KR100432284B1 - 스퍼터링 타겟 - Google Patents
스퍼터링 타겟 Download PDFInfo
- Publication number
- KR100432284B1 KR100432284B1 KR10-2001-0050828A KR20010050828A KR100432284B1 KR 100432284 B1 KR100432284 B1 KR 100432284B1 KR 20010050828 A KR20010050828 A KR 20010050828A KR 100432284 B1 KR100432284 B1 KR 100432284B1
- Authority
- KR
- South Korea
- Prior art keywords
- target
- sputtering
- sputtering target
- film
- wiring
- Prior art date
Links
- 238000005477 sputtering target Methods 0.000 title claims abstract description 40
- 229910052802 copper Inorganic materials 0.000 claims abstract description 49
- 229910052737 gold Inorganic materials 0.000 claims abstract description 45
- 229910052709 silver Inorganic materials 0.000 claims abstract description 45
- 230000004888 barrier function Effects 0.000 claims abstract description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 6
- 229910052742 iron Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052700 potassium Inorganic materials 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 229910052708 sodium Inorganic materials 0.000 claims description 5
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 description 24
- 238000000034 method Methods 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 9
- 238000010894 electron beam technology Methods 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 230000008018 melting Effects 0.000 description 7
- 238000002844 melting Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000001737 promoting effect Effects 0.000 description 3
- 238000005546 reactive sputtering Methods 0.000 description 3
- 239000003513 alkali Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001640 fractional crystallisation Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001687 destabilization Effects 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 1
- 238000000504 luminescence detection Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000007500 overflow downdraw method Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/02—Alloys based on vanadium, niobium, or tantalum
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000254477A JP4825345B2 (ja) | 2000-08-24 | 2000-08-24 | スパッタリングターゲットとそれを用いたバリア層および電子デバイスの形成方法 |
| JPJP-P-2000-00254477 | 2000-08-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20020016534A KR20020016534A (ko) | 2002-03-04 |
| KR100432284B1 true KR100432284B1 (ko) | 2004-05-22 |
Family
ID=18743418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2001-0050828A KR100432284B1 (ko) | 2000-08-24 | 2001-08-23 | 스퍼터링 타겟 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP4825345B2 (zh) |
| KR (1) | KR100432284B1 (zh) |
| TW (1) | TW593707B (zh) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4675421B2 (ja) | 2009-03-27 | 2011-04-20 | Ｔｈｋ株式会社 | シリンジ駆動ユニット |
| WO2010134417A1 (ja) | 2009-05-22 | 2010-11-25 | Jx日鉱日石金属株式会社 | タンタルスパッタリングターゲット |
| WO2011018971A1 (ja) | 2009-08-11 | 2011-02-17 | Jx日鉱日石金属株式会社 | タンタルスパッタリングターゲット |
| US20130098759A1 (en) | 2010-08-09 | 2013-04-25 | Jx Nippon Mining & Metals Corporation | Tantalum Sputtering Target |
| SG186765A1 (en) | 2010-08-09 | 2013-02-28 | Jx Nippon Mining & Metals Corp | Tantalum sputtering target |
| KR20170141280A (ko) | 2013-10-01 | 2017-12-22 | 제이엑스금속주식회사 | 탄탈 스퍼터링 타깃 |
| KR20160138208A (ko) | 2014-03-31 | 2016-12-02 | 가부시끼가이샤 도시바 | 스퍼터링 타깃의 제조 방법 및 스퍼터링 타깃 |
| US11725270B2 (en) | 2020-01-30 | 2023-08-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | PVD target design and semiconductor devices formed using the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1987007650A1 (en) * | 1986-06-11 | 1987-12-17 | Nippon Mining Company Limited | Target made of highly pure metallic tantalum and process for its production |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6348139B1 (en) * | 1998-06-17 | 2002-02-19 | Honeywell International Inc. | Tantalum-comprising articles |
| KR100600908B1 (ko) * | 1998-06-29 | 2006-07-13 | 가부시끼가이샤 도시바 | 스퍼터 타겟 |
| JP2001020065A (ja) * | 1999-07-07 | 2001-01-23 | Hitachi Metals Ltd | スパッタリング用ターゲット及びその製造方法ならびに高融点金属粉末材料 |
-
2000
- 2000-08-24 JP JP2000254477A patent/JP4825345B2/ja not_active Expired - Lifetime
-
2001
- 2001-08-22 TW TW090120651A patent/TW593707B/zh not_active IP Right Cessation
- 2001-08-23 KR KR10-2001-0050828A patent/KR100432284B1/ko active IP Right Grant
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1987007650A1 (en) * | 1986-06-11 | 1987-12-17 | Nippon Mining Company Limited | Target made of highly pure metallic tantalum and process for its production |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002060934A (ja) | 2002-02-28 |
| JP4825345B2 (ja) | 2011-11-30 |
| KR20020016534A (ko) | 2002-03-04 |
| TW593707B (en) | 2004-06-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4996639B2 (ja) | スパッタターゲット | |
| JP3755559B2 (ja) | スパッタリングターゲット | |
| US7909949B2 (en) | Sputtering target with few surface defects, and surface processing method thereof | |
| EP0735152B1 (en) | Molybdenum-tungsten material for wiring, molybdenum-tungsten target for wiring, process for producing the same, and molybdenum-tungsten wiring thin film | |
| KR100432284B1 (ko) | 스퍼터링 타겟 | |
| JP4714123B2 (ja) | スパッタリングターゲット用高純度Ｔａ材の製造方法 | |
| KR20010023931A (ko) | 스팟터링 타겟트 및 박막 형성장치 부품 | |
| JP4686008B2 (ja) | スパッタリングターゲットとそれを用いたＣｕ膜および電子デバイス | |
| KR100698744B1 (ko) | 하프늄 합금 타겟트 및 그 제조방법 | |
| JP4481975B2 (ja) | スパッタリングターゲットの製造方法 | |
| JP2002363736A (ja) | スパッタターゲット、バリア膜および電子部品 | |
| JP3898043B2 (ja) | スパッタリングターゲットとそれを用いた半導体デバイスおよびスパッタリング装置 | |
| JP2000323434A (ja) | スパッタターゲット、配線膜および電子部品 | |
| JP5439349B2 (ja) | Ｃｕ膜の製造方法 | |
| JP5053471B2 (ja) | 配線膜の製造方法と電子部品の製造方法 | |
| JP5731770B2 (ja) | スパッタリングターゲットの製造方法及びスパッタリングターゲット | |
| JP2001303240A (ja) | スパッタリングターゲット | |
| JP2000323433A (ja) | スパッタターゲット、配線膜および電子部品 | |
| JP2007113118A (ja) | 半導体デバイス用高純度Ｔａ材 | |
| JP2007073980A (ja) | 半導体デバイス用ＴａＮ膜とそれを用いた半導体デバイス | |
| JP2000038659A (ja) | スパッタターゲット、配線膜および電子部品 | |
| JPH06136523A (ja) | スパッタリングターゲット及びその製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20130419 Year of fee payment: 10 |
|
| FPAY | Annual fee payment |
Payment date: 20140421 Year of fee payment: 11 |
|
| FPAY | Annual fee payment |
Payment date: 20160408 Year of fee payment: 13 |
|
| FPAY | Annual fee payment |
Payment date: 20170420 Year of fee payment: 14 |
|
| FPAY | Annual fee payment |
Payment date: 20180417 Year of fee payment: 15 |
|
| FPAY | Annual fee payment |
Payment date: 20190417 Year of fee payment: 16 |