JP4825345B2 - スパッタリングターゲットとそれを用いたバリア層および電子デバイスの形成方法 - Google Patents

スパッタリングターゲットとそれを用いたバリア層および電子デバイスの形成方法 Download PDF

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Publication number
JP4825345B2
JP4825345B2 JP2000254477A JP2000254477A JP4825345B2 JP 4825345 B2 JP4825345 B2 JP 4825345B2 JP 2000254477 A JP2000254477 A JP 2000254477A JP 2000254477 A JP2000254477 A JP 2000254477A JP 4825345 B2 JP4825345 B2 JP 4825345B2
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JP
Japan
Prior art keywords
electronic device
target
sputtering
sputtering target
film
Prior art date
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Expired - Lifetime
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JP2000254477A
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English (en)
Japanese (ja)
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JP2002060934A (ja
JP2002060934A5 (ja
Inventor
光一 渡邊
幸伸 鈴木
泰郎 高阪
隆 石上
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Toshiba Corp
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Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2000254477A priority Critical patent/JP4825345B2/ja
Priority to TW090120651A priority patent/TW593707B/zh
Priority to KR10-2001-0050828A priority patent/KR100432284B1/ko
Publication of JP2002060934A publication Critical patent/JP2002060934A/ja
Publication of JP2002060934A5 publication Critical patent/JP2002060934A5/ja
Application granted granted Critical
Publication of JP4825345B2 publication Critical patent/JP4825345B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
    • C22C27/02—Alloys based on vanadium, niobium, or tantalum
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP2000254477A 2000-08-24 2000-08-24 スパッタリングターゲットとそれを用いたバリア層および電子デバイスの形成方法 Expired - Lifetime JP4825345B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2000254477A JP4825345B2 (ja) 2000-08-24 2000-08-24 スパッタリングターゲットとそれを用いたバリア層および電子デバイスの形成方法
TW090120651A TW593707B (en) 2000-08-24 2001-08-22 Sputtering target
KR10-2001-0050828A KR100432284B1 (ko) 2000-08-24 2001-08-23 스퍼터링 타겟

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000254477A JP4825345B2 (ja) 2000-08-24 2000-08-24 スパッタリングターゲットとそれを用いたバリア層および電子デバイスの形成方法

Publications (3)

Publication Number Publication Date
JP2002060934A JP2002060934A (ja) 2002-02-28
JP2002060934A5 JP2002060934A5 (ja) 2007-10-25
JP4825345B2 true JP4825345B2 (ja) 2011-11-30

Family

ID=18743418

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000254477A Expired - Lifetime JP4825345B2 (ja) 2000-08-24 2000-08-24 スパッタリングターゲットとそれを用いたバリア層および電子デバイスの形成方法

Country Status (3)

Country Link
JP (1) JP4825345B2 (zh)
KR (1) KR100432284B1 (zh)
TW (1) TW593707B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4675421B2 (ja) 2009-03-27 2011-04-20 Ｔｈｋ株式会社 シリンジ駆動ユニット
WO2010134417A1 (ja) 2009-05-22 2010-11-25 Jx日鉱日石金属株式会社 タンタルスパッタリングターゲット
WO2011018971A1 (ja) 2009-08-11 2011-02-17 Jx日鉱日石金属株式会社 タンタルスパッタリングターゲット
US20130098759A1 (en) 2010-08-09 2013-04-25 Jx Nippon Mining & Metals Corporation Tantalum Sputtering Target
SG186765A1 (en) 2010-08-09 2013-02-28 Jx Nippon Mining & Metals Corp Tantalum sputtering target
KR20170141280A (ko) 2013-10-01 2017-12-22 제이엑스금속주식회사 탄탈 스퍼터링 타깃
KR20160138208A (ko) 2014-03-31 2016-12-02 가부시끼가이샤 도시바 스퍼터링 타깃의 제조 방법 및 스퍼터링 타깃
US11725270B2 (en) 2020-01-30 2023-08-15 Taiwan Semiconductor Manufacturing Co., Ltd. PVD target design and semiconductor devices formed using the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0621346B2 (ja) * 1986-06-11 1994-03-23 日本鉱業株式会社 高純度金属タンタル製ターゲットの製造方法
US6348139B1 (en) * 1998-06-17 2002-02-19 Honeywell International Inc. Tantalum-comprising articles
KR100600908B1 (ko) * 1998-06-29 2006-07-13 가부시끼가이샤 도시바 스퍼터 타겟
JP2001020065A (ja) * 1999-07-07 2001-01-23 Hitachi Metals Ltd スパッタリング用ターゲット及びその製造方法ならびに高融点金属粉末材料

Also Published As

Publication number Publication date
JP2002060934A (ja) 2002-02-28
KR100432284B1 (ko) 2004-05-22
KR20020016534A (ko) 2002-03-04
TW593707B (en) 2004-06-21

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