JP4790407B2 - 余分な成形材料を基板から除去するためのプラズマ法 - Google Patents

余分な成形材料を基板から除去するためのプラズマ法 Download PDF

Info

Publication number
JP4790407B2
JP4790407B2 JP2005365728A JP2005365728A JP4790407B2 JP 4790407 B2 JP4790407 B2 JP 4790407B2 JP 2005365728 A JP2005365728 A JP 2005365728A JP 2005365728 A JP2005365728 A JP 2005365728A JP 4790407 B2 JP4790407 B2 JP 4790407B2
Authority
JP
Japan
Prior art keywords
containing gas
plasma
gas mixture
volume percent
gas species
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2005365728A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006179914A (ja
JP2006179914A5 (enExample
Inventor
ディー． ゲッティ ジェームズ
ツアオ ジアンガン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nordson Corp
Original Assignee
Nordson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nordson Corp filed Critical Nordson Corp
Publication of JP2006179914A publication Critical patent/JP2006179914A/ja
Publication of JP2006179914A5 publication Critical patent/JP2006179914A5/ja
Application granted granted Critical
Publication of JP4790407B2 publication Critical patent/JP4790407B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/14—Surface shaping of articles, e.g. embossing; Apparatus therefor by plasma treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H05K3/288—Removal of non-metallic coatings, e.g. for repairing

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Treating Waste Gases (AREA)
JP2005365728A 2004-12-22 2005-12-20 余分な成形材料を基板から除去するためのプラズマ法 Expired - Fee Related JP4790407B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/021,341 2004-12-22
US11/021,341 US7842223B2 (en) 2004-12-22 2004-12-22 Plasma process for removing excess molding material from a substrate

Publications (3)

Publication Number Publication Date
JP2006179914A JP2006179914A (ja) 2006-07-06
JP2006179914A5 JP2006179914A5 (enExample) 2009-02-19
JP4790407B2 true JP4790407B2 (ja) 2011-10-12

Family

ID=36594674

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005365728A Expired - Fee Related JP4790407B2 (ja) 2004-12-22 2005-12-20 余分な成形材料を基板から除去するためのプラズマ法

Country Status (5)

Country Link
US (1) US7842223B2 (enExample)
JP (1) JP4790407B2 (enExample)
CN (1) CN100565819C (enExample)
SG (1) SG123667A1 (enExample)
TW (1) TWI362976B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7635418B2 (en) * 2004-12-03 2009-12-22 Nordson Corporation Plasma processing apparatus and methods for removing extraneous material from selected areas on a substrate
WO2010008102A1 (en) * 2008-07-14 2010-01-21 Ips Ltd. Cleaning method of apparatus for depositing carbon containing film
US8236615B2 (en) 2009-11-25 2012-08-07 International Business Machines Corporation Passivation layer surface topography modifications for improved integrity in packaged assemblies
WO2018156975A1 (en) * 2017-02-23 2018-08-30 Tokyo Electron Limited Method of quasi-atomic layer etching of silicon nitride

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59220934A (ja) * 1983-05-31 1984-12-12 Toshiba Corp 樹脂封止型半導体装置の製造方法
WO1986007492A1 (en) 1985-06-11 1986-12-18 American Telephone & Telegraph Company Lead frame deflashing
US5208067A (en) * 1986-04-14 1993-05-04 International Business Machines Corporation Surface modification of organic materials to improve adhesion
WO1991008095A2 (en) * 1989-11-24 1991-06-13 Asm Fico Tooling B.V. Single-strip moulding apparatus
JPH06285868A (ja) * 1993-03-30 1994-10-11 Bridgestone Corp 加硫金型の清浄方法
US5961860A (en) * 1995-06-01 1999-10-05 National University Of Singapore Pulse laser induced removal of mold flash on integrated circuit packages
JP2836616B2 (ja) * 1997-03-05 1998-12-14 日本電気株式会社 導体配線パターンの形成方法
US6230719B1 (en) * 1998-02-27 2001-05-15 Micron Technology, Inc. Apparatus for removing contaminants on electronic devices
US6082375A (en) * 1998-05-21 2000-07-04 Micron Technology, Inc. Method of processing internal surfaces of a chemical vapor deposition reactor
SG84519A1 (en) * 1998-12-07 2001-11-20 Advanced Systems Automation Method and apparatus for removal of mold flash
JP3400770B2 (ja) * 1999-11-16 2003-04-28 松下電器産業株式会社 エッチング方法、半導体装置及びその製造方法
US6489178B2 (en) * 2000-01-26 2002-12-03 Texas Instruments Incorporated Method of fabricating a molded package for micromechanical devices
US6439869B1 (en) * 2000-08-16 2002-08-27 Micron Technology, Inc. Apparatus for molding semiconductor components
US6629880B1 (en) * 2000-12-14 2003-10-07 National Semiconductor Corporation Rotary mechanical buffing method for deflashing of molded integrated circuit packages
US6732913B2 (en) * 2001-04-26 2004-05-11 Advanpack Solutions Pte Ltd. Method for forming a wafer level chip scale package, and package formed thereby
US6815362B1 (en) * 2001-05-04 2004-11-09 Lam Research Corporation End point determination of process residues in wafer-less auto clean process using optical emission spectroscopy
US7028696B2 (en) * 2001-05-04 2006-04-18 Lam Research Corporation Plasma cleaning of deposition chamber residues using duo-step wafer-less auto clean method
US20030005943A1 (en) * 2001-05-04 2003-01-09 Lam Research Corporation High pressure wafer-less auto clean for etch applications
US20040235303A1 (en) * 2001-05-04 2004-11-25 Lam Research Corporation Endpoint determination of process residues in wafer-less auto clean process using optical emission spectroscopy
JP2003273499A (ja) * 2002-03-12 2003-09-26 Nippon Spindle Mfg Co Ltd プリント配線基板のプラズマ洗浄方法
SG109495A1 (en) * 2002-04-16 2005-03-30 Micron Technology Inc Semiconductor packages with leadfame grid arrays and components and methods for making the same
DE10237084A1 (de) * 2002-08-05 2004-02-19 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines elektrischen Leiterrahmens und Verfahren zum Herstellen eines oberflächenmontierbaren Halbleiterbauelements
JP4097069B2 (ja) * 2002-08-28 2008-06-04 Ｔｄｋ株式会社 プリント基板の製造方法
US6750082B2 (en) * 2002-09-13 2004-06-15 Advanpack Solutions Pte. Ltd. Method of assembling a package with an exposed die backside with and without a heatsink for flip-chip
CN1875454A (zh) * 2003-10-28 2006-12-06 诺信公司 等离子处理系统和等离子处理工艺
WO2006012297A1 (en) * 2004-06-29 2006-02-02 Unaxis Usa Inc. Method and apparatus for reducing aspect ratio dependent etching in time division multiplexed etch processes
US7635418B2 (en) * 2004-12-03 2009-12-22 Nordson Corporation Plasma processing apparatus and methods for removing extraneous material from selected areas on a substrate
US20060201910A1 (en) * 2004-12-22 2006-09-14 Nordson Corporation Methods for removing extraneous amounts of molding material from a substrate

Also Published As

Publication number Publication date
SG123667A1 (en) 2006-07-26
CN100565819C (zh) 2009-12-02
JP2006179914A (ja) 2006-07-06
TWI362976B (en) 2012-05-01
TW200702094A (en) 2007-01-16
US7842223B2 (en) 2010-11-30
US20060131790A1 (en) 2006-06-22
CN1825546A (zh) 2006-08-30

Similar Documents

Publication Publication Date Title
US8329590B2 (en) Plasma processing apparatus and methods for removing extraneous material from selected areas on a substrate
JPWO2003071591A1 (ja) 半導体ウェーハの分割方法
JP6066569B2 (ja) 半導体デバイスパッケージング用のパッシベーション層
JP3275043B2 (ja) エッチングの後処理方法
JP2012049560A (ja) レジスト膜除去方法
JP4790407B2 (ja) 余分な成形材料を基板から除去するためのプラズマ法
JPH0552054B2 (enExample)
JP4671900B2 (ja) 接合方法および接合装置
EP3624171B1 (en) Etching method
JP2008001101A (ja) 余分量の成形材料を基板から除去する方法
US6780342B1 (en) Method of etching and method of plasma treatment
CN107634006A (zh) 晶圆的返工方法
US20060201910A1 (en) Methods for removing extraneous amounts of molding material from a substrate
JP3671879B2 (ja) 電子部品製造方法および電子部品
JP2003035962A (ja) 基板処理方法およびそのシステム
Tang et al. Decapsulation of high pin count IC packages with palladium coated copper wire bonds using an atmospheric pressure plasma
US10615035B2 (en) Method of reducing lift-off related redeposit defects on semiconductor wafers
JP3427702B2 (ja) 電子部品のプラズマ処理装置
KR100249008B1 (ko) 반도체장치의 이물질 발생 방지방법
CN119852176A (zh) 等离子体处理方法以及等离子体处理装置
JP2001110895A (ja) 金属配線の形成方法
KR100761901B1 (ko) 다층 회로기판 제조방법 및 장치
JP3957536B2 (ja) エッチング方法
JPH04337633A (ja) 半導体装置の製造におけるエッチング方法
JP2020031111A (ja) 基板処理方法及び基板処理システム

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081217

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20081217

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090116

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20100519

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100526

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20100826

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20100831

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101125

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110207

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110422

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20110627

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20110720

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140729

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4790407

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees