CN100565819C - 用于从基片去除多余模制材料的等离子处理方法 - Google Patents

用于从基片去除多余模制材料的等离子处理方法 Download PDF

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Publication number
CN100565819C
CN100565819C CNB2005101362123A CN200510136212A CN100565819C CN 100565819 C CN100565819 C CN 100565819C CN B2005101362123 A CNB2005101362123 A CN B2005101362123A CN 200510136212 A CN200510136212 A CN 200510136212A CN 100565819 C CN100565819 C CN 100565819C
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CN
China
Prior art keywords
gas mixture
plasma
substrate
molding material
fluorine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CNB2005101362123A
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English (en)
Chinese (zh)
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CN1825546A (zh
Inventor
詹姆斯·D·格蒂
赵建钢
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Nordson Corp
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Nordson Corp
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Publication date
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Publication of CN1825546A publication Critical patent/CN1825546A/zh
Application granted granted Critical
Publication of CN100565819C publication Critical patent/CN100565819C/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/14—Surface shaping of articles, e.g. embossing; Apparatus therefor by plasma treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H05K3/288—Removal of non-metallic coatings, e.g. for repairing

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Treating Waste Gases (AREA)
CNB2005101362123A 2004-12-22 2005-12-22 用于从基片去除多余模制材料的等离子处理方法 Expired - Fee Related CN100565819C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/021,341 US7842223B2 (en) 2004-12-22 2004-12-22 Plasma process for removing excess molding material from a substrate
US11/021,341 2004-12-22

Publications (2)

Publication Number Publication Date
CN1825546A CN1825546A (zh) 2006-08-30
CN100565819C true CN100565819C (zh) 2009-12-02

Family

ID=36594674

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2005101362123A Expired - Fee Related CN100565819C (zh) 2004-12-22 2005-12-22 用于从基片去除多余模制材料的等离子处理方法

Country Status (5)

Country Link
US (1) US7842223B2 (enExample)
JP (1) JP4790407B2 (enExample)
CN (1) CN100565819C (enExample)
SG (1) SG123667A1 (enExample)
TW (1) TWI362976B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7635418B2 (en) * 2004-12-03 2009-12-22 Nordson Corporation Plasma processing apparatus and methods for removing extraneous material from selected areas on a substrate
US20110114114A1 (en) * 2008-07-14 2011-05-19 Ips Ltd. Cleaning method of apparatus for depositing carbon containing film
US8236615B2 (en) 2009-11-25 2012-08-07 International Business Machines Corporation Passivation layer surface topography modifications for improved integrity in packaged assemblies
KR102537097B1 (ko) * 2017-02-23 2023-05-25 도쿄엘렉트론가부시키가이샤 실리콘 질화물의 유사 원자층 에칭 방법

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JPH06285868A (ja) * 1993-03-30 1994-10-11 Bridgestone Corp 加硫金型の清浄方法
US5961860A (en) * 1995-06-01 1999-10-05 National University Of Singapore Pulse laser induced removal of mold flash on integrated circuit packages
JP2836616B2 (ja) * 1997-03-05 1998-12-14 日本電気株式会社 導体配線パターンの形成方法
US6230719B1 (en) * 1998-02-27 2001-05-15 Micron Technology, Inc. Apparatus for removing contaminants on electronic devices
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SG84519A1 (en) * 1998-12-07 2001-11-20 Advanced Systems Automation Method and apparatus for removal of mold flash
JP3400770B2 (ja) * 1999-11-16 2003-04-28 松下電器産業株式会社 エッチング方法、半導体装置及びその製造方法
US6489178B2 (en) * 2000-01-26 2002-12-03 Texas Instruments Incorporated Method of fabricating a molded package for micromechanical devices
US6439869B1 (en) * 2000-08-16 2002-08-27 Micron Technology, Inc. Apparatus for molding semiconductor components
US6629880B1 (en) * 2000-12-14 2003-10-07 National Semiconductor Corporation Rotary mechanical buffing method for deflashing of molded integrated circuit packages
US6732913B2 (en) * 2001-04-26 2004-05-11 Advanpack Solutions Pte Ltd. Method for forming a wafer level chip scale package, and package formed thereby
WO2002090615A1 (en) * 2001-05-04 2002-11-14 Lam Research Corporation Duo-step plasma cleaning of chamber residues
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JP2003273499A (ja) * 2002-03-12 2003-09-26 Nippon Spindle Mfg Co Ltd プリント配線基板のプラズマ洗浄方法
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US6750082B2 (en) * 2002-09-13 2004-06-15 Advanpack Solutions Pte. Ltd. Method of assembling a package with an exposed die backside with and without a heatsink for flip-chip
KR20060115734A (ko) * 2003-10-28 2006-11-09 노드슨 코포레이션 플라즈마 프로세싱 시스템 및 플라즈마 처리 방법
CN100517596C (zh) * 2004-06-29 2009-07-22 优利讯美国有限公司 减少时分复用蚀刻工艺中蚀刻纵横比相关度的方法和装置
US7635418B2 (en) * 2004-12-03 2009-12-22 Nordson Corporation Plasma processing apparatus and methods for removing extraneous material from selected areas on a substrate
US20060201910A1 (en) * 2004-12-22 2006-09-14 Nordson Corporation Methods for removing extraneous amounts of molding material from a substrate

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SiO2平面光波导工艺中的反应离子刻蚀研究. 周立兵，罗风光等.真空科学与技术学报，第24卷第6期. 2004 *

Also Published As

Publication number Publication date
TW200702094A (en) 2007-01-16
CN1825546A (zh) 2006-08-30
JP2006179914A (ja) 2006-07-06
SG123667A1 (en) 2006-07-26
JP4790407B2 (ja) 2011-10-12
TWI362976B (en) 2012-05-01
US7842223B2 (en) 2010-11-30
US20060131790A1 (en) 2006-06-22

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Granted publication date: 20091202

Termination date: 20191222