TWI362976B - Plasma process for removing excess molding material from a substrate - Google Patents

Plasma process for removing excess molding material from a substrate Download PDF

Info

Publication number
TWI362976B
TWI362976B TW094141017A TW94141017A TWI362976B TW I362976 B TWI362976 B TW I362976B TW 094141017 A TW094141017 A TW 094141017A TW 94141017 A TW94141017 A TW 94141017A TW I362976 B TWI362976 B TW I362976B
Authority
TW
Taiwan
Prior art keywords
containing gas
species
gas mixture
oxygen
volume
Prior art date
Application number
TW094141017A
Other languages
English (en)
Chinese (zh)
Other versions
TW200702094A (en
Inventor
James D Getty
Jiangang Zhao
Original Assignee
Nordson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nordson Corp filed Critical Nordson Corp
Publication of TW200702094A publication Critical patent/TW200702094A/zh
Application granted granted Critical
Publication of TWI362976B publication Critical patent/TWI362976B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/14—Surface shaping of articles, e.g. embossing; Apparatus therefor by plasma treatment
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H05K3/288—Removal of non-metallic coatings, e.g. for repairing

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Treating Waste Gases (AREA)
TW094141017A 2004-12-22 2005-11-22 Plasma process for removing excess molding material from a substrate TWI362976B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/021,341 US7842223B2 (en) 2004-12-22 2004-12-22 Plasma process for removing excess molding material from a substrate

Publications (2)

Publication Number Publication Date
TW200702094A TW200702094A (en) 2007-01-16
TWI362976B true TWI362976B (en) 2012-05-01

Family

ID=36594674

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094141017A TWI362976B (en) 2004-12-22 2005-11-22 Plasma process for removing excess molding material from a substrate

Country Status (5)

Country Link
US (1) US7842223B2 (enExample)
JP (1) JP4790407B2 (enExample)
CN (1) CN100565819C (enExample)
SG (1) SG123667A1 (enExample)
TW (1) TWI362976B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7635418B2 (en) * 2004-12-03 2009-12-22 Nordson Corporation Plasma processing apparatus and methods for removing extraneous material from selected areas on a substrate
US20110114114A1 (en) * 2008-07-14 2011-05-19 Ips Ltd. Cleaning method of apparatus for depositing carbon containing film
US8236615B2 (en) 2009-11-25 2012-08-07 International Business Machines Corporation Passivation layer surface topography modifications for improved integrity in packaged assemblies
US10431470B2 (en) * 2017-02-23 2019-10-01 Tokyo Electron Limited Method of quasi-atomic layer etching of silicon nitride

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59220934A (ja) * 1983-05-31 1984-12-12 Toshiba Corp 樹脂封止型半導体装置の製造方法
DE3673773D1 (de) 1985-06-11 1990-10-04 American Telephone & Telegraph Leiterrahmengratentfernung.
US5208067A (en) * 1986-04-14 1993-05-04 International Business Machines Corporation Surface modification of organic materials to improve adhesion
WO1991008095A2 (en) * 1989-11-24 1991-06-13 Asm Fico Tooling B.V. Single-strip moulding apparatus
JPH06285868A (ja) * 1993-03-30 1994-10-11 Bridgestone Corp 加硫金型の清浄方法
US5961860A (en) * 1995-06-01 1999-10-05 National University Of Singapore Pulse laser induced removal of mold flash on integrated circuit packages
JP2836616B2 (ja) * 1997-03-05 1998-12-14 日本電気株式会社 導体配線パターンの形成方法
US6230719B1 (en) * 1998-02-27 2001-05-15 Micron Technology, Inc. Apparatus for removing contaminants on electronic devices
US6082375A (en) * 1998-05-21 2000-07-04 Micron Technology, Inc. Method of processing internal surfaces of a chemical vapor deposition reactor
SG84519A1 (en) * 1998-12-07 2001-11-20 Advanced Systems Automation Method and apparatus for removal of mold flash
JP3400770B2 (ja) * 1999-11-16 2003-04-28 松下電器産業株式会社 エッチング方法、半導体装置及びその製造方法
US6489178B2 (en) * 2000-01-26 2002-12-03 Texas Instruments Incorporated Method of fabricating a molded package for micromechanical devices
US6439869B1 (en) * 2000-08-16 2002-08-27 Micron Technology, Inc. Apparatus for molding semiconductor components
US6629880B1 (en) * 2000-12-14 2003-10-07 National Semiconductor Corporation Rotary mechanical buffing method for deflashing of molded integrated circuit packages
US6732913B2 (en) * 2001-04-26 2004-05-11 Advanpack Solutions Pte Ltd. Method for forming a wafer level chip scale package, and package formed thereby
US20040235303A1 (en) * 2001-05-04 2004-11-25 Lam Research Corporation Endpoint determination of process residues in wafer-less auto clean process using optical emission spectroscopy
CN100410421C (zh) * 2001-05-04 2008-08-13 拉姆研究公司 处理室残留物的两步式等离子清洗
US6815362B1 (en) * 2001-05-04 2004-11-09 Lam Research Corporation End point determination of process residues in wafer-less auto clean process using optical emission spectroscopy
US20030005943A1 (en) * 2001-05-04 2003-01-09 Lam Research Corporation High pressure wafer-less auto clean for etch applications
JP2003273499A (ja) * 2002-03-12 2003-09-26 Nippon Spindle Mfg Co Ltd プリント配線基板のプラズマ洗浄方法
SG109495A1 (en) * 2002-04-16 2005-03-30 Micron Technology Inc Semiconductor packages with leadfame grid arrays and components and methods for making the same
DE10237084A1 (de) * 2002-08-05 2004-02-19 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines elektrischen Leiterrahmens und Verfahren zum Herstellen eines oberflächenmontierbaren Halbleiterbauelements
JP4097069B2 (ja) * 2002-08-28 2008-06-04 Ｔｄｋ株式会社 プリント基板の製造方法
US6750082B2 (en) * 2002-09-13 2004-06-15 Advanpack Solutions Pte. Ltd. Method of assembling a package with an exposed die backside with and without a heatsink for flip-chip
KR20060115734A (ko) * 2003-10-28 2006-11-09 노드슨 코포레이션 플라즈마 프로세싱 시스템 및 플라즈마 처리 방법
EP1761947B1 (en) * 2004-06-29 2015-02-25 Unaxis USA Inc. Method for reducing aspect ratio dependent etching in time division multiplexed etch processes
US7635418B2 (en) * 2004-12-03 2009-12-22 Nordson Corporation Plasma processing apparatus and methods for removing extraneous material from selected areas on a substrate
US20060201910A1 (en) * 2004-12-22 2006-09-14 Nordson Corporation Methods for removing extraneous amounts of molding material from a substrate

Also Published As

Publication number Publication date
US20060131790A1 (en) 2006-06-22
CN1825546A (zh) 2006-08-30
US7842223B2 (en) 2010-11-30
JP2006179914A (ja) 2006-07-06
SG123667A1 (en) 2006-07-26
CN100565819C (zh) 2009-12-02
JP4790407B2 (ja) 2011-10-12
TW200702094A (en) 2007-01-16

Similar Documents

Publication Publication Date Title
US11609491B2 (en) Reflective mask cleaning apparatus and reflective mask cleaning method
US8329590B2 (en) Plasma processing apparatus and methods for removing extraneous material from selected areas on a substrate
JP2012049560A (ja) レジスト膜除去方法
KR101912578B1 (ko) 반도체 디바이스 패키징을 위한 패시베이션 층
KR20010043708A (ko) 이중 주파수 플라즈마 에칭 챔버에서 금속 산화물의 환원
JP2020155603A (ja) 基板処理方法および基板処理装置
CN106449371A (zh) 等离子体清洗方法、封装方法、功率模块和空调器
US8912653B2 (en) Plasma treatment on semiconductor wafers
US20120168943A1 (en) Plasma treatment on semiconductor wafers
Wood et al. Plasma cleaning of chip scale packages for improvement of wire bond strength
CN100565819C (zh) 用于从基片去除多余模制材料的等离子处理方法
US7001641B2 (en) Seed layer treatment
US6780342B1 (en) Method of etching and method of plasma treatment
JP5874051B2 (ja) 半導体発光装置の製造方法およびプラズマを利用したクリーニング方法
CN109716506A (zh) 电子部件的制造方法
CN211529919U (zh) 一种晶圆级封装布线的薄膜处理设备
JP2008001101A (ja) 余分量の成形材料を基板から除去する方法
JP2003035962A (ja) 基板処理方法およびそのシステム
EP1508385B1 (en) System for ultraviolet cleaning
KR0175073B1 (ko) 실리콘 함유층의 에칭방법
JP2012204692A (ja) 半導体装置の製造方法
JP2010056263A (ja) イオン注入によりカーボン層が形成されたレジストの除去方法
JP3427702B2 (ja) 電子部品のプラズマ処理装置
JP4127370B2 (ja) プラズマ処理方法
JP6012998B2 (ja) プラズマ処理方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees