置
KR20160028601A (ko) * 2014-09-03 2016-03-14 삼성전자주식회사 반도체 제조 장비 및 이를 이용하는 반도체 소자의 제조 방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3062393B2 (ja) * 1994-04-28 2000-07-10 東京エレクトロン株式会社 プラズマ処理装置
JP3559641B2 (ja) * 1996-03-01 2004-09-02 キヤノン株式会社 真空容器内の加熱方法及び加熱機構
JP3834958B2 (ja) * 1997-09-30 2006-10-18 株式会社日立製作所 プラズマ処理装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10529539B2 (en) 2004-06-21 2020-01-07 Tokyo Electron Limited Plasma processing apparatus and method
US10546727B2 (en) 2004-06-21 2020-01-28 Tokyo Electron Limited Plasma processing apparatus and method
US20220122809A1 (en) * 2020-10-20 2022-04-21 Panasonic Intellectual Property Management Co., Ltd. Plasma processing apparatus
US11881380B2 (en) * 2020-10-20 2024-01-23 Panasonic Intellectual Property Management Co., Ltd. Plasma processing apparatus

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