JP4814259B2 - プラズマ処理装置用ガス分配部材の製造方法および該部材のガス透過率の調整方法 - Google Patents

プラズマ処理装置用ガス分配部材の製造方法および該部材のガス透過率の調整方法 Download PDF

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JP4814259B2
JP4814259B2 JP2007555173A JP2007555173A JP4814259B2 JP 4814259 B2 JP4814259 B2 JP 4814259B2 JP 2007555173 A JP2007555173 A JP 2007555173A JP 2007555173 A JP2007555173 A JP 2007555173A JP 4814259 B2 JP4814259 B2 JP 4814259B2
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gas
zone
distribution member
gas flow
zones
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JP2008537628A5 (enExample
JP2008537628A (ja
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ロバート， ジェイ． シュテーガー，
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Lam Research Corp
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Lam Research Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49764—Method of mechanical manufacture with testing or indicating
    • Y10T29/49771—Quantitative measuring or gauging

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Laser Beam Processing (AREA)
JP2007555173A 2005-02-15 2006-02-08 プラズマ処理装置用ガス分配部材の製造方法および該部材のガス透過率の調整方法 Expired - Fee Related JP4814259B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/057,433 2005-02-15
US11/057,433 US7480974B2 (en) 2005-02-15 2005-02-15 Methods of making gas distribution members for plasma processing apparatuses
PCT/US2006/004284 WO2006088697A2 (en) 2005-02-15 2006-02-08 Methods of making gas distribution members for plasma processing apparatuses

Publications (3)

Publication Number Publication Date
JP2008537628A JP2008537628A (ja) 2008-09-18
JP2008537628A5 JP2008537628A5 (enExample) 2009-03-26
JP4814259B2 true JP4814259B2 (ja) 2011-11-16

Family

ID=36814467

Family Applications (1)

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JP2007555173A Expired - Fee Related JP4814259B2 (ja) 2005-02-15 2006-02-08 プラズマ処理装置用ガス分配部材の製造方法および該部材のガス透過率の調整方法

Country Status (6)

Country Link
US (2) US7480974B2 (enExample)
JP (1) JP4814259B2 (enExample)
KR (1) KR101323025B1 (enExample)
CN (1) CN101495268B (enExample)
TW (1) TWI378152B (enExample)
WO (1) WO2006088697A2 (enExample)

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US7480974B2 (en) * 2005-02-15 2009-01-27 Lam Research Corporation Methods of making gas distribution members for plasma processing apparatuses
US8702866B2 (en) 2006-12-18 2014-04-22 Lam Research Corporation Showerhead electrode assembly with gas flow modification for extended electrode life
JP4849247B2 (ja) * 2006-12-22 2012-01-11 三菱マテリアル株式会社 比抵抗値の面内バラツキの小さい複合シリコン電極およびその製造方法
US8216419B2 (en) * 2008-03-28 2012-07-10 Bridgelux, Inc. Drilled CVD shower head
RU2499081C2 (ru) * 2008-03-26 2013-11-20 ДжиТиЭйТи Корпорейшн Системы и способы распределения газа в реакторе для химического осаждения из паровой фазы
CN101980959A (zh) * 2008-03-26 2011-02-23 Gt太阳能公司 涂覆金的多晶硅反应器系统和方法
US20100071210A1 (en) * 2008-09-24 2010-03-25 Applied Materials, Inc. Methods for fabricating faceplate of semiconductor apparatus
KR101460555B1 (ko) * 2008-12-29 2014-11-14 주식회사 케이씨텍 샤워헤드 및 이를 구비하는 원자층 증착장치
JP5336968B2 (ja) * 2009-07-30 2013-11-06 東京エレクトロン株式会社 プラズマ処理装置用電極及びプラズマ処理装置
US9245717B2 (en) * 2011-05-31 2016-01-26 Lam Research Corporation Gas distribution system for ceramic showerhead of plasma etch reactor
US8883029B2 (en) 2013-02-13 2014-11-11 Lam Research Corporation Method of making a gas distribution member for a plasma processing chamber
US9275840B2 (en) 2014-01-25 2016-03-01 Yuri Glukhoy Method for providing uniform distribution of plasma density in a plasma treatment apparatus
US9484190B2 (en) 2014-01-25 2016-11-01 Yuri Glukhoy Showerhead-cooler system of a semiconductor-processing chamber for semiconductor wafers of large area
US9570289B2 (en) * 2015-03-06 2017-02-14 Lam Research Corporation Method and apparatus to minimize seam effect during TEOS oxide film deposition
JP6421294B1 (ja) * 2017-05-25 2018-11-14 株式会社三井Ｅ＆Ｓマシナリー シャワーヘッド加工工具およびシャワーヘッド加工工具の製造方法
JP7716425B2 (ja) * 2020-04-29 2025-07-31 ラム リサーチ コーポレーション 基板処理システムにおけるシャワーヘッドのグルーピングフィーチャ
JP7563846B2 (ja) * 2020-12-21 2024-10-08 東京エレクトロン株式会社 流量測定方法及び基板処理装置

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JPH0718441U (ja) * 1993-09-10 1995-03-31 日新電機株式会社 薄膜気相成長装置
JP2001185494A (ja) * 1999-12-27 2001-07-06 Toshiba Corp マグネトロンプラズマ処理装置及びプラズマ処理方法
JP2002064084A (ja) * 2000-08-17 2002-02-28 Sumitomo Metal Ind Ltd プラズマ処理用ガス導入装置およびプラズマ処理方法
JP2002155366A (ja) * 2000-11-15 2002-05-31 Tokyo Electron Ltd 枚葉式熱処理方法および枚葉式熱処理装置
WO2005019496A1 (en) * 2003-08-20 2005-03-03 Veeco Instruments Inc. Alkyl push flow for vertical flow rotating disk reactors

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Publication number Priority date Publication date Assignee Title
JPH0718441U (ja) * 1993-09-10 1995-03-31 日新電機株式会社 薄膜気相成長装置
JP2001185494A (ja) * 1999-12-27 2001-07-06 Toshiba Corp マグネトロンプラズマ処理装置及びプラズマ処理方法
JP2002064084A (ja) * 2000-08-17 2002-02-28 Sumitomo Metal Ind Ltd プラズマ処理用ガス導入装置およびプラズマ処理方法
JP2002155366A (ja) * 2000-11-15 2002-05-31 Tokyo Electron Ltd 枚葉式熱処理方法および枚葉式熱処理装置
WO2005019496A1 (en) * 2003-08-20 2005-03-03 Veeco Instruments Inc. Alkyl push flow for vertical flow rotating disk reactors

Also Published As

Publication number Publication date
CN101495268A (zh) 2009-07-29
US20090120583A1 (en) 2009-05-14
WO2006088697A2 (en) 2006-08-24
TW200639268A (en) 2006-11-16
WO2006088697A3 (en) 2009-04-16
KR101323025B1 (ko) 2013-11-04
US7480974B2 (en) 2009-01-27
US20060180275A1 (en) 2006-08-17
CN101495268B (zh) 2011-06-08
JP2008537628A (ja) 2008-09-18
TWI378152B (en) 2012-12-01
KR20070103508A (ko) 2007-10-23

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