JP4790407B2 - 余分な成形材料を基板から除去するためのプラズマ法 - Google Patents
余分な成形材料を基板から除去するためのプラズマ法 Download PDFInfo
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- JP4790407B2 JP4790407B2 JP2005365728A JP2005365728A JP4790407B2 JP 4790407 B2 JP4790407 B2 JP 4790407B2 JP 2005365728 A JP2005365728 A JP 2005365728A JP 2005365728 A JP2005365728 A JP 2005365728A JP 4790407 B2 JP4790407 B2 JP 4790407B2
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- 238000000034 method Methods 0.000 title claims description 88
- 239000000758 substrate Substances 0.000 title claims description 44
- 239000012778 molding material Substances 0.000 title claims description 32
- 239000007789 gas Substances 0.000 claims description 105
- 230000008569 process Effects 0.000 claims description 53
- 239000000203 mixture Substances 0.000 claims description 46
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 31
- 229910052760 oxygen Inorganic materials 0.000 claims description 31
- 239000001301 oxygen Substances 0.000 claims description 31
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 28
- 229910052731 fluorine Inorganic materials 0.000 claims description 28
- 239000011737 fluorine Substances 0.000 claims description 28
- 239000011159 matrix material Substances 0.000 claims description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000004593 Epoxy Substances 0.000 claims description 4
- 229910018503 SF6 Inorganic materials 0.000 claims description 3
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 claims description 3
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 3
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 3
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 claims description 3
- 210000002381 plasma Anatomy 0.000 description 61
- 239000011256 inorganic filler Substances 0.000 description 15
- 229910003475 inorganic filler Inorganic materials 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 7
- 239000000126 substance Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000465 moulding Methods 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 4
- 239000000945 filler Substances 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 239000011856 silicon-based particle Substances 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/14—Surface shaping of articles, e.g. embossing; Apparatus therefor by plasma treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/288—Removal of non-metallic coatings, e.g. for repairing
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Treating Waste Gases (AREA)
Description
本発明のさらなる詳細および実施形態は、次の実施例において記述されるはずである。
Claims (10)
- 余分な成形材料の薄層を処理室内に配置された基板上の領域から除去するための方法であって、
前記成形材料が、有機マトリックスおよび該有機マトリックス中に分散した複数のシリカ粒子を含む2成分系成形材料であり、
前記方法が、
処理室内に基板を配置すること、
約800mTorrから約2500mTorrの範囲の作動圧力で前記処理室内に50体積パーセント未満のフッ素含有ガス種および酸素含有ガス種を含む第1ガス混合物を導入すること、
前記第1ガス混合物から前記処理室内にプラズマを形成すること、
前記第1ガス混合物から発生させたプラズマに前記基板を曝して前記有機マトリックスを前記領域から除去し、前記複数のシリカ粒子を残すこと、
前記処理室内から前記基板を除去せずかつ前記処理室内のプラズマを消すことなく、約800mTorrから約2500mTorrの範囲の作動圧力で前記第1ガス混合物から50体積パーセントを超える前記フッ素含有ガス種および前記酸素含有ガス種を含む第2ガス混合物へと変更すること、
前記第2ガス混合物から前記処理室内にプラズマを形成すること、および
前記第2ガス混合物から発生させたプラズマに前記基板を曝して前記複数のシリカ粒子を前記領域から除去すること、
を含む方法。 - フッ素含有ガス種が、四フッ化炭素、三フッ化窒素、および六フッ化硫黄からなる群から選択される請求項1に記載の方法。
- 酸素含有ガス種が酸素分子である請求項1に記載の方法。
- 有機マトリックスがエポキシである請求項1に記載の方法。
- 第1ガス混合物が約70体積パーセントから約90体積パーセントの前記酸素含有ガス種を含む請求項1に記載の方法。
- 第2ガス混合物が約70体積パーセントから約90体積パーセントの前記フッ素含有ガス種を含む請求項5に記載の方法。
- 第1ガス混合物が約80体積パーセントの前記酸素含有ガス種および約20体積パーセントの前記フッ素含有ガス種を含む請求項1に記載の方法。
- 第2ガス混合物が約80体積パーセントの前記フッ素含有ガス種および約20体積パーセントの前記酸素含有ガス種を含む請求項7に記載の方法。
- 第2ガス混合物が約70体積パーセントから約90体積パーセントの前記フッ素含有ガス種を含む請求項1に記載の方法。
- 第2ガス混合物が約80体積パーセントの前記フッ素含有ガス種および約20体積パーセントの前記酸素含有ガス種を含む請求項1に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/021,341 | 2004-12-22 | ||
US11/021,341 US7842223B2 (en) | 2004-12-22 | 2004-12-22 | Plasma process for removing excess molding material from a substrate |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006179914A JP2006179914A (ja) | 2006-07-06 |
JP2006179914A5 JP2006179914A5 (ja) | 2009-02-19 |
JP4790407B2 true JP4790407B2 (ja) | 2011-10-12 |
Family
ID=36594674
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005365728A Expired - Fee Related JP4790407B2 (ja) | 2004-12-22 | 2005-12-20 | 余分な成形材料を基板から除去するためのプラズマ法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7842223B2 (ja) |
JP (1) | JP4790407B2 (ja) |
CN (1) | CN100565819C (ja) |
SG (1) | SG123667A1 (ja) |
TW (1) | TWI362976B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7635418B2 (en) * | 2004-12-03 | 2009-12-22 | Nordson Corporation | Plasma processing apparatus and methods for removing extraneous material from selected areas on a substrate |
WO2010008102A1 (en) * | 2008-07-14 | 2010-01-21 | Ips Ltd. | Cleaning method of apparatus for depositing carbon containing film |
US8236615B2 (en) * | 2009-11-25 | 2012-08-07 | International Business Machines Corporation | Passivation layer surface topography modifications for improved integrity in packaged assemblies |
WO2018156975A1 (en) * | 2017-02-23 | 2018-08-30 | Tokyo Electron Limited | Method of quasi-atomic layer etching of silicon nitride |
Family Cites Families (28)
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JPS59220934A (ja) * | 1983-05-31 | 1984-12-12 | Toshiba Corp | 樹脂封止型半導体装置の製造方法 |
DE3673773D1 (de) | 1985-06-11 | 1990-10-04 | American Telephone & Telegraph | Leiterrahmengratentfernung. |
US5208067A (en) * | 1986-04-14 | 1993-05-04 | International Business Machines Corporation | Surface modification of organic materials to improve adhesion |
JPH05501526A (ja) | 1989-11-24 | 1993-03-25 | アーエスエム・フィーコ・トゥーリング・ベスローテン・フェンノートシャップ | 成形装置 |
JPH06285868A (ja) | 1993-03-30 | 1994-10-11 | Bridgestone Corp | 加硫金型の清浄方法 |
US5961860A (en) | 1995-06-01 | 1999-10-05 | National University Of Singapore | Pulse laser induced removal of mold flash on integrated circuit packages |
JP2836616B2 (ja) * | 1997-03-05 | 1998-12-14 | 日本電気株式会社 | 導体配線パターンの形成方法 |
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SG84519A1 (en) | 1998-12-07 | 2001-11-20 | Advanced Systems Automation | Method and apparatus for removal of mold flash |
JP3400770B2 (ja) * | 1999-11-16 | 2003-04-28 | 松下電器産業株式会社 | エッチング方法、半導体装置及びその製造方法 |
US6489178B2 (en) | 2000-01-26 | 2002-12-03 | Texas Instruments Incorporated | Method of fabricating a molded package for micromechanical devices |
US6439869B1 (en) | 2000-08-16 | 2002-08-27 | Micron Technology, Inc. | Apparatus for molding semiconductor components |
US6629880B1 (en) | 2000-12-14 | 2003-10-07 | National Semiconductor Corporation | Rotary mechanical buffing method for deflashing of molded integrated circuit packages |
US6732913B2 (en) | 2001-04-26 | 2004-05-11 | Advanpack Solutions Pte Ltd. | Method for forming a wafer level chip scale package, and package formed thereby |
US6815362B1 (en) * | 2001-05-04 | 2004-11-09 | Lam Research Corporation | End point determination of process residues in wafer-less auto clean process using optical emission spectroscopy |
US20040235303A1 (en) * | 2001-05-04 | 2004-11-25 | Lam Research Corporation | Endpoint determination of process residues in wafer-less auto clean process using optical emission spectroscopy |
CN100410421C (zh) * | 2001-05-04 | 2008-08-13 | 拉姆研究公司 | 处理室残留物的两步式等离子清洗 |
US20030005943A1 (en) * | 2001-05-04 | 2003-01-09 | Lam Research Corporation | High pressure wafer-less auto clean for etch applications |
JP2003273499A (ja) * | 2002-03-12 | 2003-09-26 | Nippon Spindle Mfg Co Ltd | プリント配線基板のプラズマ洗浄方法 |
SG109495A1 (en) | 2002-04-16 | 2005-03-30 | Micron Technology Inc | Semiconductor packages with leadfame grid arrays and components and methods for making the same |
DE10237084A1 (de) | 2002-08-05 | 2004-02-19 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines elektrischen Leiterrahmens und Verfahren zum Herstellen eines oberflächenmontierbaren Halbleiterbauelements |
JP4097069B2 (ja) * | 2002-08-28 | 2008-06-04 | Tdk株式会社 | プリント基板の製造方法 |
US6750082B2 (en) | 2002-09-13 | 2004-06-15 | Advanpack Solutions Pte. Ltd. | Method of assembling a package with an exposed die backside with and without a heatsink for flip-chip |
JP2007514275A (ja) * | 2003-10-28 | 2007-05-31 | ノードソン コーポレーション | プラズマ処理装置及びプラズマ処理方法 |
US7959819B2 (en) * | 2004-06-29 | 2011-06-14 | Shouliang Lai | Method and apparatus for reducing aspect ratio dependent etching in time division multiplexed etch processes |
US7635418B2 (en) * | 2004-12-03 | 2009-12-22 | Nordson Corporation | Plasma processing apparatus and methods for removing extraneous material from selected areas on a substrate |
US20060201910A1 (en) | 2004-12-22 | 2006-09-14 | Nordson Corporation | Methods for removing extraneous amounts of molding material from a substrate |
-
2004
- 2004-12-22 US US11/021,341 patent/US7842223B2/en not_active Expired - Fee Related
-
2005
- 2005-11-18 SG SG200507043A patent/SG123667A1/en unknown
- 2005-11-22 TW TW094141017A patent/TWI362976B/zh not_active IP Right Cessation
- 2005-12-20 JP JP2005365728A patent/JP4790407B2/ja not_active Expired - Fee Related
- 2005-12-22 CN CNB2005101362123A patent/CN100565819C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7842223B2 (en) | 2010-11-30 |
TW200702094A (en) | 2007-01-16 |
TWI362976B (en) | 2012-05-01 |
JP2006179914A (ja) | 2006-07-06 |
US20060131790A1 (en) | 2006-06-22 |
CN1825546A (zh) | 2006-08-30 |
CN100565819C (zh) | 2009-12-02 |
SG123667A1 (en) | 2006-07-26 |
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